SG11201503724RA - Tungsten sintered compact sputtering target and method for producing same - Google Patents
Tungsten sintered compact sputtering target and method for producing sameInfo
- Publication number
- SG11201503724RA SG11201503724RA SG11201503724RA SG11201503724RA SG11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering target
- sintered compact
- producing same
- tungsten sintered
- compact sputtering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013060159 | 2013-03-22 | ||
| PCT/JP2014/057646 WO2014148588A1 (fr) | 2013-03-22 | 2014-03-20 | Cible de pulvérisation à corps de tungstène fritté et son procédé de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201503724RA true SG11201503724RA (en) | 2015-06-29 |
Family
ID=51580258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201503724RA SG11201503724RA (en) | 2013-03-22 | 2014-03-20 | Tungsten sintered compact sputtering target and method for producing same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9812301B2 (fr) |
| EP (1) | EP2907891B1 (fr) |
| JP (1) | JP5856710B2 (fr) |
| KR (1) | KR102059710B1 (fr) |
| CN (1) | CN105102670B (fr) |
| SG (1) | SG11201503724RA (fr) |
| TW (1) | TWI615481B (fr) |
| WO (1) | WO2014148588A1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5944482B2 (ja) | 2012-03-02 | 2016-07-05 | Ｊｘ金属株式会社 | タングステン焼結体スパッタリングターゲット及び該ターゲットを用いて成膜したタングステン膜 |
| JP6310088B2 (ja) * | 2014-09-30 | 2018-04-11 | Ｊｘ金属株式会社 | タングステンスパッタリングターゲット及びその製造方法 |
| JP5999161B2 (ja) * | 2014-10-08 | 2016-09-28 | 三菱マテリアル株式会社 | Ｗ−Ｔｉスパッタリングターゲット |
| JP2017057490A (ja) * | 2015-09-18 | 2017-03-23 | 山陽特殊製鋼株式会社 | Ｃｏ−Ｆｅ−Ｂ系合金ターゲット材 |
| JP6660130B2 (ja) | 2015-09-18 | 2020-03-04 | 山陽特殊製鋼株式会社 | ＣｏＦｅＢ系合金ターゲット材 |
| US10043670B2 (en) * | 2015-10-22 | 2018-08-07 | Applied Materials, Inc. | Systems and methods for low resistivity physical vapor deposition of a tungsten film |
| TW201730360A (zh) * | 2015-10-27 | 2017-09-01 | 塔沙Ｓｍｄ公司 | 具有改良特性之低電阻率鎢膜及鎢靶材 |
| JP7308013B2 (ja) * | 2017-11-10 | 2023-07-13 | Ｊｘ金属株式会社 | タングステンスパッタリングターゲット及びその製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0593267A (ja) | 1991-10-01 | 1993-04-16 | Hitachi Metals Ltd | 半導体用タングステンターゲツトおよびその製造方法 |
| JPH0776771A (ja) | 1993-09-08 | 1995-03-20 | Japan Energy Corp | タングステンスパッタリングターゲット |
| JP3112804B2 (ja) * | 1995-03-13 | 2000-11-27 | セントラル硝子株式会社 | 半導体用タングステンターゲット |
| JP3086447B1 (ja) | 1999-03-04 | 2000-09-11 | 株式会社ジャパンエナジー | スパッタリング用タングステンターゲットおよびその製造方法 |
| JP3721014B2 (ja) | 1999-09-28 | 2005-11-30 | 株式会社日鉱マテリアルズ | スッパタリング用タングステンターゲットの製造方法 |
| JP4718664B2 (ja) * | 2000-05-22 | 2011-07-06 | 株式会社東芝 | スパッタリングターゲットの製造方法 |
| US8252126B2 (en) | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
| WO2006001976A2 (fr) * | 2004-06-15 | 2006-01-05 | Tosoh Smd, Inc. | Procedes de fabrication de cibles de grande purete |
| JP2005171389A (ja) | 2005-02-16 | 2005-06-30 | Nikko Materials Co Ltd | スパッタリング用タングステンターゲットの製造方法 |
| WO2007097396A1 (fr) | 2006-02-22 | 2007-08-30 | Nippon Mining & Metals Co., Ltd. | Cible de pulverisation frittee faite de metaux a temperatures de fusion elevees |
| JP4885065B2 (ja) | 2007-06-11 | 2012-02-29 | Ｊｘ日鉱日石金属株式会社 | スッパタリング用タングステン焼結体ターゲットの製造方法 |
| EP2284289B1 (fr) * | 2008-06-02 | 2014-01-22 | JX Nippon Mining & Metals Corporation | Cible de pulvérisation de matériau fritté de tungstène |
| CN101748365B (zh) | 2008-12-19 | 2013-02-13 | 北京有色金属研究总院 | 一种高纯高富钨相钨钛靶材及其制备方法 |
| JP4797099B2 (ja) | 2009-10-01 | 2011-10-19 | Ｊｘ日鉱日石金属株式会社 | 高純度タングステン粉末の製造方法 |
| JP5944482B2 (ja) | 2012-03-02 | 2016-07-05 | Ｊｘ金属株式会社 | タングステン焼結体スパッタリングターゲット及び該ターゲットを用いて成膜したタングステン膜 |
| CN104508176A (zh) | 2012-11-02 | 2015-04-08 | 吉坤日矿日石金属株式会社 | 钨烧结体溅射靶和使用该靶形成的钨膜 |
-
2014
- 2014-03-20 WO PCT/JP2014/057646 patent/WO2014148588A1/fr active Application Filing
- 2014-03-20 KR KR1020157018174A patent/KR102059710B1/ko active IP Right Grant
- 2014-03-20 SG SG11201503724RA patent/SG11201503724RA/en unknown
- 2014-03-20 US US14/654,568 patent/US9812301B2/en active Active
- 2014-03-20 CN CN201480004638.0A patent/CN105102670B/zh active Active
- 2014-03-20 EP EP14769601.7A patent/EP2907891B1/fr active Active
- 2014-03-20 JP JP2015506842A patent/JP5856710B2/ja active Active
- 2014-03-21 TW TW103110632A patent/TWI615481B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2907891B1 (fr) | 2017-09-13 |
| CN105102670B (zh) | 2017-06-23 |
| WO2014148588A1 (fr) | 2014-09-25 |
| JPWO2014148588A1 (ja) | 2017-02-16 |
| TW201504451A (zh) | 2015-02-01 |
| JP5856710B2 (ja) | 2016-02-10 |
| CN105102670A (zh) | 2015-11-25 |
| KR20150130967A (ko) | 2015-11-24 |
| EP2907891A1 (fr) | 2015-08-19 |
| US9812301B2 (en) | 2017-11-07 |
| EP2907891A4 (fr) | 2016-06-01 |
| US20150357170A1 (en) | 2015-12-10 |
| KR102059710B1 (ko) | 2019-12-26 |
| TWI615481B (zh) | 2018-02-21 |
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