SG10201703362TA - Method of evaluating gettering property - Google Patents

Method of evaluating gettering property

Info

Publication number
SG10201703362TA
SG10201703362TA SG10201703362TA SG10201703362TA SG10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA
Authority
SG
Singapore
Prior art keywords
gettering property
evaluating gettering
evaluating
property
gettering
Prior art date
Application number
SG10201703362TA
Other languages
English (en)
Inventor
Sukegawa Naoya
Yokota Ryohei
Fuwa Naruto
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201703362TA publication Critical patent/SG10201703362TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG10201703362TA 2016-05-19 2017-04-25 Method of evaluating gettering property SG10201703362TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016100288A JP6637379B2 (ja) 2016-05-19 2016-05-19 ウエーハの評価方法

Publications (1)

Publication Number Publication Date
SG10201703362TA true SG10201703362TA (en) 2017-12-28

Family

ID=60330387

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201703362TA SG10201703362TA (en) 2016-05-19 2017-04-25 Method of evaluating gettering property

Country Status (7)

Country Link
US (1) US10068811B2 (ko)
JP (1) JP6637379B2 (ko)
KR (1) KR102252842B1 (ko)
CN (1) CN107403738B (ko)
MY (1) MY185738A (ko)
SG (1) SG10201703362TA (ko)
TW (1) TWI721153B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021015850A (ja) 2019-07-10 2021-02-12 株式会社ディスコ ウェーハ検査装置
JP2021041472A (ja) * 2019-09-09 2021-03-18 株式会社ディスコ 加工装置
KR20210047999A (ko) * 2019-10-22 2021-05-03 삼성디스플레이 주식회사 연마 헤드 유닛, 이를 포함하는 기판 처리 장치, 그리고 이를 이용하는 기판 처리 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3789802B2 (ja) * 2001-10-19 2006-06-28 富士通株式会社 半導体装置の製造方法
JP4943636B2 (ja) * 2004-03-25 2012-05-30 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7108591B1 (en) * 2004-03-31 2006-09-19 Lam Research Corporation Compliant wafer chuck
JP2006303223A (ja) * 2005-04-21 2006-11-02 Disco Abrasive Syst Ltd ウエーハの加工方法
JP4871617B2 (ja) * 2006-03-09 2012-02-08 株式会社ディスコ ウエーハの加工方法
JP2009094326A (ja) * 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd ウェーハの研削方法
JP5323342B2 (ja) * 2007-11-28 2013-10-23 エム・イー・エム・シー株式会社 半導体ウエハの研磨方法
JP5226287B2 (ja) * 2007-12-07 2013-07-03 株式会社ディスコ ウェーハの研削方法
JP2010030007A (ja) * 2008-07-30 2010-02-12 Disco Abrasive Syst Ltd 研削装置及びスクラッチ検出装置
JP5933189B2 (ja) * 2011-05-12 2016-06-08 株式会社ディスコ デバイスの加工方法
JP5793341B2 (ja) * 2011-05-12 2015-10-14 株式会社ディスコ ウェーハの加工方法
CN102305748A (zh) * 2011-08-02 2012-01-04 西安交通大学 一种磨损原位测量的摩擦磨损试验机
JP6076601B2 (ja) * 2012-01-30 2017-02-08 浜松ホトニクス株式会社 レーザ加工方法、半導体デバイスの製造方法及びレーザ加工装置
JP6324958B2 (ja) * 2013-07-02 2018-05-16 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR20150143151A (ko) * 2014-06-13 2015-12-23 삼성전자주식회사 웨이퍼의 연마 방법
JP6410490B2 (ja) * 2014-06-27 2018-10-24 株式会社ディスコ デバイスウェーハの評価方法

Also Published As

Publication number Publication date
TW201805999A (zh) 2018-02-16
CN107403738B (zh) 2022-10-11
MY185738A (en) 2021-06-02
KR20170131244A (ko) 2017-11-29
TWI721153B (zh) 2021-03-11
CN107403738A (zh) 2017-11-28
KR102252842B1 (ko) 2021-05-14
US10068811B2 (en) 2018-09-04
JP2017208466A (ja) 2017-11-24
JP6637379B2 (ja) 2020-01-29
US20170338158A1 (en) 2017-11-23

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