SG10201703362TA - Method of evaluating gettering property - Google Patents
Method of evaluating gettering propertyInfo
- Publication number
- SG10201703362TA SG10201703362TA SG10201703362TA SG10201703362TA SG10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA SG 10201703362T A SG10201703362T A SG 10201703362TA
- Authority
- SG
- Singapore
- Prior art keywords
- gettering property
- evaluating gettering
- evaluating
- property
- gettering
- Prior art date
Links
- 238000005247 gettering Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016100288A JP6637379B2 (en) | 2016-05-19 | 2016-05-19 | Wafer evaluation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201703362TA true SG10201703362TA (en) | 2017-12-28 |
Family
ID=60330387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703362TA SG10201703362TA (en) | 2016-05-19 | 2017-04-25 | Method of evaluating gettering property |
Country Status (7)
Country | Link |
---|---|
US (1) | US10068811B2 (en) |
JP (1) | JP6637379B2 (en) |
KR (1) | KR102252842B1 (en) |
CN (1) | CN107403738B (en) |
MY (1) | MY185738A (en) |
SG (1) | SG10201703362TA (en) |
TW (1) | TWI721153B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021015850A (en) | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | Wafer inspection device |
JP2021041472A (en) * | 2019-09-09 | 2021-03-18 | 株式会社ディスコ | Machining device |
KR20210047999A (en) * | 2019-10-22 | 2021-05-03 | 삼성디스플레이 주식회사 | Polishing head unit, substrate procesing apparatus including the same and processing method of substrate using the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3789802B2 (en) * | 2001-10-19 | 2006-06-28 | 富士通株式会社 | Manufacturing method of semiconductor device |
JP4943636B2 (en) * | 2004-03-25 | 2012-05-30 | エルピーダメモリ株式会社 | Semiconductor device and manufacturing method thereof |
US7108591B1 (en) * | 2004-03-31 | 2006-09-19 | Lam Research Corporation | Compliant wafer chuck |
JP2006303223A (en) * | 2005-04-21 | 2006-11-02 | Disco Abrasive Syst Ltd | Processing method of wafer |
JP4871617B2 (en) * | 2006-03-09 | 2012-02-08 | 株式会社ディスコ | Wafer processing method |
JP2009094326A (en) * | 2007-10-10 | 2009-04-30 | Disco Abrasive Syst Ltd | Method of grinding wafer |
JP5323342B2 (en) * | 2007-11-28 | 2013-10-23 | エム・イー・エム・シー株式会社 | Semiconductor wafer polishing method |
JP5226287B2 (en) * | 2007-12-07 | 2013-07-03 | 株式会社ディスコ | Wafer grinding method |
JP2010030007A (en) * | 2008-07-30 | 2010-02-12 | Disco Abrasive Syst Ltd | Grinder and scratch detection apparatus |
JP5793341B2 (en) * | 2011-05-12 | 2015-10-14 | 株式会社ディスコ | Wafer processing method |
JP5933189B2 (en) * | 2011-05-12 | 2016-06-08 | 株式会社ディスコ | Device processing method |
CN102305748A (en) * | 2011-08-02 | 2012-01-04 | 西安交通大学 | Frictional abrasion tester used for abrasion in-site measurement |
JP6076601B2 (en) * | 2012-01-30 | 2017-02-08 | 浜松ホトニクス株式会社 | Laser processing method, semiconductor device manufacturing method, and laser processing apparatus |
TWI622687B (en) * | 2013-07-02 | 2018-05-01 | 富士紡控股股份有限公司 | Polishing pad and method for producing the same |
KR20150143151A (en) * | 2014-06-13 | 2015-12-23 | 삼성전자주식회사 | Method for polishing substrate |
JP6410490B2 (en) * | 2014-06-27 | 2018-10-24 | 株式会社ディスコ | Device wafer evaluation method |
-
2016
- 2016-05-19 JP JP2016100288A patent/JP6637379B2/en active Active
-
2017
- 2017-04-14 TW TW106112630A patent/TWI721153B/en active
- 2017-04-25 SG SG10201703362TA patent/SG10201703362TA/en unknown
- 2017-04-27 MY MYPI2017701485A patent/MY185738A/en unknown
- 2017-05-12 US US15/594,073 patent/US10068811B2/en active Active
- 2017-05-12 CN CN201710332524.4A patent/CN107403738B/en active Active
- 2017-05-17 KR KR1020170060955A patent/KR102252842B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102252842B1 (en) | 2021-05-14 |
JP6637379B2 (en) | 2020-01-29 |
CN107403738A (en) | 2017-11-28 |
JP2017208466A (en) | 2017-11-24 |
TWI721153B (en) | 2021-03-11 |
CN107403738B (en) | 2022-10-11 |
TW201805999A (en) | 2018-02-16 |
MY185738A (en) | 2021-06-02 |
US20170338158A1 (en) | 2017-11-23 |
US10068811B2 (en) | 2018-09-04 |
KR20170131244A (en) | 2017-11-29 |
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