SG10202111017VA - Wafer based corrosion & time dependent chemical effects - Google Patents
Wafer based corrosion & time dependent chemical effectsInfo
- Publication number
- SG10202111017VA SG10202111017VA SG10202111017VA SG10202111017VA SG10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA SG 10202111017V A SG10202111017V A SG 10202111017VA
- Authority
- SG
- Singapore
- Prior art keywords
- time dependent
- wafer based
- chemical effects
- based corrosion
- dependent chemical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
- Peptides Or Proteins (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/480,337 US10515862B2 (en) | 2017-04-05 | 2017-04-05 | Wafer based corrosion and time dependent chemical effects |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202111017VA true SG10202111017VA (en) | 2021-11-29 |
Family
ID=63711720
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201909174Y SG11201909174YA (en) | 2017-04-05 | 2018-03-28 | Wafer based corrosion & time dependent chemical effects |
SG10202111017VA SG10202111017VA (en) | 2017-04-05 | 2018-03-28 | Wafer based corrosion & time dependent chemical effects |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201909174Y SG11201909174YA (en) | 2017-04-05 | 2018-03-28 | Wafer based corrosion & time dependent chemical effects |
Country Status (7)
Country | Link |
---|---|
US (2) | US10515862B2 (en) |
JP (1) | JP7005653B2 (en) |
KR (1) | KR102381957B1 (en) |
CN (1) | CN110574148B (en) |
SG (2) | SG11201909174YA (en) |
TW (1) | TWI723257B (en) |
WO (1) | WO2018187125A1 (en) |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723908A (en) * | 1985-05-01 | 1988-02-09 | Kranbuehl David E | Dielectric probe; method and apparatus including its use |
US5440238A (en) | 1991-11-07 | 1995-08-08 | Sandia Corporation | Surface property detection apparatus and method |
JP3533675B2 (en) * | 1993-07-26 | 2004-05-31 | ソニー株式会社 | Method for manufacturing semiconductor device |
US5559428A (en) * | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
JP3039911B2 (en) * | 1995-06-13 | 2000-05-08 | 高砂熱学工業株式会社 | Apparatus and method for evaluating organic contamination on substrate surface |
JP3473218B2 (en) | 1995-10-24 | 2003-12-02 | 日産自動車株式会社 | Semiconductor integrated circuit |
US20020015146A1 (en) | 1997-09-22 | 2002-02-07 | Meeks Steven W. | Combined high speed optical profilometer and ellipsometer |
JPH11307604A (en) | 1998-04-17 | 1999-11-05 | Toshiba Corp | Process monitoring method and device |
US6440864B1 (en) * | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
US6936835B2 (en) | 2000-09-21 | 2005-08-30 | Hitachi, Ltd. | Method and its apparatus for inspecting particles or defects of a semiconductor device |
US6911828B1 (en) | 2001-05-23 | 2005-06-28 | Southwest Research Institute | Apparatus and method for detecting the degradation of a coating using embedded sensors |
US6624642B1 (en) | 2001-12-10 | 2003-09-23 | Advanced Micro Devices, Inc. | Metal bridging monitor for etch and CMP endpoint detection |
US7325180B2 (en) * | 2003-11-26 | 2008-01-29 | Carnegie Mellon University | System and method to test integrated circuits on a wafer |
US20060062897A1 (en) | 2004-09-17 | 2006-03-23 | Applied Materials, Inc | Patterned wafer thickness detection system |
US20060102197A1 (en) * | 2004-11-16 | 2006-05-18 | Kang-Lie Chiang | Post-etch treatment to remove residues |
US7932726B1 (en) | 2005-08-16 | 2011-04-26 | Environmental Metrology Corporation | Method of design optimization and monitoring the clean/rinse/dry processes of patterned wafers using an electro-chemical residue sensor (ECRS) |
JP4448082B2 (en) * | 2005-10-31 | 2010-04-07 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
DE102008049774B4 (en) * | 2008-09-30 | 2017-07-27 | Advanced Micro Devices, Inc. | Process plant and method for in-process monitoring of metal contamination during processing of microstructures |
US8111390B2 (en) * | 2009-04-17 | 2012-02-07 | Applied Materials, Inc. | Method and apparatus for residue detection in the edge deleted area of a substrate |
US20120187974A1 (en) * | 2011-01-20 | 2012-07-26 | International Business Machines Corporation | Dual Stage Voltage Ramp Stress Test for Gate Dielectrics |
US20120276817A1 (en) | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal residue or metal pillars |
JP2014116507A (en) | 2012-12-11 | 2014-06-26 | Renesas Electronics Corp | Method of inspecting semiconductor device and semiconductor device |
US8963216B2 (en) * | 2013-03-13 | 2015-02-24 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
US9991176B2 (en) * | 2014-09-29 | 2018-06-05 | Rudolph Technologies, Inc. | Non-destructive acoustic metrology for void detection |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
EP3314644B1 (en) * | 2015-06-24 | 2023-12-20 | Intel Corporation | Replacement channel etch for high quality interface |
-
2017
- 2017-04-05 US US15/480,337 patent/US10515862B2/en active Active
-
2018
- 2018-03-28 SG SG11201909174Y patent/SG11201909174YA/en unknown
- 2018-03-28 SG SG10202111017VA patent/SG10202111017VA/en unknown
- 2018-03-28 JP JP2019554628A patent/JP7005653B2/en active Active
- 2018-03-28 WO PCT/US2018/024964 patent/WO2018187125A1/en active Application Filing
- 2018-03-28 CN CN201880027813.6A patent/CN110574148B/en active Active
- 2018-03-28 KR KR1020197032413A patent/KR102381957B1/en active IP Right Grant
- 2018-04-03 TW TW107111834A patent/TWI723257B/en active
-
2019
- 2019-12-10 US US16/709,684 patent/US11088000B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10515862B2 (en) | 2019-12-24 |
KR102381957B1 (en) | 2022-03-31 |
JP2020517095A (en) | 2020-06-11 |
US20200118896A1 (en) | 2020-04-16 |
TWI723257B (en) | 2021-04-01 |
US20180294200A1 (en) | 2018-10-11 |
WO2018187125A1 (en) | 2018-10-11 |
TW201842602A (en) | 2018-12-01 |
US11088000B2 (en) | 2021-08-10 |
KR20190126937A (en) | 2019-11-12 |
SG11201909174YA (en) | 2019-10-30 |
CN110574148A (en) | 2019-12-13 |
CN110574148B (en) | 2023-05-23 |
JP7005653B2 (en) | 2022-01-21 |
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