SG10201905138WA - Normal incidence photodetector with self-test functionality - Google Patents

Normal incidence photodetector with self-test functionality

Info

Publication number
SG10201905138WA
SG10201905138WA SG10201905138WA SG10201905138WA SG10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA SG 10201905138W A SG10201905138W A SG 10201905138WA
Authority
SG
Singapore
Prior art keywords
self
normal incidence
test functionality
incidence photodetector
photodetector
Prior art date
Application number
SG10201905138WA
Other languages
English (en)
Inventor
John Parker
Brian Robert Koch
Gregory Alan Fish
Hyundai Park
Original Assignee
Juniper Networks Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Juniper Networks Inc filed Critical Juniper Networks Inc
Publication of SG10201905138WA publication Critical patent/SG10201905138WA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4215Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4286Optical modules with optical power monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0304Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/073Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an out-of-service signal
    • H04B10/0731Testing or characterisation of optical devices, e.g. amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/075Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
    • H04B10/077Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using a supervisory or additional signal
    • H04B10/0775Performance monitoring and measurement of transmission parameters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40Transceivers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12061Silicon
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12078Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/121Channel; buried or the like
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12121Laser
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12123Diode
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12145Switch
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/1215Splitter
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12164Multiplexing; Demultiplexing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
SG10201905138WA 2018-11-20 2019-06-06 Normal incidence photodetector with self-test functionality SG10201905138WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16/197,041 US10666353B1 (en) 2018-11-20 2018-11-20 Normal incidence photodetector with self-test functionality

Publications (1)

Publication Number Publication Date
SG10201905138WA true SG10201905138WA (en) 2020-06-29

Family

ID=66810710

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201905138WA SG10201905138WA (en) 2018-11-20 2019-06-06 Normal incidence photodetector with self-test functionality

Country Status (6)

Country Link
US (2) US10666353B1 (ko)
EP (1) EP3657555A1 (ko)
KR (2) KR102355831B1 (ko)
CN (2) CN111211183B (ko)
SG (1) SG10201905138WA (ko)
TW (1) TW202021153A (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality
JP7135871B2 (ja) * 2019-01-10 2022-09-13 日本電信電話株式会社 光モジュール
US10951003B1 (en) * 2020-02-25 2021-03-16 Inphi Corporation Light source for integrated silicon photonics
US11165509B1 (en) 2020-06-05 2021-11-02 Marvell Asia Pte, Ltd. Method for co-packaging light engine chiplets on switch substrate
US11153009B1 (en) * 2020-07-21 2021-10-19 Juniper Networks, Inc. High-lane count optical transceiver with built-in self test
US11428880B2 (en) * 2020-07-31 2022-08-30 Openlight Photonics, Inc. Optical based placement of an optical compontent using a pick and place machine
US11428646B2 (en) * 2020-08-28 2022-08-30 Openlight Photonics, Inc. Loss monitoring in photonic circuit fabrication
US11914264B2 (en) 2020-10-07 2024-02-27 Openlight Photonics, Inc. Hybrid photonic ring modulators
CN116299887A (zh) * 2021-12-14 2023-06-23 上海曦智科技有限公司 光互连装置及其制造方法、计算装置
CN114400266B (zh) * 2021-12-30 2023-12-01 淮阴工学院 一种集成有双吸收区的光电探测器及其制备方法
US11950956B1 (en) * 2021-12-31 2024-04-09 RFNAV Inc. Piezoelectric micromachined ultrasonic transducer sensor apparatuses, systems, and methods

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3737493A1 (de) * 1987-11-05 1989-05-18 Hoechst Ag Verfahren zur erhoehung der elektrostatischen aufladbarkeit von pulverlacken oder pulvern und deren verwendung zur oberflaechenbeschichtung von festen gegenstaenden
DE4017870A1 (de) * 1990-06-02 1991-12-05 Standard Elektrik Lorenz Ag Verfahren zur herstellung und passivierung von halbleiterbauelementen
US5689122A (en) * 1995-08-14 1997-11-18 Lucent Technologies Inc. InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor
DE19942692B4 (de) * 1999-09-07 2007-04-12 Infineon Technologies Ag Optoelektronische Mikroelektronikanordnung
JP4397491B2 (ja) * 1999-11-30 2010-01-13 財団法人国際科学振興財団 111面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
JP3544352B2 (ja) * 2000-10-30 2004-07-21 日本電気株式会社 半導体受光素子
US6566724B1 (en) * 2000-12-19 2003-05-20 Northrop Grumman Corporation Low dark current photodiode
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
JP4713752B2 (ja) * 2000-12-28 2011-06-29 財団法人国際科学振興財団 半導体装置およびその製造方法
US6990257B2 (en) * 2001-09-10 2006-01-24 California Institute Of Technology Electronically biased strip loaded waveguide
JP3920164B2 (ja) * 2002-07-23 2007-05-30 富士通株式会社 半導体受光装置及びその製造方法
US7148463B2 (en) * 2003-07-16 2006-12-12 Triquint Semiconductor, Inc. Increased responsivity photodetector
US20070104441A1 (en) * 2005-11-08 2007-05-10 Massachusetts Institute Of Technology Laterally-integrated waveguide photodetector apparatus and related coupling methods
JP2010078806A (ja) * 2008-09-25 2010-04-08 Fuji Xerox Co Ltd 光モジュール、光伝送装置及び面型光素子
US8253175B2 (en) * 2009-01-19 2012-08-28 Pan Zhong Sealed semiconductor device
JP5185157B2 (ja) * 2009-02-25 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
JP5335562B2 (ja) * 2009-06-02 2013-11-06 ルネサスエレクトロニクス株式会社 メサ型フォトダイオード及びその製造方法
JP2011035114A (ja) * 2009-07-31 2011-02-17 Renesas Electronics Corp メサ型フォトダイオード及びその製造方法
US20110042647A1 (en) * 2009-08-18 2011-02-24 U.S. Government As Represented By The Secretary Of The Army Corrugated-quantum well infrared photodetector with reflective sidewall and method
CN102648594A (zh) * 2009-10-09 2012-08-22 美国日本电气实验室公司 用于无色无方向多阶roadm节点的没有波长选择器的应答器聚合器
TWI562195B (en) * 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
JP2012119490A (ja) * 2010-11-30 2012-06-21 Sumitomo Electric Device Innovations Inc 半導体受光素子及びそれを有する受光装置
GB201112327D0 (en) * 2011-07-18 2011-08-31 Epigan Nv Method for growing III-V epitaxial layers
US9453914B2 (en) * 2011-09-08 2016-09-27 Continental Advanced Lidar Solutions Us, Inc. Terrain mapping LADAR system
US9846285B2 (en) * 2012-04-11 2017-12-19 Aurrion, Inc. Low loss heterogeneous optical waveguide transitions
US8798467B2 (en) 2012-06-26 2014-08-05 The Boeing Company Optical coupler testing system
US9236958B2 (en) 2012-08-10 2016-01-12 Skorpios Technologies, Inc. Method and system for performing testing of photonic devices
US9509122B1 (en) * 2012-08-29 2016-11-29 Aurrion, Inc. Optical cladding layer design
US9166678B1 (en) * 2012-09-06 2015-10-20 Aurrion, Inc. Heterogeneous microwave photonic circuits
JP6201320B2 (ja) * 2013-01-16 2017-09-27 富士通株式会社 光モジュールおよび光モジュールのモニタ方法
CN105122469B (zh) 2013-04-19 2017-03-08 富士通株式会社 半导体受光元件及其制造方法
US9391225B1 (en) * 2013-06-11 2016-07-12 Sandia Corporation Two-dimensional APDs and SPADs and related methods
US9537580B2 (en) * 2013-12-18 2017-01-03 Northrop Grumman Systems Corporation Optical receiver sensitivity system
GB2523383B (en) * 2014-02-24 2016-09-14 Rockley Photonics Ltd Detector remodulator
JP6378928B2 (ja) * 2014-05-15 2018-08-22 富士通株式会社 Ge系半導体装置、その製造方法及び光インターコネクトシステム
US9960888B2 (en) 2014-06-26 2018-05-01 Luxtera, Inc. Method and system for an optoelectronic built-in self-test system for silicon photonics optical transceivers
EP3221895A4 (en) * 2014-11-18 2018-08-15 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
CN107112335B (zh) * 2014-11-24 2019-05-31 光澄科技股份有限公司 用于在相同衬底上制造光电检测器与晶体管的单片集成技术
JP6888610B2 (ja) * 2016-03-03 2021-06-16 日本電気株式会社 デジタル光受信機、及び、それを用いた光通信システム
US10908286B2 (en) 2017-09-29 2021-02-02 Intel Corporation Integrated optical transmitter and receiver
US10488605B1 (en) * 2018-08-09 2019-11-26 International Business Machines Corporation Photonic waveguide coupling using offset light source
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality
US10651110B1 (en) * 2018-12-31 2020-05-12 Juniper Networks, Inc. Efficient heat-sinking in PIN diode

Also Published As

Publication number Publication date
TW202021153A (zh) 2020-06-01
CN111211183A (zh) 2020-05-29
US10666353B1 (en) 2020-05-26
KR102497074B1 (ko) 2023-02-06
US20200162156A1 (en) 2020-05-21
EP3657555A1 (en) 2020-05-27
CN113871497A (zh) 2021-12-31
KR20220002832A (ko) 2022-01-07
KR20200059127A (ko) 2020-05-28
US10965369B2 (en) 2021-03-30
KR102355831B1 (ko) 2022-01-27
US20200252126A1 (en) 2020-08-06
CN113871497B (zh) 2024-05-10
CN111211183B (zh) 2021-10-15

Similar Documents

Publication Publication Date Title
SG10201905138WA (en) Normal incidence photodetector with self-test functionality
EP3280324A4 (en) Assessing cardiovascular function using an optical sensor
EP3471806A4 (en) USAGE RECORDING DEVICE
EP3173778A4 (en) Dryness/wetness response sensor having high-speed response and high sensitivity
EP3673401A4 (en) CHECKING FIRMWARE INTEGRITY USING SILVER MEASUREMENTS
EP3100076A4 (en) Downhole evaluation with neutron activation measurement
EP3721214A4 (en) MODERATED NEUTRON SENSOR
GB2600658B (en) Self-test circuitry
SG10201909988YA (en) Photodetector
IL282332A (en) PIN photo detector
EP3367125A4 (en) WIND MEASURING DEVICE
GB2578471B (en) Condition detector
GB201819524D0 (en) P-I-N photodetector
EP3884522C0 (en) PICO MULTIPLE TRANSITION AVALANCHE DETECTOR
EP3745101A4 (en) PHOTODESTECTOR DEVICE
EP3341726A4 (en) IMMUNOLOGICAL ASSAY WITH ENHANCED SENSITIVITY
EP3351183A4 (en) PHOTOSENSITIVITY TESTING DEVICE
GB201919449D0 (en) State detection
GB201815847D0 (en) Photodetector
GB201911736D0 (en) Photodetector array
EP3745102A4 (en) PHOTODETECTOR DEVICE
GB2562559B (en) Neutron position detector
EP3729260A4 (en) MULTIPLE PIPELINE ARCHITECTURE WITH SPECIAL NUMBER IDENTIFICATION
EP3734242A4 (en) PHOTODETECTOR
EP3588928A4 (en) READING DEVICE