SG10201505966UA - Magnetron sputtering target and method for manufacturing the same - Google Patents

Magnetron sputtering target and method for manufacturing the same

Info

Publication number
SG10201505966UA
SG10201505966UA SG10201505966UA SG10201505966UA SG10201505966UA SG 10201505966U A SG10201505966U A SG 10201505966UA SG 10201505966U A SG10201505966U A SG 10201505966UA SG 10201505966U A SG10201505966U A SG 10201505966UA SG 10201505966U A SG10201505966U A SG 10201505966UA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
sputtering target
magnetron sputtering
magnetron
Prior art date
Application number
SG10201505966UA
Inventor
Takanobu Miyashita
Yasuyuki Goto
Original Assignee
Tanaka Precious Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=48429393&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG10201505966U(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tanaka Precious Metal Ind filed Critical Tanaka Precious Metal Ind
Publication of SG10201505966UA publication Critical patent/SG10201505966UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0433—Nickel- or cobalt-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
SG10201505966UA 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same SG10201505966UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011252103A JP5863411B2 (en) 2011-11-17 2011-11-17 Magnetron sputtering target and method for manufacturing the same

Publications (1)

Publication Number Publication Date
SG10201505966UA true SG10201505966UA (en) 2015-09-29

Family

ID=48429393

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201505966UA SG10201505966UA (en) 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same
SG11201402388YA SG11201402388YA (en) 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201402388YA SG11201402388YA (en) 2011-11-17 2012-10-12 Magnetron sputtering target and method for manufacturing the same

Country Status (6)

Country Link
US (1) US9502224B2 (en)
JP (1) JP5863411B2 (en)
MY (1) MY168164A (en)
SG (2) SG10201505966UA (en)
TW (1) TWI496913B (en)
WO (1) WO2013073323A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4871406B1 (en) * 2010-08-06 2012-02-08 田中貴金属工業株式会社 Magnetron sputtering target and method for manufacturing the same
US20160276143A1 (en) * 2013-10-29 2016-09-22 Tanaka Kikinzoku Kogyo K.K. Target for magnetron sputtering
JP6728094B2 (en) * 2017-03-31 2020-07-22 Ｊｘ金属株式会社 Ferromagnetic material sputtering target

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797137B2 (en) * 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
US20030227014A1 (en) * 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
US20050277002A1 (en) * 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
CN101389784B (en) * 2006-02-22 2011-04-20 Jx日矿日石金属株式会社 Sintered sputtering target made of high-melting metals
JP5155565B2 (en) 2007-01-04 2013-03-06 三井金属鉱業株式会社 CoCrPt-based sputtering target and method for producing the same
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
JP2009132975A (en) 2007-11-30 2009-06-18 Mitsubishi Materials Corp Sputtering target for forming film of perpendicular magnetic recording medium having low relative permeability
WO2009119812A1 (en) * 2008-03-28 2009-10-01 日鉱金属株式会社 Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material
JP2009293102A (en) 2008-06-09 2009-12-17 Mitsubishi Materials Corp Sputtering target for depositing vertical magnetic recording medium film with low relative permeability
SG172295A1 (en) 2009-03-27 2011-07-28 Jx Nippon Mining & Metals Corp Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
JP4422203B1 (en) * 2009-04-01 2010-02-24 Ｔａｎａｋａホールディングス株式会社 Magnetron sputtering target and method for manufacturing the same
SG173596A1 (en) 2009-08-06 2011-09-29 Jx Nippon Mining & Metals Coporation Inorganic-particle-dispersed sputtering target
GB0922294D0 (en) * 2009-12-22 2010-02-03 3M Innovative Properties Co A dispensing device for a dental material and a method of filling the device
JP4673453B1 (en) * 2010-01-21 2011-04-20 Ｊｘ日鉱日石金属株式会社 Ferromagnetic material sputtering target
JP2011175725A (en) * 2010-01-26 2011-09-08 Mitsubishi Materials Corp Sputtering target for forming magnetic recording medium film and method for manufacturing the same
JP4871406B1 (en) 2010-08-06 2012-02-08 田中貴金属工業株式会社 Magnetron sputtering target and method for manufacturing the same
SG188603A1 (en) * 2010-12-17 2013-04-30 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target

Also Published As

Publication number Publication date
WO2013073323A1 (en) 2013-05-23
JP2013108110A (en) 2013-06-06
US20140311901A1 (en) 2014-10-23
TWI496913B (en) 2015-08-21
SG11201402388YA (en) 2014-10-30
US9502224B2 (en) 2016-11-22
MY168164A (en) 2018-10-11
JP5863411B2 (en) 2016-02-16
TW201335394A (en) 2013-09-01

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