SG11201504653SA - Substrate Cleaning Liquid And Substrate Cleaning Method - Google Patents

Substrate Cleaning Liquid And Substrate Cleaning Method

Info

Publication number
SG11201504653SA
SG11201504653SA SG11201504653SA SG11201504653SA SG11201504653SA SG 11201504653S A SG11201504653S A SG 11201504653SA SG 11201504653S A SG11201504653S A SG 11201504653SA SG 11201504653S A SG11201504653S A SG 11201504653SA SG 11201504653S A SG11201504653S A SG 11201504653SA
Authority
SG
Singapore
Prior art keywords
substrate cleaning
cleaning liquid
cleaning method
liquid
substrate
Prior art date
Application number
SG11201504653SA
Other languages
English (en)
Inventor
Junichi Ida
Tatsuo Nagai
Original Assignee
Kurita Water Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kurita Water Ind Ltd filed Critical Kurita Water Ind Ltd
Publication of SG11201504653SA publication Critical patent/SG11201504653SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
SG11201504653SA 2012-12-13 2013-10-09 Substrate Cleaning Liquid And Substrate Cleaning Method SG11201504653SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012272843A JP5854230B2 (ja) 2012-12-13 2012-12-13 基板洗浄液および基板洗浄方法
PCT/JP2013/077468 WO2014091817A1 (ja) 2012-12-13 2013-10-09 基板洗浄液および基板洗浄方法

Publications (1)

Publication Number Publication Date
SG11201504653SA true SG11201504653SA (en) 2015-07-30

Family

ID=50934116

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504653SA SG11201504653SA (en) 2012-12-13 2013-10-09 Substrate Cleaning Liquid And Substrate Cleaning Method

Country Status (7)

Country Link
US (1) US9528079B2 (zh)
JP (1) JP5854230B2 (zh)
KR (1) KR20150095626A (zh)
CN (1) CN104871296B (zh)
SG (1) SG11201504653SA (zh)
TW (1) TWI559400B (zh)
WO (1) WO2014091817A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147619B2 (en) 2015-08-27 2018-12-04 Toshiba Memory Corporation Substrate treatment apparatus, substrate treatment method, and etchant
JP6751326B2 (ja) * 2016-09-16 2020-09-02 キオクシア株式会社 基板処理装置および半導体装置の製造方法
JP6850650B2 (ja) * 2017-03-27 2021-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR101987957B1 (ko) * 2017-09-05 2019-06-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102391976B1 (ko) * 2017-10-27 2022-04-29 세메스 주식회사 분배기 및 기판 처리 장치
US11056348B2 (en) * 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
CN110369367A (zh) * 2019-08-01 2019-10-25 山东泰开高压开关有限公司 降低废液量的方法及装置
US11380776B2 (en) 2020-09-29 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Field-effect transistor device with gate spacer structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3467411B2 (ja) 1998-08-07 2003-11-17 松下電器産業株式会社 エッチング液，その製造方法及びエッチング方法
JP3889271B2 (ja) 2000-12-15 2007-03-07 株式会社東芝 半導体装置の製造方法
JP4355201B2 (ja) * 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
WO2005067019A1 (en) * 2003-12-30 2005-07-21 Akrion, Llc System and method for selective etching of silicon nitride during substrate processing
TWI364450B (en) * 2004-08-09 2012-05-21 Kao Corp Polishing composition
JP4462146B2 (ja) * 2004-09-17 2010-05-12 栗田工業株式会社 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置
CN101331811B (zh) * 2005-12-20 2010-09-08 三菱瓦斯化学株式会社 用于除去配线基板的残渣的组合物以及洗涤方法
WO2007130471A2 (en) * 2006-05-01 2007-11-15 The Charles Stark Draper Laboratory, Inc. Systems and methods for high density multi-component modules
JP4799332B2 (ja) 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
US7514797B2 (en) * 2007-05-31 2009-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-die wafer level packaging
WO2009037903A1 (ja) 2007-09-21 2009-03-26 Hitachi Chemical Co., Ltd. シリコン膜研磨用ｃｍｐスラリー及び研磨方法
CN101465273B (zh) * 2007-12-18 2011-04-20 中芯国际集成电路制造(上海)有限公司 用于减少晶片表面缺陷的湿式蚀刻方法及其装置
JP2012074601A (ja) 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
WO2012078580A1 (en) * 2010-12-10 2012-06-14 Fsi International, Inc. Process for selectively removing nitride from substrates
JP2012169562A (ja) * 2011-02-16 2012-09-06 Kurita Water Ind Ltd 窒化物半導体材料の表面処理方法および表面処理システム
JP2012204424A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体基板の表面処理方法および基板処理装置

Also Published As

Publication number Publication date
KR20150095626A (ko) 2015-08-21
TW201430947A (zh) 2014-08-01
CN104871296A (zh) 2015-08-26
JP5854230B2 (ja) 2016-02-09
JP2014120533A (ja) 2014-06-30
CN104871296B (zh) 2017-04-12
US9528079B2 (en) 2016-12-27
TWI559400B (zh) 2016-11-21
WO2014091817A1 (ja) 2014-06-19
US20150307819A1 (en) 2015-10-29

Similar Documents

Publication Publication Date Title
HK1252731A1 (zh) 端口和表面清潔設備和技術
HK1206776A1 (zh) 改進的清洗製劑和方法
SG2014012306A (en) Etching liquid composition and etching method
TWI561317B (en) Substrate cleaning apparatus and substrate processing apparatus
HK1210814A1 (zh) 改良式清洗設備及方法
IL238967A0 (en) A cleaning fluid for semiconductor elements and a cleaning method using the same
PL2684501T3 (pl) Urządzenie do czyszczenia powierzchni
PL2671493T3 (pl) Urządzenie do czyszczenia powierzchni
GB201319183D0 (en) Liquid jet and liquid jet apparatus
EP2822433A4 (en) SURFACE CLEANING APPARATUS
GB2509238B (en) Surface cleaning apparatus
SG11201504653SA (en) Substrate Cleaning Liquid And Substrate Cleaning Method
SG11201504269TA (en) Method for cleaning glass substrate
SG2013076633A (en) Cleaning composition and cleaning method using the same
SG11201501256YA (en) Cleaning method and cleaning system for semiconductor substrates
SG11201404531UA (en) Polishing liquid for metal and polishing method
EP2827363A4 (en) ACTION COMPOSITION AND METHODS OF PROCESSING
HK1206934A1 (zh) 組織保存液及組織保存方法
EP2832451A4 (en) LIQUID EJECTION APPARATUS AND LIQUID EJECTION METHOD
GB201220913D0 (en) Improved cleaning apparatus and method
EP2724774A4 (en) METHOD AND DEVICE FOR MIXING LIQUIDS
GB201110698D0 (en) Devices and methods for emanatign liquids
EP2803396A4 (en) SAMPLE CONCENTRATION CONTAINER AND SAMPLE CONCENTRATION METHOD THEREWITH
ZA201405829B (en) Cleaning arrangement and method of use
EP2840163A4 (en) DEPOSITION DEVICE AND DEPOSIT METHOD