SG11201403501PA - Composite substrate - Google Patents
Composite substrateInfo
- Publication number
- SG11201403501PA SG11201403501PA SG11201403501PA SG11201403501PA SG11201403501PA SG 11201403501P A SG11201403501P A SG 11201403501PA SG 11201403501P A SG11201403501P A SG 11201403501PA SG 11201403501P A SG11201403501P A SG 11201403501PA SG 11201403501P A SG11201403501P A SG 11201403501PA
- Authority
- SG
- Singapore
- Prior art keywords
- composite substrate
- composite
- substrate
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Ceramic Products (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011280806 | 2011-12-22 | ||
| PCT/JP2012/082999 WO2013094665A1 (ja) | 2011-12-22 | 2012-12-20 | 複合基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201403501PA true SG11201403501PA (en) | 2014-09-26 |
Family
ID=48668548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201403501PA SG11201403501PA (en) | 2011-12-22 | 2012-12-20 | Composite substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9425248B2 (ja) |
| EP (1) | EP2797107B1 (ja) |
| JP (1) | JP5928481B2 (ja) |
| KR (1) | KR101852229B1 (ja) |
| CN (1) | CN104040685B (ja) |
| SG (1) | SG11201403501PA (ja) |
| TW (1) | TWI556975B (ja) |
| WO (1) | WO2013094665A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9716107B2 (en) | 2014-02-21 | 2017-07-25 | Shin-Etsu Chemical Co., Ltd. | Composite substrate |
| JP6208646B2 (ja) * | 2014-09-30 | 2017-10-04 | 信越化学工業株式会社 | 貼り合わせ基板とその製造方法、および貼り合わせ用支持基板 |
| JP2017059598A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社東芝 | ウェーハ及び半導体装置 |
| DE112017004718T5 (de) * | 2016-09-20 | 2019-06-13 | Ngk Insulators, Ltd. | Verbundsubstrat, Verfahren zu seiner Herstellung und elektronische Vorrichtung |
| US11069560B2 (en) | 2016-11-01 | 2021-07-20 | Shin-Etsu Chemical Co., Ltd. | Method of transferring device layer to transfer substrate and highly thermal conductive substrate |
| US11361969B2 (en) | 2017-07-14 | 2022-06-14 | Shin-Etsu Chemical Co., Ltd. | Device substrate with high thermal conductivity and method of manufacturing the same |
| CN110943066A (zh) * | 2018-09-21 | 2020-03-31 | 联华电子股份有限公司 | 具有高电阻晶片的半导体结构及高电阻晶片的接合方法 |
| US11594441B2 (en) | 2021-04-09 | 2023-02-28 | Applied Materials, Inc. | Handling for high resistivity substrates |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254722A (ja) | 1984-05-31 | 1985-12-16 | Nec Corp | 半導体装置用基板 |
| DE4017181C2 (de) * | 1990-05-29 | 1998-08-27 | Daimler Benz Aerospace Ag | Elektrisches Bauelement |
| JP3047986B2 (ja) | 1990-07-25 | 2000-06-05 | 株式会社日立製作所 | 半導体装置 |
| JPH07202063A (ja) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | セラミックス回路基板 |
| US5877094A (en) | 1994-04-07 | 1999-03-02 | International Business Machines Corporation | Method for fabricating a silicon-on-sapphire wafer |
| IT1268123B1 (it) | 1994-10-13 | 1997-02-20 | Sgs Thomson Microelectronics | Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione. |
| US6391812B1 (en) | 1999-06-23 | 2002-05-21 | Ngk Insulators, Ltd. | Silicon nitride sintered body and method of producing the same |
| JP4571728B2 (ja) * | 1999-06-23 | 2010-10-27 | 日本碍子株式会社 | 窒化珪素焼結体及びその製造方法 |
| JP4714423B2 (ja) * | 2004-01-06 | 2011-06-29 | Ｏｋｉセミコンダクタ株式会社 | 半導体ウエハとその製造方法 |
| JP4975974B2 (ja) * | 2005-03-18 | 2012-07-11 | ラピスセミコンダクタ株式会社 | Ｓｏｓウェハおよびその製造方法 |
| US7446284B2 (en) * | 2005-12-21 | 2008-11-04 | Momentive Performance Materials Inc. | Etch resistant wafer processing apparatus and method for producing the same |
| EP1901345A1 (en) * | 2006-08-30 | 2008-03-19 | Siltronic AG | Multilayered semiconductor wafer and process for manufacturing the same |
| JP4458116B2 (ja) * | 2007-05-30 | 2010-04-28 | 住友電気工業株式会社 | エピタキシャル層成長用ｉｉｉ族窒化物半導体層貼り合わせ基板および半導体デバイス |
| US20100193900A1 (en) | 2007-07-13 | 2010-08-05 | National University Corporation Tohoku University | Soi substrate and semiconductor device using an soi substrate |
| JP2009081223A (ja) * | 2007-09-26 | 2009-04-16 | Tokyo Electron Ltd | 静電チャック部材 |
| JP5532680B2 (ja) | 2009-05-27 | 2014-06-25 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ |
| JP5926887B2 (ja) * | 2010-02-03 | 2016-05-25 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| US9184228B2 (en) * | 2011-03-07 | 2015-11-10 | Sumitomo Electric Industries, Ltd. | Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer |
-
2012
- 2012-12-20 JP JP2013550319A patent/JP5928481B2/ja active Active
- 2012-12-20 WO PCT/JP2012/082999 patent/WO2013094665A1/ja active Application Filing
- 2012-12-20 US US14/358,923 patent/US9425248B2/en active Active
- 2012-12-20 EP EP12859808.3A patent/EP2797107B1/en active Active
- 2012-12-20 KR KR1020147012955A patent/KR101852229B1/ko active IP Right Grant
- 2012-12-20 SG SG11201403501PA patent/SG11201403501PA/en unknown
- 2012-12-20 CN CN201280063158.2A patent/CN104040685B/zh active Active
- 2012-12-21 TW TW101148984A patent/TWI556975B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2013094665A1 (ja) | 2015-04-27 |
| US9425248B2 (en) | 2016-08-23 |
| EP2797107A4 (en) | 2015-08-05 |
| EP2797107B1 (en) | 2017-09-20 |
| WO2013094665A1 (ja) | 2013-06-27 |
| US20140327116A1 (en) | 2014-11-06 |
| TWI556975B (zh) | 2016-11-11 |
| EP2797107A1 (en) | 2014-10-29 |
| CN104040685B (zh) | 2016-11-02 |
| JP5928481B2 (ja) | 2016-06-01 |
| CN104040685A (zh) | 2014-09-10 |
| TW201341200A (zh) | 2013-10-16 |
| KR101852229B1 (ko) | 2018-04-25 |
| KR20140108221A (ko) | 2014-09-05 |
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