SG10201509068WA - Monolithic integrated semiconductor structure - Google Patents

Monolithic integrated semiconductor structure

Info

Publication number
SG10201509068WA
SG10201509068WA SG10201509068WA SG10201509068WA SG10201509068WA SG 10201509068W A SG10201509068W A SG 10201509068WA SG 10201509068W A SG10201509068W A SG 10201509068WA SG 10201509068W A SG10201509068W A SG 10201509068WA SG 10201509068W A SG10201509068W A SG 10201509068WA
Authority
SG
Singapore
Prior art keywords
semiconductor structure
integrated semiconductor
monolithic integrated
monolithic
semiconductor
Prior art date
Application number
SG10201509068WA
Inventor
Bernadette Kunert
Original Assignee
Nasp Iii V Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nasp Iii V Gmbh filed Critical Nasp Iii V Gmbh
Publication of SG10201509068WA publication Critical patent/SG10201509068WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02466—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201509068WA 2011-07-12 2012-04-25 Monolithic integrated semiconductor structure SG10201509068WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011107657A DE102011107657A1 (en) 2011-07-12 2011-07-12 Monolithic integrated semiconductor structure

Publications (1)

Publication Number Publication Date
SG10201509068WA true SG10201509068WA (en) 2015-12-30

Family

ID=46598332

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201509068WA SG10201509068WA (en) 2011-07-12 2012-04-25 Monolithic integrated semiconductor structure

Country Status (11)

Country Link
US (2) US9196481B2 (en)
EP (2) EP3893267A3 (en)
JP (1) JP6057096B2 (en)
KR (2) KR101970841B1 (en)
CN (2) CN108346556A (en)
CA (2) CA3040529C (en)
DE (1) DE102011107657A1 (en)
HK (1) HK1258998A1 (en)
SG (1) SG10201509068WA (en)
TW (1) TWI570774B (en)
WO (1) WO2013007229A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011107657A1 (en) * 2011-07-12 2013-01-17 Nasp Iii/V Gmbh Monolithic integrated semiconductor structure
US10388223B2 (en) * 2016-06-30 2019-08-20 Apple Inc. System and method for voltage and current sensing for compensation in an electronic display via analog front end
KR20180050174A (en) * 2016-11-04 2018-05-14 삼성전자주식회사 Electronic device and controlling method thereof
WO2019224966A1 (en) * 2018-05-24 2019-11-28 三菱電機株式会社 Method for producing group iii-v compound semiconductor device

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DE3676019D1 (en) 1985-09-03 1991-01-17 Daido Steel Co Ltd EPITACTIC GALLIUM ARSENIDE SEMICONDUCTOR DISC AND METHOD FOR THEIR PRODUCTION.
JPH01100976A (en) * 1987-10-14 1989-04-19 Daido Steel Co Ltd Manufacture of semiconductor element
JPH0654761B2 (en) * 1987-10-16 1994-07-20 大同特殊鋼株式会社 Semiconductor device
JPH02170413A (en) * 1988-12-22 1990-07-02 Fujitsu Ltd Compound semiconductor device
JPH02239614A (en) * 1989-03-13 1990-09-21 Fujitsu Ltd Hetero-epitaxial growth method
JPH03145787A (en) * 1989-10-31 1991-06-20 Furukawa Electric Co Ltd:The Semiconductor laser element
WO1994010707A1 (en) * 1992-11-05 1994-05-11 Siemens Aktiengesellschaft Highly absorbent solar cell and production process
US6188090B1 (en) * 1995-08-31 2001-02-13 Fujitsu Limited Semiconductor device having a heteroepitaxial substrate
JP3169057B2 (en) * 1996-07-15 2001-05-21 日本電気株式会社 Method for growing compound semiconductor layer
US6017829A (en) 1997-04-01 2000-01-25 Micron Technology, Inc. Implanted conductor and methods of making
US6835962B2 (en) * 2001-08-01 2004-12-28 Showa Denko Kabushiki Kaisha Stacked layer structure, light-emitting device, lamp, and light source unit
JP3557571B2 (en) * 2001-08-01 2004-08-25 昭和電工株式会社 Light-emitting element laminated structure, light-emitting element, lamp and light source
TW577183B (en) * 2002-12-13 2004-02-21 Vtera Technology Inc High lattice matched light emitting device
WO2005053125A1 (en) 2003-11-25 2005-06-09 Philipps-Universität Marburg Optically pumped semiconductor devices for generating radiation, the production thereof and method for compensating strain in the series of layers integrated in said devices
US7384829B2 (en) * 2004-07-23 2008-06-10 International Business Machines Corporation Patterned strained semiconductor substrate and device
DE102005004582A1 (en) * 2005-01-26 2006-07-27 Philipps-Universität Marburg III/V Semiconductor, useful to prepare e.g. luminescence diode, vertical external cavity surface emitting laser diode, modulator structure or detector structure, comprises a semiconducting metal composition
WO2006079333A2 (en) * 2005-01-26 2006-08-03 Philipps Universität Marburg Iii/v semiconductor
EP2595176B1 (en) * 2005-05-17 2020-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
US7851780B2 (en) * 2006-08-02 2010-12-14 Intel Corporation Semiconductor buffer architecture for III-V devices on silicon substrates
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DE102008059044B4 (en) * 2008-11-26 2013-08-22 Siltronic Ag A method of polishing a semiconductor wafer with a strained-relaxed Si1-xGex layer
DE102011107657A1 (en) * 2011-07-12 2013-01-17 Nasp Iii/V Gmbh Monolithic integrated semiconductor structure

Also Published As

Publication number Publication date
CN103828020A (en) 2014-05-28
CA3040529C (en) 2021-05-25
KR101970841B1 (en) 2019-04-19
DE102011107657A1 (en) 2013-01-17
EP3893267A2 (en) 2021-10-13
CA2840897A1 (en) 2013-01-17
KR20140045425A (en) 2014-04-16
KR20190040359A (en) 2019-04-17
US20130015503A1 (en) 2013-01-17
WO2013007229A1 (en) 2013-01-17
KR102107346B1 (en) 2020-05-07
EP2732459A1 (en) 2014-05-21
US9196481B2 (en) 2015-11-24
TW201303968A (en) 2013-01-16
WO2013007229A9 (en) 2013-03-07
CN108346556A (en) 2018-07-31
EP3893267A3 (en) 2021-12-15
TWI570774B (en) 2017-02-11
CA2840897C (en) 2019-06-11
JP2014526145A (en) 2014-10-02
HK1258998A1 (en) 2019-11-22
CN103828020B (en) 2018-01-26
US20160133709A1 (en) 2016-05-12
CA3040529A1 (en) 2013-01-17
JP6057096B2 (en) 2017-01-11
US9865689B2 (en) 2018-01-09

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