CN106716112B - 用于检验用于电学、光学或光电学的透明晶片的方法和系统 - Google Patents

用于检验用于电学、光学或光电学的透明晶片的方法和系统 Download PDF

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Publication number
CN106716112B
CN106716112B CN201580052315.3A CN201580052315A CN106716112B CN 106716112 B CN106716112 B CN 106716112B CN 201580052315 A CN201580052315 A CN 201580052315A CN 106716112 B CN106716112 B CN 106716112B
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China
Prior art keywords
chip
light
measurement space
defect
wafer
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CN201580052315.3A
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English (en)
Chinese (zh)
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CN106716112A (zh
Inventor
马约·杜朗德热维涅
菲利普·加斯塔尔多
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Unity Semiconductor Corp
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Unity Semiconductor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02034—Interferometers characterised by particularly shaped beams or wavefronts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/30—Testing of optical devices, constituted by fibre optics or optical waveguides
    • G01M11/33—Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face
    • G01M11/331—Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face by using interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201580052315.3A 2014-09-29 2015-09-29 用于检验用于电学、光学或光电学的透明晶片的方法和系统 Active CN106716112B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1459170A FR3026484B1 (fr) 2014-09-29 2014-09-29 Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique
FR1459170 2014-09-29
PCT/EP2015/072368 WO2016050738A1 (fr) 2014-09-29 2015-09-29 Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique

Publications (2)

Publication Number Publication Date
CN106716112A CN106716112A (zh) 2017-05-24
CN106716112B true CN106716112B (zh) 2019-08-06

Family

ID=51866249

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CN201580052315.3A Active CN106716112B (zh) 2014-09-29 2015-09-29 用于检验用于电学、光学或光电学的透明晶片的方法和系统

Country Status (8)

Country Link
US (1) US10260868B2 (enExample)
EP (1) EP3201610B1 (enExample)
JP (1) JP6530062B2 (enExample)
KR (1) KR20170066375A (enExample)
CN (1) CN106716112B (enExample)
FR (1) FR3026484B1 (enExample)
SG (1) SG11201702300PA (enExample)
WO (1) WO2016050738A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160343140A1 (en) * 2015-05-24 2016-11-24 Pointivo, Inc. Surveying and measurement methods and devices
FR3049710B1 (fr) * 2016-03-31 2020-06-19 Unity Semiconductor Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
FR3076618B1 (fr) * 2018-01-05 2023-11-24 Unity Semiconductor Procede et systeme d'inspection optique d'un substrat
CN109543720B (zh) * 2018-10-30 2023-10-27 东华大学 一种基于对抗生成网络的晶圆图缺陷模式识别方法
EP4202423B1 (en) * 2021-12-23 2025-09-24 Unity Semiconductor A method and system for discriminating defects present on a frontside from defects present on a backside of a transparent substrate
KR20230175045A (ko) 2022-06-22 2023-12-29 삼성전자주식회사 캔틸레버

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030830A (en) * 1976-01-05 1977-06-21 Atlantic Research Corporation Process and apparatus for sensing defects on a smooth surface
CN1314991A (zh) * 1998-08-27 2001-09-26 特维特过程控制技术有限公司 测量薄膜,特别是半导体衬底上的感光树脂薄膜的厚度的方法与装置
WO2002039099A2 (en) * 2000-11-13 2002-05-16 Koninklijke Philips Electronics N.V. Measurement of surface defects
CN1365445A (zh) * 2000-03-24 2002-08-21 奥林巴斯光学工业株式会社 缺陷检测装置
US20090195786A1 (en) * 2008-02-05 2009-08-06 Philippe Gastaldo Device for inspecting semi-conductor wafers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2711140B2 (ja) * 1989-06-08 1998-02-10 三菱電機株式会社 徴細粒子測定装置
JPH07123105B2 (ja) * 1989-12-27 1995-12-25 松下電器産業株式会社 位置合わせ装置
AU2001295060A1 (en) * 2000-09-20 2002-04-02 Kla-Tencor-Inc. Methods and systems for semiconductor fabrication processes
US7106454B2 (en) * 2003-03-06 2006-09-12 Zygo Corporation Profiling complex surface structures using scanning interferometry
CN102171000A (zh) * 2008-10-01 2011-08-31 彼特沃尔特斯有限公司 用于测量片状工件的厚度的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030830A (en) * 1976-01-05 1977-06-21 Atlantic Research Corporation Process and apparatus for sensing defects on a smooth surface
CN1314991A (zh) * 1998-08-27 2001-09-26 特维特过程控制技术有限公司 测量薄膜,特别是半导体衬底上的感光树脂薄膜的厚度的方法与装置
CN1365445A (zh) * 2000-03-24 2002-08-21 奥林巴斯光学工业株式会社 缺陷检测装置
WO2002039099A2 (en) * 2000-11-13 2002-05-16 Koninklijke Philips Electronics N.V. Measurement of surface defects
US20090195786A1 (en) * 2008-02-05 2009-08-06 Philippe Gastaldo Device for inspecting semi-conductor wafers

Also Published As

Publication number Publication date
JP2017538102A (ja) 2017-12-21
FR3026484B1 (fr) 2018-06-15
US10260868B2 (en) 2019-04-16
EP3201610A1 (fr) 2017-08-09
CN106716112A (zh) 2017-05-24
JP6530062B2 (ja) 2019-06-12
US20180231370A1 (en) 2018-08-16
KR20170066375A (ko) 2017-06-14
EP3201610B1 (fr) 2018-11-07
FR3026484A1 (fr) 2016-04-01
SG11201702300PA (en) 2017-04-27
WO2016050738A1 (fr) 2016-04-07

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