SG10202008650UA - Processing method of wafer - Google Patents
Processing method of waferInfo
- Publication number
- SG10202008650UA SG10202008650UA SG10202008650UA SG10202008650UA SG10202008650UA SG 10202008650U A SG10202008650U A SG 10202008650UA SG 10202008650U A SG10202008650U A SG 10202008650UA SG 10202008650U A SG10202008650U A SG 10202008650UA SG 10202008650U A SG10202008650U A SG 10202008650UA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- processing method
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019166093A JP7292803B2 (ja) | 2019-09-12 | 2019-09-12 | ウェーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202008650UA true SG10202008650UA (en) | 2021-04-29 |
Family
ID=74686817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202008650UA SG10202008650UA (en) | 2019-09-12 | 2020-09-05 | Processing method of wafer |
Country Status (7)
Country | Link |
---|---|
US (1) | US11456213B2 (de) |
JP (1) | JP7292803B2 (de) |
KR (1) | KR20210031604A (de) |
CN (1) | CN112490190A (de) |
DE (1) | DE102020211446A1 (de) |
SG (1) | SG10202008650UA (de) |
TW (1) | TW202111793A (de) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173987A (ja) | 2001-12-04 | 2003-06-20 | Disco Abrasive Syst Ltd | 半導体チップの製造方法 |
JP4198966B2 (ja) * | 2002-10-17 | 2008-12-17 | 株式会社東芝 | 半導体装置の製造方法 |
US7682937B2 (en) * | 2005-11-25 | 2010-03-23 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
JP2008071907A (ja) * | 2006-09-13 | 2008-03-27 | Toshiba Corp | 半導体チップの製造方法、及び半導体チップ |
KR20120023258A (ko) | 2010-09-01 | 2012-03-13 | 주식회사 이오테크닉스 | 웨이퍼 가공방법 및 웨이퍼 가공장치 |
JP5995428B2 (ja) * | 2011-11-11 | 2016-09-21 | 株式会社ディスコ | カバー付きチップの製造方法 |
JP6246534B2 (ja) * | 2013-09-11 | 2017-12-13 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017107921A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017163070A (ja) * | 2016-03-11 | 2017-09-14 | パナソニックIpマネジメント株式会社 | 素子チップおよびその製造方法 |
JP2017220602A (ja) * | 2016-06-09 | 2017-12-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2018014370A (ja) * | 2016-07-19 | 2018-01-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP2018156973A (ja) * | 2017-03-15 | 2018-10-04 | 株式会社ディスコ | ウェーハの加工方法 |
-
2019
- 2019-09-12 JP JP2019166093A patent/JP7292803B2/ja active Active
-
2020
- 2020-08-18 KR KR1020200102983A patent/KR20210031604A/ko unknown
- 2020-09-05 SG SG10202008650UA patent/SG10202008650UA/en unknown
- 2020-09-08 CN CN202010933777.9A patent/CN112490190A/zh active Pending
- 2020-09-09 TW TW109130897A patent/TW202111793A/zh unknown
- 2020-09-10 US US17/017,230 patent/US11456213B2/en active Active
- 2020-09-11 DE DE102020211446.3A patent/DE102020211446A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE102020211446A1 (de) | 2021-03-18 |
TW202111793A (zh) | 2021-03-16 |
CN112490190A (zh) | 2021-03-12 |
JP2021044422A (ja) | 2021-03-18 |
US11456213B2 (en) | 2022-09-27 |
US20210082763A1 (en) | 2021-03-18 |
KR20210031604A (ko) | 2021-03-22 |
JP7292803B2 (ja) | 2023-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10202109757WA (en) | Method of Processing a Wafer | |
SG10201905294RA (en) | Wafer processing method | |
SG10201904699RA (en) | Wafer processing method | |
SG10202006736YA (en) | Wafer processing method | |
SG10202000576QA (en) | Wafer processing method | |
SG10201905935VA (en) | Wafer processing method | |
SG10202004876YA (en) | Wafer processing method | |
SG10201912832SA (en) | Wafer processing method | |
SG10201909522RA (en) | Wafer processing method | |
SG10201906678TA (en) | Wafer processing method | |
SG10201905936RA (en) | Wafer processing method | |
SG10201904719TA (en) | Wafer processing method | |
SG10202010113YA (en) | Method of processing wafer | |
SG10202009952SA (en) | Wafer processing method | |
SG10202003482RA (en) | Wafer processing method | |
SG10202002647RA (en) | Wafer processing method | |
SG10201906896QA (en) | Wafer processing method | |
SG10201906897SA (en) | Wafer processing method | |
SG10201904710UA (en) | Wafer processing method | |
SG10202007432VA (en) | Processing method of wafer | |
SG10202010592VA (en) | Wafer processing method | |
SG10202009949PA (en) | Wafer processing method | |
SG10202009948YA (en) | Wafer processing method | |
SG10202009268SA (en) | Wafer processing method | |
SG10202008571TA (en) | Wafer processing method |