SG11201609296XA - Polishing pad and method for manufacturing the same - Google Patents

Polishing pad and method for manufacturing the same

Info

Publication number
SG11201609296XA
SG11201609296XA SG11201609296XA SG11201609296XA SG11201609296XA SG 11201609296X A SG11201609296X A SG 11201609296XA SG 11201609296X A SG11201609296X A SG 11201609296XA SG 11201609296X A SG11201609296X A SG 11201609296XA SG 11201609296X A SG11201609296X A SG 11201609296XA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
polishing pad
polishing
pad
Prior art date
Application number
SG11201609296XA
Other languages
English (en)
Inventor
Michito Sato
Junichi Ueno
Kaoru Ishii
Yoshihide Kawamura
Hiroshi Yoshida
Masataka Takagi
Original Assignee
Fujibo Holdings Inc
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujibo Holdings Inc, Shinetsu Handotai Kk filed Critical Fujibo Holdings Inc
Publication of SG11201609296XA publication Critical patent/SG11201609296XA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG11201609296XA 2014-05-21 2015-05-14 Polishing pad and method for manufacturing the same SG11201609296XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014105711 2014-05-21
PCT/JP2015/063949 WO2015178289A1 (ja) 2014-05-21 2015-05-14 研磨パッド及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201609296XA true SG11201609296XA (en) 2016-12-29

Family

ID=54553962

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201609296XA SG11201609296XA (en) 2014-05-21 2015-05-14 Polishing pad and method for manufacturing the same

Country Status (8)

Country Link
US (1) US10201886B2 (zh)
JP (1) JP6225252B2 (zh)
KR (1) KR102394677B1 (zh)
CN (1) CN106457508B (zh)
DE (1) DE112015002356T5 (zh)
SG (1) SG11201609296XA (zh)
TW (1) TWI597126B (zh)
WO (1) WO2015178289A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6700855B2 (ja) * 2016-02-26 2020-05-27 株式会社フジミインコーポレーテッド 研磨方法
EP3421174B1 (en) 2016-02-26 2023-08-09 Fujimi Incorporated Polishing method
JP6693768B2 (ja) * 2016-02-26 2020-05-13 株式会社フジミインコーポレーテッド 研磨方法
JP6859056B2 (ja) * 2016-09-27 2021-04-14 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP6806515B2 (ja) * 2016-09-29 2021-01-06 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
TWI621501B (zh) * 2017-01-06 2018-04-21 三芳化學工業股份有限公司 研磨墊及研磨裝置
JP7174517B2 (ja) * 2017-11-01 2022-11-17 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法
KR20200028097A (ko) * 2018-09-06 2020-03-16 에스케이실트론 주식회사 웨이퍼 연마 장치용 연마패드
WO2020066671A1 (ja) * 2018-09-28 2020-04-02 株式会社フジミインコーポレーテッド 研磨パッド、及びそれを用いた研磨方法
TWI738323B (zh) * 2019-05-07 2021-09-01 美商Ｃｍｃ材料股份有限公司 化學機械拋光墊及化學機械拋光晶圓之方法
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
US20210323115A1 (en) * 2020-04-18 2021-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Leveraged poromeric polishing pad
US20210323116A1 (en) * 2020-04-18 2021-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Offset pore poromeric polishing pad

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
DE60110226T2 (de) * 2000-06-30 2006-03-09 Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington Unterlage für polierscheibe
US6666751B1 (en) * 2000-07-17 2003-12-23 Micron Technology, Inc. Deformable pad for chemical mechanical polishing
JP3788729B2 (ja) * 2000-08-23 2006-06-21 東洋ゴム工業株式会社 研磨パッド
US6612917B2 (en) * 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
JP2004189846A (ja) * 2002-12-10 2004-07-08 Sekisui Chem Co Ltd 研磨材固定用両面粘着テープ
US7175915B2 (en) * 2004-04-13 2007-02-13 Universal Photonics Method of producing polyurethane pads produced therewith
JP5288715B2 (ja) * 2007-03-14 2013-09-11 東洋ゴム工業株式会社 研磨パッド
JP5739111B2 (ja) * 2010-04-19 2015-06-24 帝人コードレ株式会社 研磨パッド
JP5678362B2 (ja) * 2010-07-12 2015-03-04 ニッタ・ハース株式会社 発泡体およびその製造方法
JP2012101339A (ja) * 2010-11-12 2012-05-31 Toray Coatex Co Ltd 研磨パッド
JP2012223875A (ja) * 2011-04-22 2012-11-15 Toray Coatex Co Ltd 研磨パッド
JP5844189B2 (ja) * 2012-03-26 2016-01-13 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法
JP2014188647A (ja) * 2013-03-28 2014-10-06 Toray Ind Inc 研磨パッド

Also Published As

Publication number Publication date
US10201886B2 (en) 2019-02-12
CN106457508A (zh) 2017-02-22
JP6225252B2 (ja) 2017-11-01
TW201611949A (en) 2016-04-01
US20170144266A1 (en) 2017-05-25
CN106457508B (zh) 2019-05-31
DE112015002356T5 (de) 2017-02-16
TWI597126B (zh) 2017-09-01
KR20170005011A (ko) 2017-01-11
KR102394677B1 (ko) 2022-05-09
WO2015178289A1 (ja) 2015-11-26
JPWO2015178289A1 (ja) 2017-04-20

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