SG11201701941XA - Polishing-amount simulation method for buffing, and buffing apparatus - Google Patents

Polishing-amount simulation method for buffing, and buffing apparatus

Info

Publication number
SG11201701941XA
SG11201701941XA SG11201701941XA SG11201701941XA SG11201701941XA SG 11201701941X A SG11201701941X A SG 11201701941XA SG 11201701941X A SG11201701941X A SG 11201701941XA SG 11201701941X A SG11201701941X A SG 11201701941XA SG 11201701941X A SG11201701941X A SG 11201701941XA
Authority
SG
Singapore
Prior art keywords
buffing
polishing
simulation method
amount simulation
amount
Prior art date
Application number
SG11201701941XA
Other languages
English (en)
Inventor
Kuniaki Yamaguchi
Itsuki Kobata
Toshio Mizuno
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of SG11201701941XA publication Critical patent/SG11201701941XA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
SG11201701941XA 2015-01-19 2016-01-18 Polishing-amount simulation method for buffing, and buffing apparatus SG11201701941XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015007699 2015-01-19
PCT/JP2016/051206 WO2016117485A1 (ja) 2015-01-19 2016-01-18 バフ研磨処理における研磨量のシミュレーション方法およびバフ研磨装置

Publications (1)

Publication Number Publication Date
SG11201701941XA true SG11201701941XA (en) 2017-04-27

Family

ID=56417031

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701941XA SG11201701941XA (en) 2015-01-19 2016-01-18 Polishing-amount simulation method for buffing, and buffing apparatus

Country Status (7)

Country Link
US (2) US10792782B2 (ja)
JP (1) JP6643258B2 (ja)
KR (1) KR102218204B1 (ja)
CN (1) CN107107309B (ja)
SG (1) SG11201701941XA (ja)
TW (1) TWI680833B (ja)
WO (1) WO2016117485A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6822432B2 (ja) * 2018-02-23 2021-01-27 株式会社Sumco ウェーハの片面研磨方法
JP7086835B2 (ja) * 2018-12-28 2022-06-20 株式会社荏原製作所 研磨レシピ決定装置
KR102708233B1 (ko) * 2019-02-15 2024-09-23 주식회사 케이씨텍 기판 연마 시스템
JP7291056B2 (ja) * 2019-09-30 2023-06-14 株式会社ディスコ ウェーハの研磨方法
CN111468989B (zh) * 2020-03-30 2021-08-24 黄河水利职业技术学院 一种五轴联动数控机械手抛光控制系统及方法
CN111941155A (zh) * 2020-08-13 2020-11-17 蚌埠中光电科技有限公司 一种消除玻璃面研磨痕迹的研磨垫处理方法
KR102352972B1 (ko) * 2021-01-13 2022-01-18 성균관대학교산학협력단 폴리싱 패드 컨디셔닝 시뮬레이션 방법 및 장치
WO2022187105A1 (en) 2021-03-05 2022-09-09 Applied Materials, Inc. Control of processing parameters for substrate polishing with substrate precession
US20220379431A1 (en) * 2021-06-01 2022-12-01 Applied Materials, Inc. Methods of modeling and controlling pad wear
US20240189958A1 (en) * 2022-12-07 2024-06-13 Illinois Tool Works Inc. Systems and methods to detect rotation of a vibratory polisher

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US5599423A (en) * 1995-06-30 1997-02-04 Applied Materials, Inc. Apparatus and method for simulating and optimizing a chemical mechanical polishing system
JP2000005988A (ja) * 1998-04-24 2000-01-11 Ebara Corp 研磨装置
KR20010066764A (ko) * 1999-12-22 2001-07-11 오노 시게오 기판의 화학기계 연마장치
US20020013122A1 (en) 1999-12-22 2002-01-31 Nikon Corporation Process and apparatus for chemimechanically polishing a substrate
JP2001244222A (ja) * 1999-12-22 2001-09-07 Nikon Corp 基板の化学機械研磨装置、半導体デバイス製造方法、および半導体デバイス
JP2001269861A (ja) * 2000-03-23 2001-10-02 Sony Corp 研磨方法、研磨装置、研磨加工における加工量算出方法および加工量算出装置
JP2002100593A (ja) * 2000-09-21 2002-04-05 Nikon Corp 研磨装置、これを用いた半導体デバイスの製造方法及びこの製造方法により製造された半導体デバイス
JP5002875B2 (ja) 2001-01-31 2012-08-15 株式会社ニコン 加工形状の予測方法、加工条件の決定方法、加工方法、加工システム、半導体デバイスの製造方法、計算機プログラム、及び計算機プログラム記憶媒体
JP4358763B2 (ja) 2005-02-23 2009-11-04 憲一 石川 小径工具による加工物の表面形状加工方法
US7386041B2 (en) 2005-02-24 2008-06-10 Agilent Technologies, Inc. Method for normalization of an eye diagram and selection of sampling parameters for a receiver
JP4538805B2 (ja) * 2005-06-17 2010-09-08 株式会社ニコン 研磨装置、これを用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス
JP4808453B2 (ja) * 2005-08-26 2011-11-02 株式会社荏原製作所 研磨方法及び研磨装置
JP5415735B2 (ja) 2008-09-26 2014-02-12 株式会社荏原製作所 ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置
JP5674084B2 (ja) 2009-10-15 2015-02-25 株式会社ニコン 研磨装置及び研磨方法
CN104021247B (zh) * 2014-05-30 2017-03-01 中国科学院微电子研究所 Cmp仿真模型中研磨垫与芯片表面接触压力的计算方法
CN104149028B (zh) * 2014-08-12 2017-02-15 埃夫特智能装备股份有限公司 一种高精度机器人打磨系统及其控制方法
CN104191369B (zh) * 2014-08-28 2016-09-21 广东工业大学 一种集群磁流变抛光垫性能测试装置及其方法

Also Published As

Publication number Publication date
TWI680833B (zh) 2020-01-01
JP6643258B2 (ja) 2020-02-12
US20210023672A1 (en) 2021-01-28
CN107107309B (zh) 2020-09-18
US20170216991A1 (en) 2017-08-03
CN107107309A (zh) 2017-08-29
WO2016117485A1 (ja) 2016-07-28
US10792782B2 (en) 2020-10-06
JPWO2016117485A1 (ja) 2017-10-26
KR20170109228A (ko) 2017-09-28
KR102218204B1 (ko) 2021-02-23
TW201632311A (zh) 2016-09-16

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