TWI800213B - 半導體封裝及其製造方法 - Google Patents
半導體封裝及其製造方法 Download PDFInfo
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- TWI800213B TWI800213B TW111101356A TW111101356A TWI800213B TW I800213 B TWI800213 B TW I800213B TW 111101356 A TW111101356 A TW 111101356A TW 111101356 A TW111101356 A TW 111101356A TW I800213 B TWI800213 B TW I800213B
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- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
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- H01L2924/11—Device type
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1434—Memory
-
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/181—Encapsulation
- H01L2924/1811—Structure
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- H01L2924/181—Encapsulation
- H01L2924/182—Disposition
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/186—Material
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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Applications Claiming Priority (4)
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US202163166350P | 2021-03-26 | 2021-03-26 | |
US63/166,350 | 2021-03-26 | ||
US17/391,258 | 2021-08-02 | ||
US17/391,258 US11842946B2 (en) | 2021-03-26 | 2021-08-02 | Semiconductor package having an encapsulant comprising conductive fillers and method of manufacture |
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Country Status (5)
Country | Link |
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US (2) | US11842946B2 (zh) |
KR (1) | KR102670221B1 (zh) |
CN (1) | CN114843230A (zh) |
DE (1) | DE102021120389A1 (zh) |
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Families Citing this family (2)
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US11842946B2 (en) * | 2021-03-26 | 2023-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package having an encapsulant comprising conductive fillers and method of manufacture |
US12100634B2 (en) * | 2021-10-13 | 2024-09-24 | Nanya Technology Corporation | Semiconductor device with re-fill layer |
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-
2021
- 2021-08-02 US US17/391,258 patent/US11842946B2/en active Active
- 2021-08-05 DE DE102021120389.9A patent/DE102021120389A1/de active Pending
-
2022
- 2022-01-12 TW TW111101356A patent/TWI800213B/zh active
- 2022-02-17 KR KR1020220020917A patent/KR102670221B1/ko active IP Right Grant
- 2022-03-22 CN CN202210281518.1A patent/CN114843230A/zh active Pending
-
2023
- 2023-11-01 US US18/499,964 patent/US20240071865A1/en active Pending
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Also Published As
Publication number | Publication date |
---|---|
US11842946B2 (en) | 2023-12-12 |
KR20220134432A (ko) | 2022-10-05 |
KR102670221B1 (ko) | 2024-05-28 |
TW202238890A (zh) | 2022-10-01 |
DE102021120389A1 (de) | 2022-09-29 |
US20240071865A1 (en) | 2024-02-29 |
CN114843230A (zh) | 2022-08-02 |
US20220310480A1 (en) | 2022-09-29 |
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