SG10201902037UA - Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device - Google Patents

Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device

Info

Publication number
SG10201902037UA
SG10201902037UA SG10201902037UA SG10201902037UA SG 10201902037U A SG10201902037U A SG 10201902037UA SG 10201902037U A SG10201902037U A SG 10201902037UA SG 10201902037U A SG10201902037U A SG 10201902037UA
Authority
SG
Singapore
Prior art keywords
germanium
silicon
etching solution
semiconductor device
selectively removing
Prior art date
Application number
Other languages
English (en)
Inventor
Dar Liu Wen
Lee Yi-Chia
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201902037UA publication Critical patent/SG10201902037UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/16—Sulfur-containing compounds
    • C23F11/165—Heterocyclic compounds containing sulfur as hetero atom
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG10201902037U 2018-03-09 2019-03-07 Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device SG10201902037UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862641168P 2018-03-09 2018-03-09
US16/285,961 US10934484B2 (en) 2018-03-09 2019-02-26 Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device

Publications (1)

Publication Number Publication Date
SG10201902037UA true SG10201902037UA (en) 2019-10-30

Family

ID=65766814

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201902037U SG10201902037UA (en) 2018-03-09 2019-03-07 Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device

Country Status (8)

Country Link
US (1) US10934484B2 (fr)
EP (1) EP3537473B1 (fr)
JP (1) JP6993998B2 (fr)
KR (1) KR102332397B1 (fr)
CN (1) CN110240907B (fr)
IL (1) IL265202B2 (fr)
SG (1) SG10201902037UA (fr)
TW (1) TWI714013B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
JP7450334B2 (ja) * 2018-12-27 2024-03-15 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法
US11946148B2 (en) 2019-01-11 2024-04-02 Versum Materials Us, Llc Hafnium oxide corrosion inhibitor
US11164892B2 (en) * 2019-07-01 2021-11-02 Newport Fab, Llc Semiconductor-on-insulator (SOI) device with reduced parasitic capacitance
WO2021176913A1 (fr) * 2020-03-04 2021-09-10 富士フイルム株式会社 Solution de traitement et récipient de solution de traitement
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
US11424120B2 (en) 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques
KR20220119860A (ko) * 2021-02-22 2022-08-30 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
KR20220126436A (ko) * 2021-03-09 2022-09-16 주식회사 이엔에프테크놀로지 디스플레이 기판용 식각액
CN114316990B (zh) * 2021-12-09 2023-04-07 湖北兴福电子材料股份有限公司 一种高蚀刻锥角的锗蚀刻液
US20230307240A1 (en) * 2022-03-25 2023-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Wet etching chemistry and method of forming semiconductor device using the same
CN115595154A (zh) * 2022-08-31 2023-01-13 湖北兴福电子材料股份有限公司（Cn） 一种SiGe和Si的选择性蚀刻液
CN115505390B (zh) * 2022-09-20 2023-07-11 湖北兴福电子材料股份有限公司 一种高选择性锗蚀刻液
WO2024062877A1 (fr) * 2022-09-21 2024-03-28 富士フイルム株式会社 Liquide chimique et procédé de traitement
CN116144365B (zh) * 2023-01-30 2023-10-03 江苏美阳电子材料有限公司 一种缓冲氧化腐蚀液及其制备方法和应用

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833084B2 (en) * 1999-04-05 2004-12-21 Micron Technology, Inc. Etching compositions
US6987042B2 (en) * 2003-05-30 2006-01-17 International Business Machines Corporation Method of forming a collar using selective SiGe/Amorphous Si Etch
US7176041B2 (en) 2003-07-01 2007-02-13 Samsung Electronics Co., Ltd. PAA-based etchant, methods of using same, and resultant structures
TWI283442B (en) 2004-09-09 2007-07-01 Sez Ag Method for selective etching
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
JP4306724B2 (ja) 2006-12-19 2009-08-05 セイコーエプソン株式会社 半導体装置の製造方法
JP2013533631A (ja) * 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
CN104145324B (zh) 2011-12-28 2017-12-22 恩特格里斯公司 用于选择性蚀刻氮化钛的组合物和方法
EP2964725B1 (fr) * 2013-03-04 2021-06-23 Entegris, Inc. Compositions et procédés pour graver sélectivement du nitrure de titane
KR101790090B1 (ko) * 2013-05-02 2017-10-25 후지필름 가부시키가이샤 에칭 방법, 이에 이용하는 에칭액 및 에칭액의 키트, 및 반도체 기판 제품의 제조 방법
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
EP3027709A4 (fr) 2013-07-31 2017-03-29 Entegris, Inc. Formulations aqueuses pour l'élimination des masques métalliques durs et des résidus de gravure présentant une compatibilité cu/w
SG11201601158VA (en) * 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
WO2015103146A1 (fr) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations de gravure sélective de silicium et de germanium
JP6550123B2 (ja) * 2014-03-18 2019-07-24 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
TWI682989B (zh) * 2014-04-30 2020-01-21 日商富士軟片股份有限公司 蝕刻液、使用其的蝕刻方法及半導體基板製品的製造方法以及金屬防蝕劑
JP6425342B2 (ja) * 2014-12-26 2018-11-21 富士フイルム株式会社 エッチング液、これを用いたエッチング方法および半導体基板製品の製造方法
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
WO2017007893A1 (fr) 2015-07-09 2017-01-12 Entegris, Inc. Formulations de gravure sélective de silicium-germanium par rapport à du germanium
KR102457249B1 (ko) 2015-09-18 2022-10-21 주식회사 이엔에프테크놀로지 식각 조성물
US10400167B2 (en) 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
US10879076B2 (en) 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device

Also Published As

Publication number Publication date
CN110240907B (zh) 2021-09-17
JP6993998B2 (ja) 2022-01-14
KR102332397B1 (ko) 2021-11-30
EP3537473B1 (fr) 2024-05-01
TWI714013B (zh) 2020-12-21
KR20190106803A (ko) 2019-09-18
TW201938844A (zh) 2019-10-01
IL265202B (en) 2022-10-01
IL265202B2 (en) 2023-02-01
IL265202A (en) 2019-05-30
US10934484B2 (en) 2021-03-02
EP3537473A1 (fr) 2019-09-11
JP2019165218A (ja) 2019-09-26
US20190276739A1 (en) 2019-09-12
CN110240907A (zh) 2019-09-17

Similar Documents

Publication Publication Date Title
SG10201902037UA (en) Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/germanium stack during manufacture of a semiconductor device
SG10201807212VA (en) Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
SG10201807214WA (en) Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
SG10201804769SA (en) Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
SG11201804639QA (en) Composition for etching and method for manufacturing semiconductor device using same
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
PH12015000443A1 (en) Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
EP3666852A3 (fr) Solution de gravure comprenant un inhibiteur de corrosion d'oxyde de silicium et son procédé d'utilisation
WO2016138218A8 (fr) Procédés et appareil permettant d'utiliser des alkylamines pour l'élimination sélective de nitrure métallique
MY173184A (en) Tin hard mask and etch residue removal
TW200710205A (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
JP5853953B2 (ja) トランジスタの製造方法
SG164385A1 (en) Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings
EP3684887A4 (fr) Solution de gravure permettant d'éliminer simultanément du silicium et un alliage silicium-germanium d'un empilement silicium-germanium/silicium pendant la fabrication d'un dispositif à semi-conducteur
SG10201807213YA (en) Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device
MY173068A (en) Stripping compositions having high wn/w etching selectivity
TW200617623A (en) Composition for removing a photoresist residue and polymer residue, and residue removal process using same
TW200634449A (en) Photoresist stripper composition
TW200710611A (en) Photoresist remover composition for removing modified photoresist of semiconductor device
ECSP17056462A (es) Composiciones de dispersión de depresor del punto de vertido, acuosas, estables a solventes de hidrocarburos
WO2006132989A3 (fr) Procede et solution de nettoyage pour nettoyer une tranche en un processus de nettoyage tranche par tranche
WO2002004233A8 (fr) Compositions pour eliminer des residus organiques et de gravure au plasma pour des dispositifs a semi-conducteurs
ATE405621T1 (de) Aufüberkritischem kohlenstoffdioxid beruhende formulierung für die entfernung von gegebenenfalls veraschten aluminiumresten nach dem ätzen
WO2020185762A8 (fr) Solution de gravure et procédé d'élimination sélective de nitrure de silicium pendant la fabrication d'un dispositif à semi-conducteur
WO2013025619A3 (fr) Procédé et composition pour retirer un résist, un résidu de gravure et de l'oxyde de cuivre à partir de substrats présentant du cuivre, un masque dur de métal et une matière diélectrique à faible k