SG10201905138WA - Normal incidence photodetector with self-test functionality - Google Patents
Normal incidence photodetector with self-test functionalityInfo
- Publication number
- SG10201905138WA SG10201905138WA SG10201905138WA SG10201905138WA SG10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA
- Authority
- SG
- Singapore
- Prior art keywords
- self
- normal incidence
- test functionality
- incidence photodetector
- photodetector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4286—Optical modules with optical power monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/073—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an out-of-service signal
- H04B10/0731—Testing or characterisation of optical devices, e.g. amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/077—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using a supervisory or additional signal
- H04B10/0775—Performance monitoring and measurement of transmission parameters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/121—Channel; buried or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12123—Diode
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/1215—Splitter
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12164—Multiplexing; Demultiplexing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/197,041 US10666353B1 (en) | 2018-11-20 | 2018-11-20 | Normal incidence photodetector with self-test functionality |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201905138WA true SG10201905138WA (en) | 2020-06-29 |
Family
ID=66810710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201905138WA SG10201905138WA (en) | 2018-11-20 | 2019-06-06 | Normal incidence photodetector with self-test functionality |
Country Status (6)
Country | Link |
---|---|
US (2) | US10666353B1 (ko) |
EP (1) | EP3657555A1 (ko) |
KR (2) | KR102355831B1 (ko) |
CN (2) | CN111211183B (ko) |
SG (1) | SG10201905138WA (ko) |
TW (1) | TW202021153A (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10666353B1 (en) * | 2018-11-20 | 2020-05-26 | Juniper Networks, Inc. | Normal incidence photodetector with self-test functionality |
JP7135871B2 (ja) * | 2019-01-10 | 2022-09-13 | 日本電信電話株式会社 | 光モジュール |
US10951003B1 (en) * | 2020-02-25 | 2021-03-16 | Inphi Corporation | Light source for integrated silicon photonics |
US11165509B1 (en) | 2020-06-05 | 2021-11-02 | Marvell Asia Pte, Ltd. | Method for co-packaging light engine chiplets on switch substrate |
US11153009B1 (en) * | 2020-07-21 | 2021-10-19 | Juniper Networks, Inc. | High-lane count optical transceiver with built-in self test |
US11428880B2 (en) * | 2020-07-31 | 2022-08-30 | Openlight Photonics, Inc. | Optical based placement of an optical compontent using a pick and place machine |
US11428646B2 (en) * | 2020-08-28 | 2022-08-30 | Openlight Photonics, Inc. | Loss monitoring in photonic circuit fabrication |
US11914264B2 (en) | 2020-10-07 | 2024-02-27 | Openlight Photonics, Inc. | Hybrid photonic ring modulators |
CN116299887A (zh) * | 2021-12-14 | 2023-06-23 | 上海曦智科技有限公司 | 光互连装置及其制造方法、计算装置 |
CN114400266B (zh) * | 2021-12-30 | 2023-12-01 | 淮阴工学院 | 一种集成有双吸收区的光电探测器及其制备方法 |
US11950956B1 (en) * | 2021-12-31 | 2024-04-09 | RFNAV Inc. | Piezoelectric micromachined ultrasonic transducer sensor apparatuses, systems, and methods |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3737493A1 (de) * | 1987-11-05 | 1989-05-18 | Hoechst Ag | Verfahren zur erhoehung der elektrostatischen aufladbarkeit von pulverlacken oder pulvern und deren verwendung zur oberflaechenbeschichtung von festen gegenstaenden |
DE4017870A1 (de) * | 1990-06-02 | 1991-12-05 | Standard Elektrik Lorenz Ag | Verfahren zur herstellung und passivierung von halbleiterbauelementen |
US5689122A (en) * | 1995-08-14 | 1997-11-18 | Lucent Technologies Inc. | InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor |
DE19942692B4 (de) * | 1999-09-07 | 2007-04-12 | Infineon Technologies Ag | Optoelektronische Mikroelektronikanordnung |
JP4397491B2 (ja) * | 1999-11-30 | 2010-01-13 | 財団法人国際科学振興財団 | 111面方位を表面に有するシリコンを用いた半導体装置およびその形成方法 |
JP3544352B2 (ja) * | 2000-10-30 | 2004-07-21 | 日本電気株式会社 | 半導体受光素子 |
US6566724B1 (en) * | 2000-12-19 | 2003-05-20 | Northrop Grumman Corporation | Low dark current photodiode |
JP5068402B2 (ja) * | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
JP4713752B2 (ja) * | 2000-12-28 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置およびその製造方法 |
US6990257B2 (en) * | 2001-09-10 | 2006-01-24 | California Institute Of Technology | Electronically biased strip loaded waveguide |
JP3920164B2 (ja) * | 2002-07-23 | 2007-05-30 | 富士通株式会社 | 半導体受光装置及びその製造方法 |
US7148463B2 (en) * | 2003-07-16 | 2006-12-12 | Triquint Semiconductor, Inc. | Increased responsivity photodetector |
US20070104441A1 (en) * | 2005-11-08 | 2007-05-10 | Massachusetts Institute Of Technology | Laterally-integrated waveguide photodetector apparatus and related coupling methods |
JP2010078806A (ja) * | 2008-09-25 | 2010-04-08 | Fuji Xerox Co Ltd | 光モジュール、光伝送装置及び面型光素子 |
US8253175B2 (en) * | 2009-01-19 | 2012-08-28 | Pan Zhong | Sealed semiconductor device |
JP5185157B2 (ja) * | 2009-02-25 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードの製造方法及びフォトダイオード |
JP5335562B2 (ja) * | 2009-06-02 | 2013-11-06 | ルネサスエレクトロニクス株式会社 | メサ型フォトダイオード及びその製造方法 |
JP2011035114A (ja) * | 2009-07-31 | 2011-02-17 | Renesas Electronics Corp | メサ型フォトダイオード及びその製造方法 |
US20110042647A1 (en) * | 2009-08-18 | 2011-02-24 | U.S. Government As Represented By The Secretary Of The Army | Corrugated-quantum well infrared photodetector with reflective sidewall and method |
CN102648594A (zh) * | 2009-10-09 | 2012-08-22 | 美国日本电气实验室公司 | 用于无色无方向多阶roadm节点的没有波长选择器的应答器聚合器 |
TWI562195B (en) * | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
JP2012119490A (ja) * | 2010-11-30 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | 半導体受光素子及びそれを有する受光装置 |
GB201112327D0 (en) * | 2011-07-18 | 2011-08-31 | Epigan Nv | Method for growing III-V epitaxial layers |
US9453914B2 (en) * | 2011-09-08 | 2016-09-27 | Continental Advanced Lidar Solutions Us, Inc. | Terrain mapping LADAR system |
US9846285B2 (en) * | 2012-04-11 | 2017-12-19 | Aurrion, Inc. | Low loss heterogeneous optical waveguide transitions |
US8798467B2 (en) | 2012-06-26 | 2014-08-05 | The Boeing Company | Optical coupler testing system |
US9236958B2 (en) | 2012-08-10 | 2016-01-12 | Skorpios Technologies, Inc. | Method and system for performing testing of photonic devices |
US9509122B1 (en) * | 2012-08-29 | 2016-11-29 | Aurrion, Inc. | Optical cladding layer design |
US9166678B1 (en) * | 2012-09-06 | 2015-10-20 | Aurrion, Inc. | Heterogeneous microwave photonic circuits |
JP6201320B2 (ja) * | 2013-01-16 | 2017-09-27 | 富士通株式会社 | 光モジュールおよび光モジュールのモニタ方法 |
CN105122469B (zh) | 2013-04-19 | 2017-03-08 | 富士通株式会社 | 半导体受光元件及其制造方法 |
US9391225B1 (en) * | 2013-06-11 | 2016-07-12 | Sandia Corporation | Two-dimensional APDs and SPADs and related methods |
US9537580B2 (en) * | 2013-12-18 | 2017-01-03 | Northrop Grumman Systems Corporation | Optical receiver sensitivity system |
GB2523383B (en) * | 2014-02-24 | 2016-09-14 | Rockley Photonics Ltd | Detector remodulator |
JP6378928B2 (ja) * | 2014-05-15 | 2018-08-22 | 富士通株式会社 | Ge系半導体装置、その製造方法及び光インターコネクトシステム |
US9960888B2 (en) | 2014-06-26 | 2018-05-01 | Luxtera, Inc. | Method and system for an optoelectronic built-in self-test system for silicon photonics optical transceivers |
EP3221895A4 (en) * | 2014-11-18 | 2018-08-15 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
CN107112335B (zh) * | 2014-11-24 | 2019-05-31 | 光澄科技股份有限公司 | 用于在相同衬底上制造光电检测器与晶体管的单片集成技术 |
JP6888610B2 (ja) * | 2016-03-03 | 2021-06-16 | 日本電気株式会社 | デジタル光受信機、及び、それを用いた光通信システム |
US10908286B2 (en) | 2017-09-29 | 2021-02-02 | Intel Corporation | Integrated optical transmitter and receiver |
US10488605B1 (en) * | 2018-08-09 | 2019-11-26 | International Business Machines Corporation | Photonic waveguide coupling using offset light source |
US10666353B1 (en) * | 2018-11-20 | 2020-05-26 | Juniper Networks, Inc. | Normal incidence photodetector with self-test functionality |
US10651110B1 (en) * | 2018-12-31 | 2020-05-12 | Juniper Networks, Inc. | Efficient heat-sinking in PIN diode |
-
2018
- 2018-11-20 US US16/197,041 patent/US10666353B1/en active Active
-
2019
- 2019-06-06 SG SG10201905138WA patent/SG10201905138WA/en unknown
- 2019-06-10 EP EP19179218.3A patent/EP3657555A1/en active Pending
- 2019-06-14 TW TW108120635A patent/TW202021153A/zh unknown
- 2019-06-28 CN CN201910576406.7A patent/CN111211183B/zh active Active
- 2019-06-28 CN CN202111143955.9A patent/CN113871497B/zh active Active
- 2019-06-28 KR KR1020190077659A patent/KR102355831B1/ko active IP Right Grant
-
2020
- 2020-04-21 US US16/854,012 patent/US10965369B2/en active Active
-
2021
- 2021-12-28 KR KR1020210189548A patent/KR102497074B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW202021153A (zh) | 2020-06-01 |
CN111211183A (zh) | 2020-05-29 |
US10666353B1 (en) | 2020-05-26 |
KR102497074B1 (ko) | 2023-02-06 |
US20200162156A1 (en) | 2020-05-21 |
EP3657555A1 (en) | 2020-05-27 |
CN113871497A (zh) | 2021-12-31 |
KR20220002832A (ko) | 2022-01-07 |
KR20200059127A (ko) | 2020-05-28 |
US10965369B2 (en) | 2021-03-30 |
KR102355831B1 (ko) | 2022-01-27 |
US20200252126A1 (en) | 2020-08-06 |
CN113871497B (zh) | 2024-05-10 |
CN111211183B (zh) | 2021-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201905138WA (en) | Normal incidence photodetector with self-test functionality | |
EP3280324A4 (en) | Assessing cardiovascular function using an optical sensor | |
EP3471806A4 (en) | USAGE RECORDING DEVICE | |
EP3173778A4 (en) | Dryness/wetness response sensor having high-speed response and high sensitivity | |
EP3673401A4 (en) | CHECKING FIRMWARE INTEGRITY USING SILVER MEASUREMENTS | |
EP3100076A4 (en) | Downhole evaluation with neutron activation measurement | |
EP3721214A4 (en) | MODERATED NEUTRON SENSOR | |
GB2600658B (en) | Self-test circuitry | |
SG10201909988YA (en) | Photodetector | |
IL282332A (en) | PIN photo detector | |
EP3367125A4 (en) | WIND MEASURING DEVICE | |
GB2578471B (en) | Condition detector | |
GB201819524D0 (en) | P-I-N photodetector | |
EP3884522C0 (en) | PICO MULTIPLE TRANSITION AVALANCHE DETECTOR | |
EP3745101A4 (en) | PHOTODESTECTOR DEVICE | |
EP3341726A4 (en) | IMMUNOLOGICAL ASSAY WITH ENHANCED SENSITIVITY | |
EP3351183A4 (en) | PHOTOSENSITIVITY TESTING DEVICE | |
GB201919449D0 (en) | State detection | |
GB201815847D0 (en) | Photodetector | |
GB201911736D0 (en) | Photodetector array | |
EP3745102A4 (en) | PHOTODETECTOR DEVICE | |
GB2562559B (en) | Neutron position detector | |
EP3729260A4 (en) | MULTIPLE PIPELINE ARCHITECTURE WITH SPECIAL NUMBER IDENTIFICATION | |
EP3734242A4 (en) | PHOTODETECTOR | |
EP3588928A4 (en) | READING DEVICE |