SG11201702300PA - Method and system for inspecting transparent wafers for electronics, optics or optoelectronics - Google Patents

Method and system for inspecting transparent wafers for electronics, optics or optoelectronics

Info

Publication number
SG11201702300PA
SG11201702300PA SG11201702300PA SG11201702300PA SG11201702300PA SG 11201702300P A SG11201702300P A SG 11201702300PA SG 11201702300P A SG11201702300P A SG 11201702300PA SG 11201702300P A SG11201702300P A SG 11201702300PA SG 11201702300P A SG11201702300P A SG 11201702300PA
Authority
SG
Singapore
Prior art keywords
optoelectronics
optics
electronics
transparent wafers
inspecting transparent
Prior art date
Application number
SG11201702300PA
Other languages
English (en)
Inventor
De Gevigney Mayeul Durand
Philippe Gastaldo
Original Assignee
Unity Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unity Semiconductor filed Critical Unity Semiconductor
Publication of SG11201702300PA publication Critical patent/SG11201702300PA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • G01B9/02034Interferometers characterised by particularly shaped beams or wavefronts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/30Testing of optical devices, constituted by fibre optics or optical waveguides
    • G01M11/33Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face
    • G01M11/331Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face by using interferometer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9503Wafer edge inspection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201702300PA 2014-09-29 2015-09-29 Method and system for inspecting transparent wafers for electronics, optics or optoelectronics SG11201702300PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1459170A FR3026484B1 (fr) 2014-09-29 2014-09-29 Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique
PCT/EP2015/072368 WO2016050738A1 (fr) 2014-09-29 2015-09-29 Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique

Publications (1)

Publication Number Publication Date
SG11201702300PA true SG11201702300PA (en) 2017-04-27

Family

ID=51866249

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201702300PA SG11201702300PA (en) 2014-09-29 2015-09-29 Method and system for inspecting transparent wafers for electronics, optics or optoelectronics

Country Status (8)

Country Link
US (1) US10260868B2 (enExample)
EP (1) EP3201610B1 (enExample)
JP (1) JP6530062B2 (enExample)
KR (1) KR20170066375A (enExample)
CN (1) CN106716112B (enExample)
FR (1) FR3026484B1 (enExample)
SG (1) SG11201702300PA (enExample)
WO (1) WO2016050738A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160343140A1 (en) * 2015-05-24 2016-11-24 Pointivo, Inc. Surveying and measurement methods and devices
FR3049710B1 (fr) * 2016-03-31 2020-06-19 Unity Semiconductor Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
FR3076618B1 (fr) * 2018-01-05 2023-11-24 Unity Semiconductor Procede et systeme d'inspection optique d'un substrat
CN109543720B (zh) * 2018-10-30 2023-10-27 东华大学 一种基于对抗生成网络的晶圆图缺陷模式识别方法
EP4202423B1 (en) * 2021-12-23 2025-09-24 Unity Semiconductor A method and system for discriminating defects present on a frontside from defects present on a backside of a transparent substrate
KR20230175045A (ko) 2022-06-22 2023-12-29 삼성전자주식회사 캔틸레버

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030830A (en) * 1976-01-05 1977-06-21 Atlantic Research Corporation Process and apparatus for sensing defects on a smooth surface
JP2711140B2 (ja) * 1989-06-08 1998-02-10 三菱電機株式会社 徴細粒子測定装置
JPH07123105B2 (ja) * 1989-12-27 1995-12-25 松下電器産業株式会社 位置合わせ装置
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
KR100795286B1 (ko) * 2000-03-24 2008-01-15 올림푸스 가부시키가이샤 결함검출장치
US7006235B2 (en) * 2000-09-20 2006-02-28 Kla-Tencor Technologies Corp. Methods and systems for determining overlay and flatness of a specimen
EP1336094A2 (en) 2000-11-13 2003-08-20 Koninklijke Philips Electronics N.V. Measurement of surface defects
US7106454B2 (en) * 2003-03-06 2006-09-12 Zygo Corporation Profiling complex surface structures using scanning interferometry
FR2927175B1 (fr) * 2008-02-05 2011-02-18 Altatech Semiconductor Dispositif d'inspection de plaquettes semi-conductrices
JP2012504752A (ja) * 2008-10-01 2012-02-23 ピーター ヴォルターズ ゲーエムベーハー 円盤状加工物の厚さを測定する方法

Also Published As

Publication number Publication date
EP3201610B1 (fr) 2018-11-07
JP6530062B2 (ja) 2019-06-12
KR20170066375A (ko) 2017-06-14
JP2017538102A (ja) 2017-12-21
CN106716112A (zh) 2017-05-24
EP3201610A1 (fr) 2017-08-09
US20180231370A1 (en) 2018-08-16
CN106716112B (zh) 2019-08-06
FR3026484A1 (fr) 2016-04-01
FR3026484B1 (fr) 2018-06-15
US10260868B2 (en) 2019-04-16
WO2016050738A1 (fr) 2016-04-07

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