SG11201402388YA - Magnetron sputtering target and method for manufacturing the same - Google Patents

Magnetron sputtering target and method for manufacturing the same

Info

Publication number
SG11201402388YA
SG11201402388YA SG11201402388YA SG11201402388YA SG11201402388YA SG 11201402388Y A SG11201402388Y A SG 11201402388YA SG 11201402388Y A SG11201402388Y A SG 11201402388YA SG 11201402388Y A SG11201402388Y A SG 11201402388YA SG 11201402388Y A SG11201402388Y A SG 11201402388YA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
sputtering target
magnetron sputtering
magnetron
Prior art date
Application number
SG11201402388YA
Other languages
English (en)
Inventor
Takanobu Miyashita
Yasuyuki Goto
Original Assignee
Tanaka Precious Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=48429393&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201402388Y(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tanaka Precious Metal Ind filed Critical Tanaka Precious Metal Ind
Publication of SG11201402388YA publication Critical patent/SG11201402388YA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • H01J37/3429Plural materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0433Nickel- or cobalt-based alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/07Alloys based on nickel or cobalt based on cobalt
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06Alloys based on chromium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C30/00Alloys containing less than 50% by weight of each constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183Sputtering targets therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
SG11201402388YA 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same SG11201402388YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011252103A JP5863411B2 (ja) 2011-11-17 2011-11-17 マグネトロンスパッタリング用ターゲットおよびその製造方法
PCT/JP2012/076395 WO2013073323A1 (ja) 2011-11-17 2012-10-12 マグネトロンスパッタリング用ターゲットおよびその製造方法

Publications (1)

Publication Number Publication Date
SG11201402388YA true SG11201402388YA (en) 2014-10-30

Family

ID=48429393

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201505966UA SG10201505966UA (en) 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same
SG11201402388YA SG11201402388YA (en) 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201505966UA SG10201505966UA (en) 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same

Country Status (6)

Country Link
US (1) US9502224B2 (zh)
JP (1) JP5863411B2 (zh)
MY (1) MY168164A (zh)
SG (2) SG10201505966UA (zh)
TW (1) TWI496913B (zh)
WO (1) WO2013073323A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4871406B1 (ja) * 2010-08-06 2012-02-08 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
US20160276143A1 (en) * 2013-10-29 2016-09-22 Tanaka Kikinzoku Kogyo K.K. Target for magnetron sputtering
JP6728094B2 (ja) * 2017-03-31 2020-07-22 Jx金属株式会社 強磁性材スパッタリングターゲット

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797137B2 (en) * 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
US20030227014A1 (en) * 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
US20050277002A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
CN101389784B (zh) * 2006-02-22 2011-04-20 Jx日矿日石金属株式会社 含有高熔点金属的烧结体溅射靶
JP5155565B2 (ja) 2007-01-04 2013-03-06 三井金属鉱業株式会社 CoCrPt系スパッタリングターゲットおよびその製造方法
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
JP2009132975A (ja) 2007-11-30 2009-06-18 Mitsubishi Materials Corp 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット
WO2009119812A1 (ja) * 2008-03-28 2009-10-01 日鉱金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
JP2009293102A (ja) 2008-06-09 2009-12-17 Mitsubishi Materials Corp 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット
SG172295A1 (en) 2009-03-27 2011-07-28 Jx Nippon Mining & Metals Corp Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
JP4422203B1 (ja) * 2009-04-01 2010-02-24 Tanakaホールディングス株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
SG173596A1 (en) 2009-08-06 2011-09-29 Jx Nippon Mining & Metals Coporation Inorganic-particle-dispersed sputtering target
GB0922294D0 (en) * 2009-12-22 2010-02-03 3M Innovative Properties Co A dispensing device for a dental material and a method of filling the device
JP4673453B1 (ja) * 2010-01-21 2011-04-20 Jx日鉱日石金属株式会社 強磁性材スパッタリングターゲット
JP2011175725A (ja) * 2010-01-26 2011-09-08 Mitsubishi Materials Corp 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP4871406B1 (ja) 2010-08-06 2012-02-08 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
SG188603A1 (en) * 2010-12-17 2013-04-30 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target

Also Published As

Publication number Publication date
SG10201505966UA (en) 2015-09-29
WO2013073323A1 (ja) 2013-05-23
JP2013108110A (ja) 2013-06-06
US20140311901A1 (en) 2014-10-23
TWI496913B (zh) 2015-08-21
US9502224B2 (en) 2016-11-22
MY168164A (en) 2018-10-11
JP5863411B2 (ja) 2016-02-16
TW201335394A (zh) 2013-09-01

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