SG10201703362TA - Method of evaluating gettering property - Google Patents

Method of evaluating gettering property

Info

Publication number
SG10201703362TA
SG10201703362TA SG10201703362TA SG10201703362TA SG10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA
Authority
SG
Singapore
Prior art keywords
gettering property
evaluating gettering
evaluating
property
gettering
Prior art date
Application number
SG10201703362TA
Inventor
Sukegawa Naoya
Yokota Ryohei
Fuwa Naruto
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201703362TA publication Critical patent/SG10201703362TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02016Backside treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/34Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG10201703362TA 2016-05-19 2017-04-25 Method of evaluating gettering property SG10201703362TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016100288A JP6637379B2 (en) 2016-05-19 2016-05-19 Wafer evaluation method

Publications (1)

Publication Number Publication Date
SG10201703362TA true SG10201703362TA (en) 2017-12-28

Family

ID=60330387

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201703362TA SG10201703362TA (en) 2016-05-19 2017-04-25 Method of evaluating gettering property

Country Status (7)

Country Link
US (1) US10068811B2 (en)
JP (1) JP6637379B2 (en)
KR (1) KR102252842B1 (en)
CN (1) CN107403738B (en)
MY (1) MY185738A (en)
SG (1) SG10201703362TA (en)
TW (1) TWI721153B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021015850A (en) 2019-07-10 2021-02-12 株式会社ディスコ Wafer inspection device
JP2021041472A (en) * 2019-09-09 2021-03-18 株式会社ディスコ Machining device
KR20210047999A (en) * 2019-10-22 2021-05-03 삼성디스플레이 주식회사 Polishing head unit, substrate procesing apparatus including the same and processing method of substrate using the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3789802B2 (en) * 2001-10-19 2006-06-28 富士通株式会社 Manufacturing method of semiconductor device
JP4943636B2 (en) * 2004-03-25 2012-05-30 エルピーダメモリ株式会社 Semiconductor device and manufacturing method thereof
US7108591B1 (en) * 2004-03-31 2006-09-19 Lam Research Corporation Compliant wafer chuck
JP2006303223A (en) * 2005-04-21 2006-11-02 Disco Abrasive Syst Ltd Processing method of wafer
JP4871617B2 (en) * 2006-03-09 2012-02-08 株式会社ディスコ Wafer processing method
JP2009094326A (en) * 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd Method of grinding wafer
JP5323342B2 (en) * 2007-11-28 2013-10-23 エム・イー・エム・シー株式会社 Semiconductor wafer polishing method
JP5226287B2 (en) * 2007-12-07 2013-07-03 株式会社ディスコ Wafer grinding method
JP2010030007A (en) * 2008-07-30 2010-02-12 Disco Abrasive Syst Ltd Grinder and scratch detection apparatus
JP5793341B2 (en) * 2011-05-12 2015-10-14 株式会社ディスコ Wafer processing method
JP5933189B2 (en) * 2011-05-12 2016-06-08 株式会社ディスコ Device processing method
CN102305748A (en) * 2011-08-02 2012-01-04 西安交通大学 Frictional abrasion tester used for abrasion in-site measurement
JP6076601B2 (en) * 2012-01-30 2017-02-08 浜松ホトニクス株式会社 Laser processing method, semiconductor device manufacturing method, and laser processing apparatus
TWI622687B (en) * 2013-07-02 2018-05-01 富士紡控股股份有限公司 Polishing pad and method for producing the same
KR20150143151A (en) * 2014-06-13 2015-12-23 삼성전자주식회사 Method for polishing substrate
JP6410490B2 (en) * 2014-06-27 2018-10-24 株式会社ディスコ Device wafer evaluation method

Also Published As

Publication number Publication date
KR102252842B1 (en) 2021-05-14
JP6637379B2 (en) 2020-01-29
CN107403738A (en) 2017-11-28
JP2017208466A (en) 2017-11-24
TWI721153B (en) 2021-03-11
CN107403738B (en) 2022-10-11
TW201805999A (en) 2018-02-16
MY185738A (en) 2021-06-02
US20170338158A1 (en) 2017-11-23
US10068811B2 (en) 2018-09-04
KR20170131244A (en) 2017-11-29

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