SG10202012082VA - Laterally excited bulk wave device with acoustic mirror - Google Patents
Laterally excited bulk wave device with acoustic mirrorInfo
- Publication number
- SG10202012082VA SG10202012082VA SG10202012082VA SG10202012082VA SG10202012082VA SG 10202012082V A SG10202012082V A SG 10202012082VA SG 10202012082V A SG10202012082V A SG 10202012082VA SG 10202012082V A SG10202012082V A SG 10202012082VA SG 10202012082V A SG10202012082V A SG 10202012082VA
- Authority
- SG
- Singapore
- Prior art keywords
- wave device
- bulk wave
- acoustic mirror
- laterally excited
- excited bulk
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/589—Acoustic mirrors
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962943116P | 2019-12-03 | 2019-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202012082VA true SG10202012082VA (en) | 2021-07-29 |
Family
ID=76091264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202012082VA SG10202012082VA (en) | 2019-12-03 | 2020-12-03 | Laterally excited bulk wave device with acoustic mirror |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US11463065B2 (en) |
| SG (1) | SG10202012082VA (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201902753RA (en) * | 2018-04-12 | 2019-11-28 | Skyworks Solutions Inc | Filter Including Two Types Of Acoustic Wave Resonators |
| US11463065B2 (en) | 2019-12-03 | 2022-10-04 | Skyworks Solutions, Inc. | Laterally excited bulk wave device with acoustic mirror |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016100692A2 (en) | 2014-12-17 | 2016-06-23 | Rf Micro Devices, Inc. | Plate wave devices with wave confinement structures and fabrication methods |
| KR101923573B1 (en) * | 2015-03-16 | 2018-11-29 | 가부시키가이샤 무라타 세이사쿠쇼 | Seismic wave device and manufacturing method thereof |
| JP6509147B2 (en) * | 2016-02-29 | 2019-05-08 | 太陽誘電株式会社 | Electronic device |
| US10784833B2 (en) * | 2017-04-04 | 2020-09-22 | Vanguard International Semiconductor Singapore Pte. Ltd. | Lamb acoustic wave resonator and filter with self-aligned cavity via |
| US10601392B2 (en) * | 2018-06-15 | 2020-03-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator |
| TWI834694B (en) * | 2018-07-18 | 2024-03-11 | 美商天工方案公司 | Fbar filter with integrated cancelation circuit |
| US10630256B2 (en) * | 2018-09-07 | 2020-04-21 | Vtt Technical Research Centre Of Finland Ltd | Two-stage lateral bulk acoustic wave filter |
| US20210119602A1 (en) * | 2019-10-18 | 2021-04-22 | Board Of Trustees Of The University Of Illinois | Low-loss and wide-band acoustic delay lines using aluminum nitride thin films |
| US11463065B2 (en) | 2019-12-03 | 2022-10-04 | Skyworks Solutions, Inc. | Laterally excited bulk wave device with acoustic mirror |
| US11552614B2 (en) | 2019-12-03 | 2023-01-10 | Skyworks Solutions, Inc. | Laterally excited bulk wave device with acoustic mirrors |
| US20220321096A1 (en) | 2021-03-31 | 2022-10-06 | Skyworks Solutions, Inc. | Longitudinally leaky surface acoustic wave device with double side acoustic mirror |
| US20230108686A1 (en) | 2021-10-05 | 2023-04-06 | Skyworks Solutions, Inc. | Stacked structure with multiple acoustic wave devices |
-
2020
- 2020-12-01 US US17/108,879 patent/US11463065B2/en active Active
- 2020-12-03 SG SG10202012082VA patent/SG10202012082VA/en unknown
-
2022
- 2022-09-20 US US17/933,786 patent/US12009797B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US12009797B2 (en) | 2024-06-11 |
| US20230121844A1 (en) | 2023-04-20 |
| US20210167753A1 (en) | 2021-06-03 |
| US11463065B2 (en) | 2022-10-04 |
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