SG10202101446XA - Polishing composition, polishing method, and method of producing semiconductor substrate - Google Patents

Polishing composition, polishing method, and method of producing semiconductor substrate

Info

Publication number
SG10202101446XA
SG10202101446XA SG10202101446XA SG10202101446XA SG10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA SG 10202101446X A SG10202101446X A SG 10202101446XA
Authority
SG
Singapore
Prior art keywords
polishing
semiconductor substrate
producing semiconductor
polishing composition
composition
Prior art date
Application number
SG10202101446XA
Other languages
English (en)
Inventor
Ito Daiki
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG10202101446XA publication Critical patent/SG10202101446XA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10202101446XA 2020-02-18 2021-02-11 Polishing composition, polishing method, and method of producing semiconductor substrate SG10202101446XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020025618A JP7409899B2 (ja) 2020-02-18 2020-02-18 研磨用組成物、研磨方法、および半導体基板の製造方法

Publications (1)

Publication Number Publication Date
SG10202101446XA true SG10202101446XA (en) 2021-09-29

Family

ID=77273444

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202101446XA SG10202101446XA (en) 2020-02-18 2021-02-11 Polishing composition, polishing method, and method of producing semiconductor substrate

Country Status (4)

Country Link
US (1) US11718768B2 (ja)
JP (1) JP7409899B2 (ja)
SG (1) SG10202101446XA (ja)
TW (1) TW202132493A (ja)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002170790A (ja) 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
JP4749775B2 (ja) 2005-06-23 2011-08-17 山口精研工業株式会社 ウェーハ研磨液組成物及びウェーハ研磨方法
JP5026710B2 (ja) 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP2007103515A (ja) 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
MY149975A (en) * 2007-09-21 2013-11-15 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
US20130045599A1 (en) 2011-08-15 2013-02-21 Rohm and Electronic Materials CMP Holdings, Inc. Method for chemical mechanical polishing copper
SG11201700255UA (en) * 2014-07-15 2017-02-27 Basf Se A chemical mechanical polishing (cmp) composition
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
JP6905836B2 (ja) 2017-03-02 2021-07-21 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨用組成物の製造方法
JP7250530B2 (ja) 2018-03-15 2023-04-03 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、および半導体基板の製造方法

Also Published As

Publication number Publication date
US20210253905A1 (en) 2021-08-19
TW202132493A (zh) 2021-09-01
US11718768B2 (en) 2023-08-08
JP7409899B2 (ja) 2024-01-09
JP2021132076A (ja) 2021-09-09

Similar Documents

Publication Publication Date Title
EP4130224A4 (en) METHOD FOR CLEANING A SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING A PROCESSED SEMICONDUCTOR SUBSTRATE, AND PEELING COMPOSITION
SG11202105574YA (en) Adhesive agent composition, layered product and production method for layered product, and method for reducing thickness of semiconductor forming substrate
SG10202009397WA (en) Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
EP3886161A4 (en) SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD FOR PRODUCTION THEREOF
IL277045A (en) Preparations for protecting alumina from damage and processes for the production of semiconductor substrates using these preparations
EP3960913A4 (en) METHOD FOR MAKING A SEMICONDUCTOR SUBSTRATE, APPARATUS FOR MAKING THE SAME, AND METHOD FOR EPITAXIAL GROWTH
PL3940122T3 (pl) Sposób wytwarzania wafla SiC
SG10202101446XA (en) Polishing composition, polishing method, and method of producing semiconductor substrate
SG11202109726TA (en) Semiconductor wafer and method of manufacturing semiconductor apparatus
SG10202008582VA (en) Surface treatment composition, method for producing surface treatment composition, surface treatment method, and method for producing semiconductor substrate
EP3936645A4 (en) METHOD AND APPARATUS FOR MANUFACTURING A SIC SUBSTRATE, AND METHOD FOR REDUCING MACRO-LEVEL BUNTING IN A SIC SUBSTRATE
EP4131343A4 (en) POLISHING METHOD AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD
SG10202103098SA (en) Polishing composition, production method of the same, polishing method, and manufacturing method of semiconductor substrate
EP4131344A4 (en) SEMICONDUCTOR SUBSTRATE CLEANING METHOD, METHOD FOR PRODUCING A PROCESSED SEMICONDUCTOR SUBSTRATE, AND COMPOSITION FOR PEELING
TWI800213B (zh) 半導體封裝及其製造方法
EP4130222A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE, AND RELEASE COMPOSITION
EP4117391A4 (en) SUBSTRATE TREATMENT APPARATUS, MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT METHOD AND PROGRAM
EP3799110A4 (en) GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCTION THEREOF
KR102325905B9 (ko) 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
EP4050132A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE
EP3923316A4 (en) NEW METHOD FOR FORMING A SILICON OR SILICON COMPOUND PATTERN IN A SEMICONDUCTOR FABRICATION METHOD
EP4130217A4 (en) CLEANING AGENT COMPOSITION AND METHOD FOR PRODUCING A PROCESSED SEMICONDUCTOR SUBSTRATE
EP4130221A4 (en) METHOD FOR CLEANING A SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING A PROCESSED SEMICONDUCTOR SUBSTRATE, AND STRIPPING COMPOSITION
EP4130220A4 (en) METHOD FOR CLEANING A SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING A PROCESSED SEMICONDUCTOR SUBSTRATE, AND PICKLING COMPOSITION
TWI799968B (zh) 半導體元件的製備方法