SG10202101446XA - Polishing composition, polishing method, and method of producing semiconductor substrate - Google Patents
Polishing composition, polishing method, and method of producing semiconductor substrateInfo
- Publication number
- SG10202101446XA SG10202101446XA SG10202101446XA SG10202101446XA SG10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- semiconductor substrate
- producing semiconductor
- polishing composition
- composition
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000005498 polishing Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020025618A JP7409899B2 (ja) | 2020-02-18 | 2020-02-18 | 研磨用組成物、研磨方法、および半導体基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202101446XA true SG10202101446XA (en) | 2021-09-29 |
Family
ID=77273444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202101446XA SG10202101446XA (en) | 2020-02-18 | 2021-02-11 | Polishing composition, polishing method, and method of producing semiconductor substrate |
Country Status (4)
Country | Link |
---|---|
US (1) | US11718768B2 (ja) |
JP (1) | JP7409899B2 (ja) |
SG (1) | SG10202101446XA (ja) |
TW (1) | TW202132493A (ja) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002170790A (ja) | 2000-11-30 | 2002-06-14 | Showa Denko Kk | 半導体基板研磨用組成物、半導体配線基板およびその製造方法 |
US6740589B2 (en) * | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
JP4749775B2 (ja) | 2005-06-23 | 2011-08-17 | 山口精研工業株式会社 | ウェーハ研磨液組成物及びウェーハ研磨方法 |
JP5026710B2 (ja) | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2007103515A (ja) | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
MY149975A (en) * | 2007-09-21 | 2013-11-15 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
US20130045599A1 (en) | 2011-08-15 | 2013-02-21 | Rohm and Electronic Materials CMP Holdings, Inc. | Method for chemical mechanical polishing copper |
SG11201700255UA (en) * | 2014-07-15 | 2017-02-27 | Basf Se | A chemical mechanical polishing (cmp) composition |
US20160053381A1 (en) * | 2014-08-22 | 2016-02-25 | Cabot Microelectronics Corporation | Germanium chemical mechanical polishing |
US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
JP6905836B2 (ja) | 2017-03-02 | 2021-07-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨用組成物の製造方法 |
JP7250530B2 (ja) | 2018-03-15 | 2023-04-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法、および半導体基板の製造方法 |
-
2020
- 2020-02-18 JP JP2020025618A patent/JP7409899B2/ja active Active
-
2021
- 2021-02-04 TW TW110104223A patent/TW202132493A/zh unknown
- 2021-02-09 US US17/171,393 patent/US11718768B2/en active Active
- 2021-02-11 SG SG10202101446XA patent/SG10202101446XA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20210253905A1 (en) | 2021-08-19 |
TW202132493A (zh) | 2021-09-01 |
US11718768B2 (en) | 2023-08-08 |
JP7409899B2 (ja) | 2024-01-09 |
JP2021132076A (ja) | 2021-09-09 |
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