SG10201808641QA - Electrode for plasma processing chamber - Google Patents

Electrode for plasma processing chamber

Info

Publication number
SG10201808641QA
SG10201808641QA SG10201808641QA SG10201808641QA SG10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA
Authority
SG
Singapore
Prior art keywords
plate
electrode
plasma processing
electrical conductivity
high electrical
Prior art date
Application number
SG10201808641QA
Other languages
English (en)
Inventor
Evan Edward Patton
John Daugherty
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201808641QA publication Critical patent/SG10201808641QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201808641QA 2017-10-17 2018-10-01 Electrode for plasma processing chamber SG10201808641QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/785,983 US10964514B2 (en) 2017-10-17 2017-10-17 Electrode for plasma processing chamber

Publications (1)

Publication Number Publication Date
SG10201808641QA true SG10201808641QA (en) 2019-05-30

Family

ID=66097109

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201808641QA SG10201808641QA (en) 2017-10-17 2018-10-01 Electrode for plasma processing chamber

Country Status (6)

Country Link
US (1) US10964514B2 (ko)
JP (2) JP7254473B2 (ko)
KR (2) KR102612617B1 (ko)
CN (1) CN109994352B (ko)
SG (1) SG10201808641QA (ko)
TW (1) TWI803524B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017100192A1 (de) * 2017-01-06 2018-07-12 Cinogy Gmbh Permanente Wundauflage mit Plasmaelektrode
WO2024053563A1 (ja) * 2022-09-09 2024-03-14 東京エレクトロン株式会社 電極板、電極アセンブリ及びプラズマ処理装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890493B2 (ja) * 1989-07-10 1999-05-17 ソニー株式会社 プラズマ処理装置及びプラズマ処理方法
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2003068722A (ja) * 2001-08-30 2003-03-07 Hitachi Ltd プラズマ処理装置
US20030185729A1 (en) 2002-03-29 2003-10-02 Ho Ko Electrode assembly for processing a semiconductor substrate and processing apparatus having the same
JP2006165093A (ja) * 2004-12-03 2006-06-22 Tokyo Electron Ltd プラズマ処理装置
JP5082246B2 (ja) 2006-01-20 2012-11-28 東京エレクトロン株式会社 プラズマ発生用の電極、プラズマ処理装置及びプラズマ発生用の電極の製造方法
US7619179B2 (en) * 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
US7649316B2 (en) * 2007-07-13 2010-01-19 Micron Technology, Inc. Assemblies for plasma-enhanced treatment of substrates
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
JP5294669B2 (ja) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 プラズマ処理装置
US8679288B2 (en) * 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
SG169960A1 (en) * 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
SG170717A1 (en) * 2009-11-02 2011-05-30 Lam Res Corp Hot edge ring with sloped upper surface
JP5592129B2 (ja) * 2010-03-16 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置
JP5563347B2 (ja) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US8470127B2 (en) * 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP6068849B2 (ja) * 2012-07-17 2017-01-25 東京エレクトロン株式会社 上部電極、及びプラズマ処理装置
US9275840B2 (en) * 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
CN204927231U (zh) * 2015-08-27 2015-12-30 上海至纯洁净系统科技股份有限公司 一种电极结构

Also Published As

Publication number Publication date
CN109994352B (zh) 2023-07-18
JP2023078436A (ja) 2023-06-06
KR20190043081A (ko) 2019-04-25
JP7485817B2 (ja) 2024-05-16
KR102612617B1 (ko) 2023-12-11
US20190115189A1 (en) 2019-04-18
TW201929033A (zh) 2019-07-16
TWI803524B (zh) 2023-06-01
JP2019091885A (ja) 2019-06-13
KR20230169913A (ko) 2023-12-18
US10964514B2 (en) 2021-03-30
JP7254473B2 (ja) 2023-04-10
CN109994352A (zh) 2019-07-09

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