SG10201900165XA - Wafer producing method and wafer producing apparatus - Google Patents
Wafer producing method and wafer producing apparatusInfo
- Publication number
- SG10201900165XA SG10201900165XA SG10201900165XA SG10201900165XA SG10201900165XA SG 10201900165X A SG10201900165X A SG 10201900165XA SG 10201900165X A SG10201900165X A SG 10201900165XA SG 10201900165X A SG10201900165X A SG 10201900165XA SG 10201900165X A SG10201900165X A SG 10201900165XA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- single crystal
- crystal ingot
- hexagonal single
- wafer producing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000013078 crystal Substances 0.000 abstract 5
- 238000000926 separation method Methods 0.000 abstract 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018007972A JP7046617B2 (ja) | 2018-01-22 | 2018-01-22 | ウエーハの生成方法およびウエーハの生成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201900165XA true SG10201900165XA (en) | 2019-08-27 |
Family
ID=67144939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201900165XA SG10201900165XA (en) | 2018-01-22 | 2019-01-08 | Wafer producing method and wafer producing apparatus |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190228980A1 (de) |
JP (1) | JP7046617B2 (de) |
KR (1) | KR102570139B1 (de) |
CN (1) | CN110071034B (de) |
DE (1) | DE102019200729A1 (de) |
MY (1) | MY202343A (de) |
SG (1) | SG10201900165XA (de) |
TW (1) | TWI810237B (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7123583B2 (ja) * | 2018-03-14 | 2022-08-23 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7237427B2 (ja) * | 2019-05-14 | 2023-03-13 | 株式会社ディスコ | ウェーハの製造方法、及びインゴットの分断装置 |
JP7442332B2 (ja) * | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
CN111986986B (zh) * | 2020-08-24 | 2024-05-03 | 松山湖材料实验室 | 一种晶圆的剥离方法及剥离装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6118068A (ja) * | 1984-07-05 | 1986-01-25 | Fujitsu Ltd | 語学学習装置 |
JPH06118068A (ja) * | 1991-06-28 | 1994-04-28 | Mitsubishi Heavy Ind Ltd | 材料の非破壊検査装置及び方法 |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP2005142495A (ja) * | 2003-11-10 | 2005-06-02 | Sharp Corp | 基板クラック検査方法、基板クラック検査装置、太陽電池モジュールの製造方法 |
US20080223136A1 (en) * | 2005-08-04 | 2008-09-18 | Tokyo Electron Limited | Minute structure inspection device, inspection method, and inspection program |
JP5186102B2 (ja) * | 2005-11-25 | 2013-04-17 | パナソニック株式会社 | マイクロホンパッケージの製造方法及びマイクロホンパッケージ |
US9362439B2 (en) * | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
JP2008076630A (ja) * | 2006-09-20 | 2008-04-03 | Sekisui Chem Co Ltd | 膜の剥離方法 |
JP2009289803A (ja) * | 2008-05-27 | 2009-12-10 | Mediken Inc | ウエット処理方法及びウエット処理装置 |
JP5758111B2 (ja) * | 2010-12-02 | 2015-08-05 | 株式会社ディスコ | 切削装置 |
CH705370A1 (de) * | 2011-07-31 | 2013-01-31 | Kulicke & Soffa Die Bonding Gmbh | Verfahren und Vorrichtung zur Inspektion eines Halbleiterchips vor der Montage. |
JP6401021B2 (ja) * | 2014-11-18 | 2018-10-03 | 株式会社荏原製作所 | 基板洗浄装置、基板処理装置、および基板洗浄方法 |
JP6399913B2 (ja) | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
JP6391471B2 (ja) * | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395632B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6472332B2 (ja) * | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP6426057B2 (ja) * | 2015-06-16 | 2018-11-21 | 株式会社Screenホールディングス | クラック検知方法、クラック検知装置および基板処理装置 |
WO2017110967A1 (ja) * | 2015-12-25 | 2017-06-29 | 株式会社Sumco | ルツボ検査装置、ルツボ検査方法、シリカガラスルツボ、シリカガラスルツボの製造方法、シリコンインゴットの製造方法、ホモエピタキシャルウェーハの製造方法 |
JP2017157696A (ja) * | 2016-03-02 | 2017-09-07 | 株式会社ディスコ | ブレーキング装置及び加工方法 |
JP6400620B2 (ja) * | 2016-03-11 | 2018-10-03 | 東芝メモリ株式会社 | 半導体製造装置の制御装置および制御方法 |
JP6619685B2 (ja) * | 2016-04-19 | 2019-12-11 | 株式会社ディスコ | SiCウエーハの加工方法 |
-
2018
- 2018-01-22 JP JP2018007972A patent/JP7046617B2/ja active Active
-
2019
- 2019-01-03 MY MYPI2019000223A patent/MY202343A/en unknown
- 2019-01-08 SG SG10201900165XA patent/SG10201900165XA/en unknown
- 2019-01-11 KR KR1020190003900A patent/KR102570139B1/ko active IP Right Grant
- 2019-01-18 US US16/251,876 patent/US20190228980A1/en active Pending
- 2019-01-21 CN CN201910051891.6A patent/CN110071034B/zh active Active
- 2019-01-21 TW TW108102199A patent/TWI810237B/zh active
- 2019-01-22 DE DE102019200729.5A patent/DE102019200729A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI810237B (zh) | 2023-08-01 |
KR20190089730A (ko) | 2019-07-31 |
CN110071034A (zh) | 2019-07-30 |
JP7046617B2 (ja) | 2022-04-04 |
CN110071034B (zh) | 2024-03-19 |
JP2019129174A (ja) | 2019-08-01 |
TW201933707A (zh) | 2019-08-16 |
MY202343A (en) | 2024-04-24 |
DE102019200729A1 (de) | 2019-07-25 |
KR102570139B1 (ko) | 2023-08-23 |
US20190228980A1 (en) | 2019-07-25 |
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