SG106056A1 - Waveguide for microwave excitation of plasma in an ion beam guide - Google Patents
Waveguide for microwave excitation of plasma in an ion beam guideInfo
- Publication number
- SG106056A1 SG106056A1 SG200104510A SG200104510A SG106056A1 SG 106056 A1 SG106056 A1 SG 106056A1 SG 200104510 A SG200104510 A SG 200104510A SG 200104510 A SG200104510 A SG 200104510A SG 106056 A1 SG106056 A1 SG 106056A1
- Authority
- SG
- Singapore
- Prior art keywords
- waveguide
- plasma
- ion beam
- beam guide
- microwave excitation
- Prior art date
Links
- 230000005284 excitation Effects 0.000 title 1
- 238000010884 ion-beam technique Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/625,718 US6541781B1 (en) | 2000-07-25 | 2000-07-25 | Waveguide for microwave excitation of plasma in an ion beam guide |
Publications (1)
Publication Number | Publication Date |
---|---|
SG106056A1 true SG106056A1 (en) | 2004-09-30 |
Family
ID=24507265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200104510A SG106056A1 (en) | 2000-07-25 | 2001-07-25 | Waveguide for microwave excitation of plasma in an ion beam guide |
Country Status (7)
Country | Link |
---|---|
US (1) | US6541781B1 (ko) |
EP (1) | EP1176623B1 (ko) |
JP (1) | JP4947402B2 (ko) |
KR (1) | KR100602319B1 (ko) |
DE (1) | DE60134091D1 (ko) |
SG (1) | SG106056A1 (ko) |
TW (1) | TW527617B (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6885014B2 (en) | 2002-05-01 | 2005-04-26 | Axcelis Technologies, Inc. | Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam |
US6414329B1 (en) * | 2000-07-25 | 2002-07-02 | Axcelis Technologies, Inc. | Method and system for microwave excitation of plasma in an ion beam guide |
US6703628B2 (en) | 2000-07-25 | 2004-03-09 | Axceliss Technologies, Inc | Method and system for ion beam containment in an ion beam guide |
JP3869680B2 (ja) * | 2001-05-29 | 2007-01-17 | 株式会社 Sen−Shi・アクセリス カンパニー | イオン注入装置 |
JP3840108B2 (ja) * | 2001-12-27 | 2006-11-01 | 株式会社 Sen−Shi・アクセリス カンパニー | イオンビーム処理方法及び処理装置 |
US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
US6891174B2 (en) * | 2003-07-31 | 2005-05-10 | Axcelis Technologies, Inc. | Method and system for ion beam containment using photoelectrons in an ion beam guide |
US7459692B2 (en) * | 2004-11-19 | 2008-12-02 | Varian Semiconductor Equipment Associates, Inc. | Electron confinement inside magnet of ion implanter |
US7427751B2 (en) * | 2006-02-15 | 2008-09-23 | Varian, Inc. | High sensitivity slitless ion source mass spectrometer for trace gas leak detection |
CA2725544C (en) * | 2008-05-30 | 2017-12-19 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | A radio-frequency-free hybrid electrostatic/magnetostatic cell for transporting, trapping, and dissociating ions in mass spectrometers |
WO2014028695A1 (en) | 2012-08-16 | 2014-02-20 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Electron source for an rf-free electromagnetostatic electron-induced dissociation cell and use in a tandem mass spectrometer |
CN104718597B (zh) * | 2012-10-12 | 2017-08-04 | Dh科技发展私人贸易有限公司 | 用于质谱分析法的离子导向件 |
US9576767B2 (en) | 2013-05-15 | 2017-02-21 | Indian Institute Of Technology Kanpur | Focused ion beam systems and methods of operation |
US9299536B2 (en) * | 2013-10-17 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Wide metal-free plasma flood gun |
JP6207418B2 (ja) * | 2014-02-10 | 2017-10-04 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置、ビーム平行化器、及びビーム平行化方法 |
CN105448371A (zh) * | 2015-11-20 | 2016-03-30 | 中国电子科技集团公司第四十八研究所 | 一种静电场加速的高能离子注入机的高压防护及射线屏蔽系统 |
US9734982B1 (en) * | 2016-05-24 | 2017-08-15 | Nissin Ion Equipment Co., Ltd. | Beam current density distribution adjustment device and ion implanter |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0283519B1 (en) * | 1986-09-29 | 1994-04-13 | Nippon Telegraph And Telephone Corporation | Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source |
EP0477906B1 (en) * | 1990-09-28 | 1996-12-11 | Hitachi, Ltd. | Plasma processing apparatus using plasma produced by microwaves |
WO2000007030A1 (en) * | 1998-07-28 | 2000-02-10 | Varian Semiconductor Equipment Associates, Inc. | Particle beam current monitoring technique |
EP1189493A2 (en) * | 1997-05-22 | 2002-03-20 | Canon Kabushiki Kaisha | Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method |
EP0764969B1 (en) * | 1995-09-21 | 2002-12-04 | Canon Kabushiki Kaisha | Microwave plasma processing apparatus and microwave plasma processing method |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4383177A (en) | 1980-12-24 | 1983-05-10 | International Business Machines Corporation | Multipole implantation-isotope separation ion beam source |
US5433788A (en) | 1987-01-19 | 1995-07-18 | Hitachi, Ltd. | Apparatus for plasma treatment using electron cyclotron resonance |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
US5203960A (en) * | 1989-03-09 | 1993-04-20 | Applied Microwave Plasma Concepts, Inc. | Method of operation of electron cyclotron resonance plasma source |
US5370765A (en) | 1989-03-09 | 1994-12-06 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source and method of operation |
US5032202A (en) * | 1989-10-03 | 1991-07-16 | Martin Marietta Energy Systems, Inc. | Plasma generating apparatus for large area plasma processing |
US5081398A (en) * | 1989-10-20 | 1992-01-14 | Board Of Trustees Operating Michigan State University | Resonant radio frequency wave coupler apparatus using higher modes |
US5206516A (en) | 1991-04-29 | 1993-04-27 | International Business Machines Corporation | Low energy, steered ion beam deposition system having high current at low pressure |
US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
FR2718568B1 (fr) * | 1994-04-06 | 1996-07-05 | France Telecom | Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants. |
JP3123735B2 (ja) * | 1995-04-28 | 2001-01-15 | 株式会社日立製作所 | イオンビーム処理装置 |
US5554857A (en) | 1995-10-19 | 1996-09-10 | Eaton Corporation | Method and apparatus for ion beam formation in an ion implanter |
US5686796A (en) * | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
JPH09180662A (ja) | 1995-12-27 | 1997-07-11 | Hitachi Ltd | イオンビーム装置 |
US5811823A (en) * | 1996-02-16 | 1998-09-22 | Eaton Corporation | Control mechanisms for dosimetry control in ion implantation systems |
US5707452A (en) * | 1996-07-08 | 1998-01-13 | Applied Microwave Plasma Concepts, Inc. | Coaxial microwave applicator for an electron cyclotron resonance plasma source |
US5975014A (en) * | 1996-07-08 | 1999-11-02 | Asm Japan K.K. | Coaxial resonant multi-port microwave applicator for an ECR plasma source |
US5703375A (en) | 1996-08-02 | 1997-12-30 | Eaton Corporation | Method and apparatus for ion beam neutralization |
GB9710380D0 (en) * | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
US6130436A (en) * | 1998-06-02 | 2000-10-10 | Varian Semiconductor Equipment Associates, Inc. | Acceleration and analysis architecture for ion implanter |
US6414329B1 (en) * | 2000-07-25 | 2002-07-02 | Axcelis Technologies, Inc. | Method and system for microwave excitation of plasma in an ion beam guide |
-
2000
- 2000-07-25 US US09/625,718 patent/US6541781B1/en not_active Expired - Lifetime
-
2001
- 2001-07-09 TW TW090116712A patent/TW527617B/zh not_active IP Right Cessation
- 2001-07-13 DE DE60134091T patent/DE60134091D1/de not_active Expired - Fee Related
- 2001-07-13 EP EP01306054A patent/EP1176623B1/en not_active Expired - Lifetime
- 2001-07-24 JP JP2001223304A patent/JP4947402B2/ja not_active Expired - Fee Related
- 2001-07-25 SG SG200104510A patent/SG106056A1/en unknown
- 2001-07-25 KR KR1020010044819A patent/KR100602319B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0283519B1 (en) * | 1986-09-29 | 1994-04-13 | Nippon Telegraph And Telephone Corporation | Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source |
EP0477906B1 (en) * | 1990-09-28 | 1996-12-11 | Hitachi, Ltd. | Plasma processing apparatus using plasma produced by microwaves |
EP0764969B1 (en) * | 1995-09-21 | 2002-12-04 | Canon Kabushiki Kaisha | Microwave plasma processing apparatus and microwave plasma processing method |
EP1189493A2 (en) * | 1997-05-22 | 2002-03-20 | Canon Kabushiki Kaisha | Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method |
WO2000007030A1 (en) * | 1998-07-28 | 2000-02-10 | Varian Semiconductor Equipment Associates, Inc. | Particle beam current monitoring technique |
Also Published As
Publication number | Publication date |
---|---|
DE60134091D1 (de) | 2008-07-03 |
JP2002110080A (ja) | 2002-04-12 |
EP1176623A3 (en) | 2005-06-15 |
US6541781B1 (en) | 2003-04-01 |
JP4947402B2 (ja) | 2012-06-06 |
EP1176623B1 (en) | 2008-05-21 |
KR100602319B1 (ko) | 2006-07-14 |
KR20020009504A (ko) | 2002-02-01 |
TW527617B (en) | 2003-04-11 |
EP1176623A2 (en) | 2002-01-30 |
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