SG10201908807RA - Multi-layer raised frame in bulk acoustic wave device - Google Patents

Multi-layer raised frame in bulk acoustic wave device

Info

Publication number
SG10201908807RA
SG10201908807RA SG10201908807RA SG10201908807RA SG10201908807RA SG 10201908807R A SG10201908807R A SG 10201908807RA SG 10201908807R A SG10201908807R A SG 10201908807RA SG 10201908807R A SG10201908807R A SG 10201908807RA SG 10201908807R A SG10201908807R A SG 10201908807RA
Authority
SG
Singapore
Prior art keywords
acoustic wave
wave device
bulk acoustic
raised frame
layer raised
Prior art date
Application number
SG10201908807RA
Inventor
Kwang Jae Shin
Jiansong Liu
Original Assignee
Skyworks Global Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Global Pte Ltd filed Critical Skyworks Global Pte Ltd
Publication of SG10201908807RA publication Critical patent/SG10201908807RA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/3827—Portable transceivers

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Transceivers (AREA)
SG10201908807RA 2018-09-24 2019-09-23 Multi-layer raised frame in bulk acoustic wave device SG10201908807RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862735523P 2018-09-24 2018-09-24
US201862760470P 2018-11-13 2018-11-13

Publications (1)

Publication Number Publication Date
SG10201908807RA true SG10201908807RA (en) 2020-04-29

Family

ID=69885092

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908807RA SG10201908807RA (en) 2018-09-24 2019-09-23 Multi-layer raised frame in bulk acoustic wave device

Country Status (3)

Country Link
US (2) US11082023B2 (en)
JP (2) JP2020053966A (en)
SG (1) SG10201908807RA (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200030478A (en) 2018-09-12 2020-03-20 스카이워크스 글로벌 피티이. 엘티디. Recess frame structure for a bulk acoustic wave resonator
US11082023B2 (en) 2018-09-24 2021-08-03 Skyworks Global Pte. Ltd. Multi-layer raised frame in bulk acoustic wave device
US11088672B2 (en) * 2019-01-19 2021-08-10 Qorvo Us, Inc. Bulk acoustic wave resonators with shaped border rings
US11601113B2 (en) 2019-05-24 2023-03-07 Skyworks Global Pte. Ltd. Bulk acoustic wave/film bulk acoustic wave resonator and filter for wide bandwidth applications
US11316494B2 (en) 2019-06-14 2022-04-26 Skyworks Global Pte. Ltd. Bulk acoustic wave device with floating raised frame
WO2021021719A1 (en) * 2019-07-31 2021-02-04 QXONIX Inc. Bulk acoustic wave (baw) resonator structures, devices and systems
DE102021209875A1 (en) * 2020-09-18 2022-03-24 Skyworks Global Pte. Ltd. VOLUME WAVE ACOUSTIC DEVICE WITH RAISED FRAME STRUCTURE
KR20220163883A (en) * 2021-06-03 2022-12-12 스카이워크스 글로벌 피티이. 엘티디. Radio frequency acoustic device with laterally distributed reflectors
US20240072761A1 (en) * 2022-08-30 2024-02-29 Qorvo Us, Inc. Baw resonator with dual-step oxide border ring structure

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI107660B (en) * 1999-07-19 2001-09-14 Nokia Mobile Phones Ltd resonator
US6548943B2 (en) 2001-04-12 2003-04-15 Nokia Mobile Phones Ltd. Method of producing thin-film bulk acoustic wave devices
US6476536B1 (en) 2001-04-27 2002-11-05 Nokia Corporation Method of tuning BAW resonators
US7280007B2 (en) 2004-11-15 2007-10-09 Avago Technologies General Ip (Singapore) Pte. Ltd. Thin film bulk acoustic resonator with a mass loaded perimeter
TWI365603B (en) 2004-10-01 2012-06-01 Avago Technologies Wireless Ip A thin film bulk acoustic resonator with a mass loaded perimeter
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
DE102004059965A1 (en) 2004-12-13 2006-06-14 Epcos Ag Thin-layer resonator for working with acoustic bulk waves has a piezoelectric layer with chemically etched side surfaces
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
KR100802109B1 (en) 2006-09-12 2008-02-11 삼성전자주식회사 Resonator, apparatus having the same and fabrication method of resonator
KR100916182B1 (en) 2007-11-28 2009-09-08 주식회사 엠에스솔루션 FBAR package and packaging method thereof
JP5279068B2 (en) * 2008-02-15 2013-09-04 太陽誘電株式会社 Piezoelectric thin film resonator, filter, communication module, and communication device
US7602102B1 (en) 2008-04-24 2009-10-13 Skyworks Solutions, Inc. Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
KR20110062583A (en) 2009-12-03 2011-06-10 주식회사 엠에스솔루션 Electrostatic switch for high frequency and method for manufacturing the same
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9991871B2 (en) * 2011-02-28 2018-06-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a ring
US9748918B2 (en) * 2013-02-14 2017-08-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising integrated structures for improved performance
US9525397B2 (en) * 2011-03-29 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic reflector, frame and collar
KR101192412B1 (en) 2011-04-08 2012-10-18 주식회사 멤스솔루션 Rf mems switch device and menufacturing method thereof
JP5143972B1 (en) * 2012-08-16 2013-02-13 太陽誘電株式会社 High frequency circuit module
JP2014135568A (en) 2013-01-08 2014-07-24 Chiba Univ Piezoelectric thin film resonator and filter
US9450565B2 (en) 2013-03-12 2016-09-20 Qorvo Us, Inc. Border ring mode suppression in solidly-mounted bulk acoustic wave resonator
US9853626B2 (en) * 2014-03-31 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
JP6441761B2 (en) * 2015-07-29 2018-12-19 太陽誘電株式会社 Piezoelectric thin film resonator and filter
JP6368298B2 (en) 2015-12-14 2018-08-01 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
JP6510987B2 (en) 2016-01-14 2019-05-08 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
JP6469601B2 (en) 2016-02-05 2019-02-13 太陽誘電株式会社 Piezoelectric thin film resonator, filter and duplexer
KR20170097348A (en) 2016-02-18 2017-08-28 삼성전기주식회사 Acoustic resonator and method of manufacturing the same
JP6556099B2 (en) 2016-06-16 2019-08-07 太陽誘電株式会社 Piezoelectric thin film resonator, filter and multiplexer
JP6556668B2 (en) * 2016-06-22 2019-08-07 太陽誘電株式会社 Filters and multiplexers
JP7036487B2 (en) 2016-07-07 2022-03-15 サムソン エレクトロ－メカニックス カンパニーリミテッド． SAW filter device and its manufacturing method
KR20180008242A (en) 2016-07-14 2018-01-24 삼성전기주식회사 Bulk Acoustic wave filter device
JP6556113B2 (en) 2016-12-21 2019-08-07 太陽誘電株式会社 Piezoelectric thin film resonator, filter and multiplexer
JP6556173B2 (en) * 2017-02-02 2019-08-07 太陽誘電株式会社 Piezoelectric thin film resonator, filter and multiplexer
US11228299B2 (en) 2017-02-02 2022-01-18 Taiyo Yuden Co., Ltd. Piezoelectric thin film resonator with insertion film, filter, and multiplexer
JP6903471B2 (en) 2017-04-07 2021-07-14 太陽誘電株式会社 Piezoelectric thin film resonators, filters and multiplexers
TW201941464A (en) * 2018-03-02 2019-10-16 美商天工方案公司 Lamb wave loop circuit for acoustic wave filter
US11082023B2 (en) 2018-09-24 2021-08-03 Skyworks Global Pte. Ltd. Multi-layer raised frame in bulk acoustic wave device
CN110635775B (en) 2019-09-10 2023-09-12 苏州汉天下电子有限公司 Resonator and method for manufacturing the same
US20210083643A1 (en) 2019-09-13 2021-03-18 Skyworks Solutions, Inc. Gradient raised frames in film bulk acoustic resonators
DE102021209875A1 (en) 2020-09-18 2022-03-24 Skyworks Global Pte. Ltd. VOLUME WAVE ACOUSTIC DEVICE WITH RAISED FRAME STRUCTURE

Also Published As

Publication number Publication date
US20200099359A1 (en) 2020-03-26
US20210344321A1 (en) 2021-11-04
US11082023B2 (en) 2021-08-03
US11967939B2 (en) 2024-04-23
JP2023179626A (en) 2023-12-19
JP2020053966A (en) 2020-04-02

Similar Documents

Publication Publication Date Title
SG10201908807RA (en) Multi-layer raised frame in bulk acoustic wave device
SG10201913568SA (en) Acoustic wave device with transverse mode suppression
SG10201911416RA (en) Acoustic Wave Device With Transverse Spurious Mode Suppression
HK1219377A1 (en) Electroacoustic transducer and electronic apparatus including the same
EP3836561C0 (en) Speaker unit and speaker device
GB2606666B (en) Acoustic wave device with multi-layer piezoelectric substrate
SG10201909039VA (en) Acoustic wave device with multi-layer interdigital transducer electrode
EP3815393A4 (en) Electronic device including acoustic module
IL274181A (en) Particles for use in acoustic standing wave processes
EP3642956A4 (en) Bulk acoustic wave filter
GB2576084B (en) Acoustic wave device with spinel layer
GB2542210B (en) Nonlinear acoustic echo cancellation based on transducer impedance
SG10202012058XA (en) Laterally Excited Bulk Wave Device With Acoustic Mirrors
EP4213494A4 (en) Acoustic device
SG11202110974YA (en) High-order mode surface acoustic wave device
SG11202101990TA (en) Packaged surface acoustic wave devices
GB2559135B (en) Transducer apparatus for an edge-blown aerophone and an edge-blown aerophone having the transducer apparatus
EP3883130A4 (en) Bulk acoustic wave resonator, filter, and electronic device
PT3324181T (en) Device for emitting torsional ultrasonic waves and transducer comprising said device
EP3101912A4 (en) Laminated ultrasonic vibration device and ultrasonic medical apparatus
EP3415097A4 (en) Acoustic wave image generation device and acoustic wave image generation method
GB2582562B (en) Ultrasonic device
EP3278738A4 (en) Acoustic wave image generation device and method
GB202214305D0 (en) Suspended frame bulk acoustic wave devices
SG10202012082VA (en) Laterally excited bulk wave device with acoustic mirror