SG11201602116YA - Copper wire for bonding wire and method of producing copper wire for bonding wire - Google Patents

Copper wire for bonding wire and method of producing copper wire for bonding wire

Info

Publication number
SG11201602116YA
SG11201602116YA SG11201602116YA SG11201602116YA SG11201602116YA SG 11201602116Y A SG11201602116Y A SG 11201602116YA SG 11201602116Y A SG11201602116Y A SG 11201602116YA SG 11201602116Y A SG11201602116Y A SG 11201602116YA SG 11201602116Y A SG11201602116Y A SG 11201602116YA
Authority
SG
Singapore
Prior art keywords
wire
bonding
copper wire
bonding wire
copper
Prior art date
Application number
SG11201602116YA
Other languages
English (en)
Inventor
Satoshi Kumagai
Yu GU
Yuji Sato
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of SG11201602116YA publication Critical patent/SG11201602116YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Wire Bonding (AREA)
  • Metal Extraction Processes (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Non-Insulated Conductors (AREA)
SG11201602116YA 2013-10-10 2014-09-30 Copper wire for bonding wire and method of producing copper wire for bonding wire SG11201602116YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013213114A JP5747970B2 (ja) 2013-10-10 2013-10-10 ボンディングワイヤ用銅素線
PCT/JP2014/075999 WO2015053128A1 (ja) 2013-10-10 2014-09-30 ボンディングワイヤ用銅素線、及びボンディングワイヤ用銅素線の製造方法

Publications (1)

Publication Number Publication Date
SG11201602116YA true SG11201602116YA (en) 2016-05-30

Family

ID=52812946

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201602116YA SG11201602116YA (en) 2013-10-10 2014-09-30 Copper wire for bonding wire and method of producing copper wire for bonding wire

Country Status (8)

Country Link
JP (1) JP5747970B2 (ja)
KR (1) KR101558138B1 (ja)
CN (1) CN104904000B (ja)
MY (1) MY177767A (ja)
PH (1) PH12016500617A1 (ja)
SG (1) SG11201602116YA (ja)
TW (1) TWI540212B (ja)
WO (1) WO2015053128A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3667710B1 (en) * 2017-08-09 2022-01-05 NIPPON STEEL Chemical & Material Co., Ltd. Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
SG11202001066VA (en) * 2017-08-09 2020-03-30 Nippon Steel Chemical & Material Co Ltd Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786325A (ja) * 1993-09-14 1995-03-31 Hitachi Cable Ltd 電子機器用銅線
KR101006035B1 (ko) * 2005-06-15 2011-01-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 초고순도 구리 및 그 제조 방법 그리고 초고순도 구리로이루어지는 본딩 와이어
JP4885117B2 (ja) * 2007-12-03 2012-02-29 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
US20130042949A1 (en) * 2011-08-17 2013-02-21 Hitachi Cable, Ltd. Method of manufacturing soft-dilute-copper-alloy-material

Also Published As

Publication number Publication date
CN104904000A (zh) 2015-09-09
CN104904000B (zh) 2019-05-17
JP2015076559A (ja) 2015-04-20
TW201522673A (zh) 2015-06-16
PH12016500617B1 (en) 2016-06-13
JP5747970B2 (ja) 2015-07-15
KR20150085126A (ko) 2015-07-22
WO2015053128A1 (ja) 2015-04-16
MY177767A (en) 2020-09-23
PH12016500617A1 (en) 2016-06-13
TWI540212B (zh) 2016-07-01
KR101558138B1 (ko) 2015-10-06

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