SG11201400496VA - Double layer transfer method - Google Patents
Double layer transfer methodInfo
- Publication number
- SG11201400496VA SG11201400496VA SG11201400496VA SG11201400496VA SG11201400496VA SG 11201400496V A SG11201400496V A SG 11201400496VA SG 11201400496V A SG11201400496V A SG 11201400496VA SG 11201400496V A SG11201400496V A SG 11201400496VA SG 11201400496V A SG11201400496V A SG 11201400496VA
- Authority
- SG
- Singapore
- Prior art keywords
- double layer
- transfer method
- layer transfer
- double
- transfer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158944A FR2980919B1 (fr) | 2011-10-04 | 2011-10-04 | Procede de double report de couche |
PCT/FR2012/052100 WO2013050683A1 (fr) | 2011-10-04 | 2012-09-20 | Procédé de double report de couche |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201400496VA true SG11201400496VA (en) | 2014-09-26 |
Family
ID=47023003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201400496VA SG11201400496VA (en) | 2011-10-04 | 2012-09-20 | Double layer transfer method |
Country Status (8)
Country | Link |
---|---|
US (1) | US9076841B2 (zh) |
EP (1) | EP2764535B1 (zh) |
JP (1) | JP5676059B2 (zh) |
KR (1) | KR101991389B1 (zh) |
CN (1) | CN103875062B (zh) |
FR (1) | FR2980919B1 (zh) |
SG (1) | SG11201400496VA (zh) |
WO (1) | WO2013050683A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981940B1 (fr) * | 2011-10-26 | 2014-06-06 | Commissariat Energie Atomique | Procede de collage direct d'une couche d'oxyde de silicium |
WO2015109240A1 (en) * | 2014-01-16 | 2015-07-23 | Research Foundation Of The City University Of New York | Center-side method of producing superhydrophobic surface |
FR3029352B1 (fr) * | 2014-11-27 | 2017-01-06 | Soitec Silicon On Insulator | Procede d'assemblage de deux substrats |
CN104993011A (zh) * | 2015-05-25 | 2015-10-21 | 中国电子科技集团公司第十八研究所 | 利用选择腐蚀衬底剥离制备薄膜太阳能电池的工艺 |
DE102015210384A1 (de) * | 2015-06-05 | 2016-12-08 | Soitec | Verfahren zur mechanischen Trennung für eine Doppelschichtübertragung |
US20160379943A1 (en) * | 2015-06-25 | 2016-12-29 | Skyworks Solutions, Inc. | Method and apparatus for high performance passive-active circuit integration |
FR3041364B1 (fr) * | 2015-09-18 | 2017-10-06 | Soitec Silicon On Insulator | Procede de transfert de paves monocristallins |
TW201737766A (zh) * | 2016-01-21 | 2017-10-16 | 康寧公司 | 處理基板的方法 |
FR3087297B1 (fr) * | 2018-10-12 | 2021-01-08 | Commissariat Energie Atomique | Procede de transfert de film mince |
CH716104A1 (fr) * | 2019-04-18 | 2020-10-30 | Sy&Se Sa | Procédé d'amélioration de l'adhérence d'une couche sur un substrat. |
CN112760615B (zh) * | 2020-12-17 | 2023-04-28 | 武汉新芯集成电路制造有限公司 | 一种二氧化硅薄膜及其低温制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100592467C (zh) * | 1996-08-27 | 2010-02-24 | 精工爱普生株式会社 | 转移方法 |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
US6638835B2 (en) * | 2001-12-11 | 2003-10-28 | Intel Corporation | Method for bonding and debonding films using a high-temperature polymer |
FR2849268A1 (fr) * | 2002-12-24 | 2004-06-25 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat demontable |
US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
JP2007088235A (ja) * | 2005-09-22 | 2007-04-05 | Seiko Epson Corp | 薄膜素子の転写方法、製造方法、薄膜装置の製造方法及び電子機器 |
JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
EP2294607A2 (en) * | 2008-05-17 | 2011-03-16 | Astrowatt, Inc. | Method of forming an electronic device using a separation technique |
JP2010054695A (ja) * | 2008-08-27 | 2010-03-11 | National Institute Of Advanced Industrial Science & Technology | 光デバイスの製造方法 |
JP5409084B2 (ja) * | 2009-04-06 | 2014-02-05 | キヤノン株式会社 | 半導体装置の製造方法 |
-
2011
- 2011-10-04 FR FR1158944A patent/FR2980919B1/fr not_active Expired - Fee Related
-
2012
- 2012-09-20 WO PCT/FR2012/052100 patent/WO2013050683A1/fr active Application Filing
- 2012-09-20 KR KR1020147012123A patent/KR101991389B1/ko active IP Right Grant
- 2012-09-20 JP JP2014533962A patent/JP5676059B2/ja active Active
- 2012-09-20 EP EP12773069.5A patent/EP2764535B1/fr active Active
- 2012-09-20 CN CN201280048909.3A patent/CN103875062B/zh active Active
- 2012-09-20 SG SG11201400496VA patent/SG11201400496VA/en unknown
- 2012-09-20 US US14/349,784 patent/US9076841B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103875062B (zh) | 2016-08-03 |
KR101991389B1 (ko) | 2019-06-20 |
JP2014534621A (ja) | 2014-12-18 |
WO2013050683A9 (fr) | 2014-12-31 |
WO2013050683A1 (fr) | 2013-04-11 |
CN103875062A (zh) | 2014-06-18 |
JP5676059B2 (ja) | 2015-02-25 |
FR2980919A1 (fr) | 2013-04-05 |
EP2764535A1 (fr) | 2014-08-13 |
FR2980919B1 (fr) | 2014-02-21 |
EP2764535B1 (fr) | 2015-10-14 |
US9076841B2 (en) | 2015-07-07 |
US20140295642A1 (en) | 2014-10-02 |
KR20140082780A (ko) | 2014-07-02 |
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