SG11201608771WA - Method and device for plasma treatment of substrates - Google Patents
Method and device for plasma treatment of substratesInfo
- Publication number
- SG11201608771WA SG11201608771WA SG11201608771WA SG11201608771WA SG11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA
- Authority
- SG
- Singapore
- Prior art keywords
- substrates
- plasma treatment
- plasma
- treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000009832 plasma treatment Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/059524 WO2015169385A1 (de) | 2014-05-09 | 2014-05-09 | Verfahren und vorrichtung zur plasmabehandlung von substraten |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201608771WA true SG11201608771WA (en) | 2016-11-29 |
Family
ID=50693671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201608771WA SG11201608771WA (en) | 2014-05-09 | 2014-05-09 | Method and device for plasma treatment of substrates |
Country Status (8)
Country | Link |
---|---|
US (1) | US10707059B2 (zh) |
EP (1) | EP3140850B1 (zh) |
JP (1) | JP6470313B2 (zh) |
KR (1) | KR102161873B1 (zh) |
CN (1) | CN107078013B (zh) |
SG (1) | SG11201608771WA (zh) |
TW (1) | TWI677006B (zh) |
WO (1) | WO2015169385A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102024568B1 (ko) * | 2018-02-13 | 2019-09-24 | 한국기초과학지원연구원 | 환형 면방전 플라즈마 장치를 이용한 점상 식각 모듈 및 점상 식각 모듈의 식각 프로파일을 제어하는 방법 |
JP6966402B2 (ja) | 2018-09-11 | 2021-11-17 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法および基板処理装置の電極 |
DE102020209801A1 (de) | 2020-08-04 | 2022-02-10 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Regelung der Temperatur eines Substrats oder eines Bauteils, insbesondere einer zu beschichtenden Oberfläche des Substrats oder des Bauteils |
DE102020124022A1 (de) | 2020-09-15 | 2022-03-17 | centrotherm international AG | Werkstückträger, System und Betriebsverfahren für PECVD |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6012734A (ja) * | 1983-07-01 | 1985-01-23 | Hitachi Ltd | プラズマ処理装置 |
JPS62130277A (ja) * | 1985-08-09 | 1987-06-12 | Toa Nenryo Kogyo Kk | アモルフアスシリコン薄膜製造方法および装置 |
JPS63188943A (ja) * | 1987-01-30 | 1988-08-04 | Nec Corp | プラズマcvd装置 |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
JPH01108382A (ja) * | 1987-10-21 | 1989-04-25 | Nec Corp | プラズマ気相成長装置 |
US5055964A (en) | 1990-09-07 | 1991-10-08 | International Business Machines Corporation | Electrostatic chuck having tapered electrodes |
JPH04317325A (ja) * | 1991-04-17 | 1992-11-09 | Nec Corp | 半導体装置の製造装置 |
AU2003195A (en) * | 1994-06-21 | 1996-01-04 | Boc Group, Inc., The | Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines |
KR100252210B1 (ko) * | 1996-12-24 | 2000-04-15 | 윤종용 | 반도체장치 제조용 건식식각장치 |
JPH10289881A (ja) * | 1997-04-15 | 1998-10-27 | Kokusai Electric Co Ltd | プラズマcvd装置 |
KR100271767B1 (ko) * | 1998-06-09 | 2001-02-01 | 윤종용 | 플라즈마를 이용하는 반도체장치 제조설비 |
JP2002009043A (ja) | 2000-06-23 | 2002-01-11 | Hitachi Ltd | エッチング装置及びそれを用いた半導体装置の製造方法 |
US6741446B2 (en) | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
DE10152101A1 (de) | 2001-10-23 | 2003-05-22 | Infineon Technologies Ag | Elektrostatische Wafer-Haltevorrichtung |
US20060278339A1 (en) * | 2005-06-13 | 2006-12-14 | Lam Research Corporation, A Delaware Corporation | Etch rate uniformity using the independent movement of electrode pieces |
JP2007184476A (ja) | 2006-01-10 | 2007-07-19 | Hitachi Kokusai Electric Inc | 基板処理装置 |
KR100823302B1 (ko) * | 2006-12-08 | 2008-04-17 | 주식회사 테스 | 플라즈마 처리 장치 |
US20080202689A1 (en) * | 2006-12-08 | 2008-08-28 | Tes Co., Ltd. | Plasma processing apparatus |
KR100978754B1 (ko) | 2008-04-03 | 2010-08-30 | 주식회사 테스 | 플라즈마 처리 장치 |
US20080277064A1 (en) * | 2006-12-08 | 2008-11-13 | Tes Co., Ltd. | Plasma processing apparatus |
KR20080053167A (ko) * | 2006-12-08 | 2008-06-12 | 주식회사 테스 | 플라즈마 처리 장치 |
US8485128B2 (en) | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
US20120164834A1 (en) | 2010-12-22 | 2012-06-28 | Kevin Jennings | Variable-Density Plasma Processing of Semiconductor Substrates |
JP6120527B2 (ja) * | 2012-11-05 | 2017-04-26 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP6389528B2 (ja) * | 2014-01-28 | 2018-09-12 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 第1の基板を剥離させるための装置と方法 |
-
2014
- 2014-05-09 CN CN201480078566.4A patent/CN107078013B/zh active Active
- 2014-05-09 US US15/306,132 patent/US10707059B2/en active Active
- 2014-05-09 WO PCT/EP2014/059524 patent/WO2015169385A1/de active Application Filing
- 2014-05-09 JP JP2016564615A patent/JP6470313B2/ja active Active
- 2014-05-09 KR KR1020167030160A patent/KR102161873B1/ko active IP Right Grant
- 2014-05-09 EP EP14723419.9A patent/EP3140850B1/de active Active
- 2014-05-09 SG SG11201608771WA patent/SG11201608771WA/en unknown
-
2015
- 2015-03-24 TW TW104109440A patent/TWI677006B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20170047203A1 (en) | 2017-02-16 |
JP2017520080A (ja) | 2017-07-20 |
US10707059B2 (en) | 2020-07-07 |
WO2015169385A1 (de) | 2015-11-12 |
TW201543532A (zh) | 2015-11-16 |
CN107078013A (zh) | 2017-08-18 |
KR102161873B1 (ko) | 2020-10-06 |
CN107078013B (zh) | 2019-06-21 |
EP3140850A1 (de) | 2017-03-15 |
KR20170002396A (ko) | 2017-01-06 |
JP6470313B2 (ja) | 2019-02-13 |
TWI677006B (zh) | 2019-11-11 |
EP3140850B1 (de) | 2019-10-16 |
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