SG10201602107SA - Composition for forming pattern reversal film and method for forming reversal pattern - Google Patents

Composition for forming pattern reversal film and method for forming reversal pattern

Info

Publication number
SG10201602107SA
SG10201602107SA SG10201602107SA SG10201602107SA SG10201602107SA SG 10201602107S A SG10201602107S A SG 10201602107SA SG 10201602107S A SG10201602107S A SG 10201602107SA SG 10201602107S A SG10201602107S A SG 10201602107SA SG 10201602107S A SG10201602107S A SG 10201602107SA
Authority
SG
Singapore
Prior art keywords
forming
pattern
reversal
composition
film
Prior art date
Application number
SG10201602107SA
Other languages
English (en)
Inventor
Yasushi Sakaida
Hiroaki Yaguchi
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of SG10201602107SA publication Critical patent/SG10201602107SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/09Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • C09D183/06Polysiloxanes containing silicon bound to oxygen-containing groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0752Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • G03F7/405Treatment with inorganic or organometallic reagents after imagewise removal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/582Recycling of unreacted starting or intermediate materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
SG10201602107SA 2011-03-28 2012-02-24 Composition for forming pattern reversal film and method for forming reversal pattern SG10201602107SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011069889 2011-03-28

Publications (1)

Publication Number Publication Date
SG10201602107SA true SG10201602107SA (en) 2016-05-30

Family

ID=46930446

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2013072368A SG193961A1 (en) 2011-03-28 2012-02-24 Composition for forming pattern reversal film, and method for forming reversal pattern
SG10201602107SA SG10201602107SA (en) 2011-03-28 2012-02-24 Composition for forming pattern reversal film and method for forming reversal pattern

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2013072368A SG193961A1 (en) 2011-03-28 2012-02-24 Composition for forming pattern reversal film, and method for forming reversal pattern

Country Status (7)

Country Link
US (1) US9165781B2 (ja)
JP (1) JP5773176B2 (ja)
KR (1) KR101713689B1 (ja)
CN (1) CN103443711B (ja)
SG (2) SG193961A1 (ja)
TW (1) TWI553042B (ja)
WO (1) WO2012132686A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6002554B2 (ja) * 2012-11-26 2016-10-05 富士フイルム株式会社 パターン形成方法、及び、これを用いる電子デバイスの製造方法
JP5794243B2 (ja) * 2013-02-18 2015-10-14 信越化学工業株式会社 パターン形成方法
JP5842841B2 (ja) * 2013-02-18 2016-01-13 信越化学工業株式会社 パターン形成方法
WO2016031563A1 (ja) * 2014-08-25 2016-03-03 日産化学工業株式会社 Socパターン上でのパターン反転のための被覆用組成物
CN105301900A (zh) * 2015-11-16 2016-02-03 北京中科紫鑫科技有限责任公司 一种光刻胶组合物和形成光刻图案的方法
CN105301903A (zh) * 2015-11-16 2016-02-03 北京中科紫鑫科技有限责任公司 一种形成光刻胶组合物
KR20180123024A (ko) * 2016-03-30 2018-11-14 닛산 가가쿠 가부시키가이샤 레지스트패턴 피복용 수용액 및 이를 이용한 패턴 형성방법
JP6654534B2 (ja) * 2016-09-15 2020-02-26 株式会社Screenホールディングス 基板処理装置および基板処理方法
WO2021049472A1 (ja) * 2019-09-10 2021-03-18 学校法人 関西大学 化合物、樹脂、組成物、レジスト膜、パターン形成方法、下層膜、及び光学物品

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267253A (ja) 1992-03-24 1993-10-15 Fujitsu Ltd 半導体装置の製造方法
JP3848070B2 (ja) 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
EP2094815B1 (en) 2006-12-22 2012-06-27 Rolic AG Patternable liquid crystal polymer comprising thio-ether units
JP5035151B2 (ja) 2008-07-10 2012-09-26 Jsr株式会社 パターン反転用樹脂組成物及び反転パターン形成方法
KR101541439B1 (ko) 2008-07-24 2015-08-03 닛산 가가쿠 고교 가부시키 가이샤 코팅 조성물 및 패턴 형성방법
JP5438959B2 (ja) * 2008-12-24 2014-03-12 東京応化工業株式会社 パターン形成方法
TWI416262B (zh) 2009-03-13 2013-11-21 Jsr Corp A silicon film-forming composition, a silicon-containing film, and a pattern-forming method
JP5282920B2 (ja) * 2009-04-24 2013-09-04 日産化学工業株式会社 パターン反転膜形成用組成物及び反転パターン形成方法

Also Published As

Publication number Publication date
JP5773176B2 (ja) 2015-09-02
CN103443711B (zh) 2016-10-12
SG193961A1 (en) 2013-11-29
US20140017896A1 (en) 2014-01-16
KR20140022022A (ko) 2014-02-21
TW201307441A (zh) 2013-02-16
JPWO2012132686A1 (ja) 2014-07-24
WO2012132686A1 (ja) 2012-10-04
TWI553042B (zh) 2016-10-11
CN103443711A (zh) 2013-12-11
US9165781B2 (en) 2015-10-20
KR101713689B1 (ko) 2017-03-08

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