SG10202111017VA - Wafer based corrosion & time dependent chemical effects - Google Patents

Wafer based corrosion & time dependent chemical effects

Info

Publication number
SG10202111017VA
SG10202111017VA SG10202111017VA SG10202111017VA SG10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA
Authority
SG
Singapore
Prior art keywords
time dependent
wafer based
chemical effects
based corrosion
dependent chemical
Prior art date
Application number
SG10202111017VA
Other languages
English (en)
Inventor
Leonard Tedeschi
Daniel Mccormick
Adauto Diaz
Benjamin Schwarz
Ping Hsieh
Changhun Lee
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10202111017VA publication Critical patent/SG10202111017VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Drying Of Semiconductors (AREA)
  • Peptides Or Proteins (AREA)
SG10202111017VA 2017-04-05 2018-03-28 Wafer based corrosion & time dependent chemical effects SG10202111017VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/480,337 US10515862B2 (en) 2017-04-05 2017-04-05 Wafer based corrosion and time dependent chemical effects

Publications (1)

Publication Number Publication Date
SG10202111017VA true SG10202111017VA (en) 2021-11-29

Family

ID=63711720

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10202111017VA SG10202111017VA (en) 2017-04-05 2018-03-28 Wafer based corrosion & time dependent chemical effects
SG11201909174Y SG11201909174YA (en) 2017-04-05 2018-03-28 Wafer based corrosion & time dependent chemical effects

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201909174Y SG11201909174YA (en) 2017-04-05 2018-03-28 Wafer based corrosion & time dependent chemical effects

Country Status (7)

Country Link
US (2) US10515862B2 (zh)
JP (1) JP7005653B2 (zh)
KR (1) KR102381957B1 (zh)
CN (1) CN110574148B (zh)
SG (2) SG10202111017VA (zh)
TW (1) TWI723257B (zh)
WO (1) WO2018187125A1 (zh)

Family Cites Families (26)

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US4723908A (en) * 1985-05-01 1988-02-09 Kranbuehl David E Dielectric probe; method and apparatus including its use
US5440238A (en) 1991-11-07 1995-08-08 Sandia Corporation Surface property detection apparatus and method
JP3533675B2 (ja) * 1993-07-26 2004-05-31 ソニー株式会社 半導体装置の製造方法
US5559428A (en) * 1995-04-10 1996-09-24 International Business Machines Corporation In-situ monitoring of the change in thickness of films
JP3039911B2 (ja) * 1995-06-13 2000-05-08 高砂熱学工業株式会社 基板表面の有機物汚染の評価装置および方法
JP3473218B2 (ja) 1995-10-24 2003-12-02 日産自動車株式会社 半導体集積回路
US20020015146A1 (en) 1997-09-22 2002-02-07 Meeks Steven W. Combined high speed optical profilometer and ellipsometer
JPH11307604A (ja) 1998-04-17 1999-11-05 Toshiba Corp プロセスモニタ方法及びプロセス装置
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
US6936835B2 (en) 2000-09-21 2005-08-30 Hitachi, Ltd. Method and its apparatus for inspecting particles or defects of a semiconductor device
US6911828B1 (en) 2001-05-23 2005-06-28 Southwest Research Institute Apparatus and method for detecting the degradation of a coating using embedded sensors
US6624642B1 (en) 2001-12-10 2003-09-23 Advanced Micro Devices, Inc. Metal bridging monitor for etch and CMP endpoint detection
US7325180B2 (en) * 2003-11-26 2008-01-29 Carnegie Mellon University System and method to test integrated circuits on a wafer
US20060062897A1 (en) 2004-09-17 2006-03-23 Applied Materials, Inc Patterned wafer thickness detection system
US20060102197A1 (en) * 2004-11-16 2006-05-18 Kang-Lie Chiang Post-etch treatment to remove residues
US7932726B1 (en) * 2005-08-16 2011-04-26 Environmental Metrology Corporation Method of design optimization and monitoring the clean/rinse/dry processes of patterned wafers using an electro-chemical residue sensor (ECRS)
JP4448082B2 (ja) * 2005-10-31 2010-04-07 大日本スクリーン製造株式会社 基板処理装置
DE102008049774B4 (de) * 2008-09-30 2017-07-27 Advanced Micro Devices, Inc. Prozessanlage und Verfahren zur prozessinternen Überwachung der Metallkontamination während der Bearbeitung von Mikrostrukturen
US8111390B2 (en) * 2009-04-17 2012-02-07 Applied Materials, Inc. Method and apparatus for residue detection in the edge deleted area of a substrate
US20120187974A1 (en) * 2011-01-20 2012-07-26 International Business Machines Corporation Dual Stage Voltage Ramp Stress Test for Gate Dielectrics
US20120276817A1 (en) 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal residue or metal pillars
JP2014116507A (ja) * 2012-12-11 2014-06-26 Renesas Electronics Corp 半導体装置の検査方法および半導体装置
US8963216B2 (en) * 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9991176B2 (en) * 2014-09-29 2018-06-05 Rudolph Technologies, Inc. Non-destructive acoustic metrology for void detection
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102378342B1 (ko) * 2015-06-24 2022-03-25 인텔 코포레이션 고품질 계면을 위한 대체 채널 에칭

Also Published As

Publication number Publication date
US20180294200A1 (en) 2018-10-11
US20200118896A1 (en) 2020-04-16
JP7005653B2 (ja) 2022-01-21
US10515862B2 (en) 2019-12-24
SG11201909174YA (en) 2019-10-30
WO2018187125A1 (en) 2018-10-11
TW201842602A (zh) 2018-12-01
JP2020517095A (ja) 2020-06-11
US11088000B2 (en) 2021-08-10
KR20190126937A (ko) 2019-11-12
TWI723257B (zh) 2021-04-01
CN110574148A (zh) 2019-12-13
KR102381957B1 (ko) 2022-03-31
CN110574148B (zh) 2023-05-23

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