SG105575A1 - System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position - Google Patents

System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position

Info

Publication number
SG105575A1
SG105575A1 SG200302345A SG200302345A SG105575A1 SG 105575 A1 SG105575 A1 SG 105575A1 SG 200302345 A SG200302345 A SG 200302345A SG 200302345 A SG200302345 A SG 200302345A SG 105575 A1 SG105575 A1 SG 105575A1
Authority
SG
Singapore
Prior art keywords
illuminator
varying
light
function
angular distribution
Prior art date
Application number
SG200302345A
Other languages
English (en)
Inventor
D Coston Scott
G Tsacoyeanes James
Original Assignee
Asml Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Us Inc filed Critical Asml Us Inc
Publication of SG105575A1 publication Critical patent/SG105575A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200302345A 2002-04-23 2003-04-23 System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position SG105575A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/127,505 US6888615B2 (en) 2002-04-23 2002-04-23 System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position

Publications (1)

Publication Number Publication Date
SG105575A1 true SG105575A1 (en) 2004-08-27

Family

ID=28790941

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200302345A SG105575A1 (en) 2002-04-23 2003-04-23 System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position

Country Status (7)

Country Link
US (1) US6888615B2 (ko)
EP (1) EP1357430A3 (ko)
JP (1) JP2003338459A (ko)
KR (1) KR100733547B1 (ko)
CN (1) CN1288505C (ko)
SG (1) SG105575A1 (ko)
TW (1) TWI278725B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
US7206652B2 (en) * 2004-08-20 2007-04-17 International Business Machines Corporation Method and system for intelligent automated reticle management
CN100353508C (zh) * 2004-12-08 2007-12-05 上海华虹Nec电子有限公司 一种精确控制铝线宽的方法
KR101134174B1 (ko) * 2005-03-15 2012-04-09 칼 짜이스 에스엠티 게엠베하 투사 노광 방법 및 이를 위한 투사 노광 시스템
KR100780863B1 (ko) 2005-06-29 2007-11-29 삼성전자주식회사 노광 장치 및 방법, 그리고 이에 사용되는 마스크 스테이지
US7525645B2 (en) * 2005-06-29 2009-04-28 Samsung Electronics Co., Ltd. Exposure apparatus and method, and mask stage therefor
WO2007018464A2 (en) * 2005-08-08 2007-02-15 Micronic Laser Systems Ab Method and apparatus for projection printing
US7934172B2 (en) 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
US7382438B2 (en) * 2005-08-23 2008-06-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070109520A1 (en) * 2005-11-17 2007-05-17 Whitney Theodore R Modular illuminator for a scanning printer
US10761430B2 (en) * 2018-09-13 2020-09-01 Applied Materials, Inc. Method to enhance the resolution of maskless lithography while maintaining a high image contrast

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726740A (en) * 1992-03-31 1998-03-10 Canon Kabushiki Kaisha Projection exposure apparatus having illumination device with ring-like or spot-like light source
US6072852A (en) * 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
EP1168083A2 (en) * 2000-06-22 2002-01-02 Svg Lithography Systems, Inc. Line width compensation using spatial variations in partial coherence

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPS6461716A (en) 1987-08-31 1989-03-08 Canon Kk Illuminator
JPH05217855A (ja) 1992-02-01 1993-08-27 Nikon Corp 露光用照明装置
US5329336A (en) 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JP2917704B2 (ja) 1992-10-01 1999-07-12 日本電気株式会社 露光装置
US5724122A (en) * 1995-05-24 1998-03-03 Svg Lithography Systems, Inc. Illumination system having spatially separate vertical and horizontal image planes for use in photolithography
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
US5966202A (en) 1997-03-31 1999-10-12 Svg Lithography Systems, Inc. Adjustable slit
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP3101613B2 (ja) * 1998-01-30 2000-10-23 キヤノン株式会社 照明光学装置及び投影露光装置
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6541750B1 (en) * 1999-03-17 2003-04-01 Rochester Institute Of Technology Modification of a projection imaging system with a non-circular aperture and a method thereof
JP2001319871A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光方法、濃度フィルタの製造方法、及び露光装置
JP4545874B2 (ja) * 2000-04-03 2010-09-15 キヤノン株式会社 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法
JP2002043214A (ja) 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
JP4646367B2 (ja) * 2000-08-25 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US6573975B2 (en) 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726740A (en) * 1992-03-31 1998-03-10 Canon Kabushiki Kaisha Projection exposure apparatus having illumination device with ring-like or spot-like light source
US6072852A (en) * 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
EP1168083A2 (en) * 2000-06-22 2002-01-02 Svg Lithography Systems, Inc. Line width compensation using spatial variations in partial coherence

Also Published As

Publication number Publication date
KR20030084658A (ko) 2003-11-01
CN1288505C (zh) 2006-12-06
EP1357430A2 (en) 2003-10-29
US20030197842A1 (en) 2003-10-23
JP2003338459A (ja) 2003-11-28
US6888615B2 (en) 2005-05-03
EP1357430A3 (en) 2005-09-07
TW200306466A (en) 2003-11-16
CN1453644A (zh) 2003-11-05
KR100733547B1 (ko) 2007-06-28
TWI278725B (en) 2007-04-11

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