SG10201906088YA - Low oxide trench dishing chemical mechanical polishing - Google Patents

Low oxide trench dishing chemical mechanical polishing

Info

Publication number
SG10201906088YA
SG10201906088YA SG10201906088YA SG10201906088YA SG10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA SG 10201906088Y A SG10201906088Y A SG 10201906088YA
Authority
SG
Singapore
Prior art keywords
mechanical polishing
chemical mechanical
oxide trench
low oxide
trench dishing
Prior art date
Application number
SG10201906088YA
Other languages
English (en)
Inventor
Shi Xiaobo
P Murella Krishna
D Rose Joseph
Zhou Hongjun
Leonard O'neill Mark
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201906088YA publication Critical patent/SG10201906088YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201906088YA 2018-06-29 2019-06-29 Low oxide trench dishing chemical mechanical polishing SG10201906088YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862692639P 2018-06-29 2018-06-29
US201862692633P 2018-06-29 2018-06-29
US16/450,753 US20200002607A1 (en) 2018-06-29 2019-06-24 Low Oxide Trench Dishing Chemical Mechanical Polishing

Publications (1)

Publication Number Publication Date
SG10201906088YA true SG10201906088YA (en) 2020-01-30

Family

ID=67137867

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201906088YA SG10201906088YA (en) 2018-06-29 2019-06-29 Low oxide trench dishing chemical mechanical polishing

Country Status (8)

Country Link
US (1) US20200002607A1 (enrdf_load_stackoverflow)
EP (1) EP3587524A1 (enrdf_load_stackoverflow)
JP (1) JP2020002357A (enrdf_load_stackoverflow)
KR (1) KR102794696B1 (enrdf_load_stackoverflow)
CN (1) CN110655869A (enrdf_load_stackoverflow)
IL (1) IL267715A (enrdf_load_stackoverflow)
SG (1) SG10201906088YA (enrdf_load_stackoverflow)
TW (1) TWI791862B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
WO2021242755A1 (en) * 2020-05-29 2021-12-02 Versum Materials Us, Llc Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
KR102680336B1 (ko) * 2024-02-28 2024-07-02 주식회사 야놀자 Llm 서버 및 외부 서버와 연계하여 사용자가 요청한 기능을 자동으로 수행하는 챗봇 운영 서버 및 그 동작 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028620A (en) * 1988-09-15 1991-07-02 Rohm And Haas Company Biocide composition
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
US6616514B1 (en) * 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
WO2010139603A1 (en) * 2009-06-05 2010-12-09 Basf Se RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)
KR101908280B1 (ko) * 2010-09-08 2018-10-16 바스프 에스이 수성 연마 조성물 및 전기, 기계 및 광학 소자용 기판의 화학적 기계적 연마 방법
WO2012032466A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
CN108276915A (zh) * 2010-12-10 2018-07-13 巴斯夫欧洲公司 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法
WO2013093557A1 (en) * 2011-12-21 2013-06-27 Basf Se Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives
WO2018062401A1 (ja) * 2016-09-29 2018-04-05 花王株式会社 研磨液組成物

Also Published As

Publication number Publication date
EP3587524A1 (en) 2020-01-01
CN110655869A (zh) 2020-01-07
US20200002607A1 (en) 2020-01-02
IL267715A (en) 2019-10-31
TWI791862B (zh) 2023-02-11
JP2020002357A (ja) 2020-01-09
KR20200002709A (ko) 2020-01-08
TW202000815A (zh) 2020-01-01
KR102794696B1 (ko) 2025-04-10

Similar Documents

Publication Publication Date Title
SG10201907380RA (en) Oxide chemical mechanical planarization (cmp) polishing compositions
IL267717A (en) Mechanical chemical polishing to create channels on a surface with a low oxide content
SG10201906659TA (en) Tungsten chemical mechanical polishing for reduced oxide erosion
SG10201905930XA (en) Post chemical mechanical planarization (cmp) cleaning
IL244015A0 (en) Reduction of the chemical mechanical polishing composition containing tungsten
SG10201600570TA (en) Low dishing copper chemical mechanical planarization
SG10201704912YA (en) Chemical mechanical polishing (cmp) of cobalt-containing substrate
SG10201604531VA (en) Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
IL249516B (en) Chemical mechanical polishing preparation
SG10201505743VA (en) Chemical mechanical polishing (cmp) of cobalt-containing substrate
TWI800562B (zh) 化學機械研磨組成物
EP3230395B8 (en) Cmp compositons exhibiting reduced dishing in sti wafer polishing
IL246916A0 (en) Chemical mechanical polishing preparation containing poly(amino acid)
IL291731A (en) Chemical mechanical planarization with the composition containing a little copper
IL267715A (en) Chemical and mechanical polishing of a low oxide channel
SG10201603608RA (en) Residue free oxide etch
IL292390B1 (en) STI chemical mechanical planarization compositions with high oxide removal rates
SG11201705202PA (en) Polishing solution composition for silicon oxide film polishing
IL267714A (en) Chemical mechanical polishing of canals using low oxygen concentration
SG10202001383QA (en) Shallow trench isolation chemical and mechanical polishing slurry
TWI799485B (zh) 化學機械拋光液
TWI799486B (zh) 化學機械拋光液
SG11202008551VA (en) Polishing composition
ZA202101112B (en) Polishing device
SG11201609999TA (en) Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity