KR102537310B1 - 개선된 rf 리턴을 갖는 기판 지지부 - Google Patents

개선된 rf 리턴을 갖는 기판 지지부 Download PDF

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KR102537310B1
KR102537310B1 KR1020177025702A KR20177025702A KR102537310B1 KR 102537310 B1 KR102537310 B1 KR 102537310B1 KR 1020177025702 A KR1020177025702 A KR 1020177025702A KR 20177025702 A KR20177025702 A KR 20177025702A KR 102537310 B1 KR102537310 B1 KR 102537310B1
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South Korea
Prior art keywords
substrate
support
conductive element
substrate support
disposed
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Korean (ko)
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KR20170117510A (ko
Inventor
아라빈드 미야르 카마스
쳉-싱 차이
잘레팔리 라비
토모하루 마쓰시타
유 창
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67103—
    • H01L21/67248—
    • H01L21/68792—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020177025702A 2015-02-13 2016-02-11 개선된 rf 리턴을 갖는 기판 지지부 Active KR102537310B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562116218P 2015-02-13 2015-02-13
US62/116,218 2015-02-13
US15/019,573 US10134615B2 (en) 2015-02-13 2016-02-09 Substrate support with improved RF return
US15/019,573 2016-02-09
PCT/US2016/017452 WO2016130744A1 (en) 2015-02-13 2016-02-11 Substrate support with improved rf return

Publications (2)

Publication Number Publication Date
KR20170117510A KR20170117510A (ko) 2017-10-23
KR102537310B1 true KR102537310B1 (ko) 2023-05-25

Family

ID=56615690

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177025702A Active KR102537310B1 (ko) 2015-02-13 2016-02-11 개선된 rf 리턴을 갖는 기판 지지부

Country Status (7)

Country Link
US (1) US10134615B2 (https=)
JP (1) JP6843752B2 (https=)
KR (1) KR102537310B1 (https=)
CN (1) CN107210180B (https=)
SG (1) SG11201706020QA (https=)
TW (1) TWI691014B (https=)
WO (1) WO2016130744A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
JP6762184B2 (ja) 2016-09-26 2020-09-30 株式会社Ｓｃｒｅｅｎホールディングス 回収配管洗浄方法および基板処理装置
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290213A (ja) * 2008-05-28 2009-12-10 Komico Co Ltd 基板支持装置及びこれを含む基板処理装置
US20110100552A1 (en) * 2009-08-31 2011-05-05 Rajinder Dhindsa Radio frequency (rf) ground return arrangements

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020022403A1 (en) * 1999-08-06 2002-02-21 Wing L. Cheng Connectors for an eletrostatic chuck
JP3718093B2 (ja) * 2000-01-20 2005-11-16 ローム株式会社 半導体製造装置
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
US20080179011A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with wide process window employing plural vhf sources
KR20100004857A (ko) * 2008-07-03 2010-01-13 주성엔지니어링(주) 건식 에칭 장치
US20100000684A1 (en) 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
JP2012234951A (ja) * 2011-04-28 2012-11-29 Mitsubishi Heavy Ind Ltd 真空処理装置およびその電極面間隔調整方法
US8618446B2 (en) * 2011-06-30 2013-12-31 Applied Materials, Inc. Substrate support with substrate heater and symmetric RF return
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9340866B2 (en) * 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9404176B2 (en) 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290213A (ja) * 2008-05-28 2009-12-10 Komico Co Ltd 基板支持装置及びこれを含む基板処理装置
US20110100552A1 (en) * 2009-08-31 2011-05-05 Rajinder Dhindsa Radio frequency (rf) ground return arrangements

Also Published As

Publication number Publication date
CN107210180A (zh) 2017-09-26
TWI691014B (zh) 2020-04-11
JP6843752B2 (ja) 2021-03-17
SG11201706020QA (en) 2017-09-28
TW201703182A (zh) 2017-01-16
US20160240426A1 (en) 2016-08-18
KR20170117510A (ko) 2017-10-23
US10134615B2 (en) 2018-11-20
CN107210180B (zh) 2019-12-13
WO2016130744A1 (en) 2016-08-18
JP2018508994A (ja) 2018-03-29

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