SG10201508634SA - System and method for detecting a process point in multi-mode pulse processes - Google Patents

System and method for detecting a process point in multi-mode pulse processes

Info

Publication number
SG10201508634SA
SG10201508634SA SG10201508634SA SG10201508634SA SG10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA SG 10201508634S A SG10201508634S A SG 10201508634SA
Authority
SG
Singapore
Prior art keywords
detecting
process point
mode pulse
pulse processes
processes
Prior art date
Application number
SG10201508634SA
Other languages
English (en)
Inventor
Kabouzi Yassine
Luque Jorge
D Bailey Andrew Iii
Derya Tetiker Mehmet
Subramanian Ramkumar
Yamaguchi Yoko
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201508634SA publication Critical patent/SG10201508634SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
SG10201508634SA 2014-10-20 2015-10-19 System and method for detecting a process point in multi-mode pulse processes SG10201508634SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes

Publications (1)

Publication Number Publication Date
SG10201508634SA true SG10201508634SA (en) 2016-05-30

Family

ID=54337130

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201508634SA SG10201508634SA (en) 2014-10-20 2015-10-19 System and method for detecting a process point in multi-mode pulse processes

Country Status (7)

Country Link
US (2) US9640371B2 (enrdf_load_stackoverflow)
EP (1) EP3012855B1 (enrdf_load_stackoverflow)
JP (1) JP2016082233A (enrdf_load_stackoverflow)
KR (1) KR102623688B1 (enrdf_load_stackoverflow)
CN (2) CN105679688B (enrdf_load_stackoverflow)
SG (1) SG10201508634SA (enrdf_load_stackoverflow)
TW (1) TWI679671B (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
JP6356615B2 (ja) * 2015-02-06 2018-07-11 東芝メモリ株式会社 半導体製造装置および半導体製造方法
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
WO2019152362A1 (en) 2018-01-30 2019-08-08 Lam Research Corporation Tin oxide mandrels in patterning
US11209478B2 (en) * 2018-04-03 2021-12-28 Applied Materials, Inc. Pulse system verification
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
US11551938B2 (en) * 2019-06-27 2023-01-10 Lam Research Corporation Alternating etch and passivation process
JP7454971B2 (ja) * 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
CN119856266A (zh) * 2022-09-08 2025-04-18 朗姆研究公司 半导体设备的状态的多传感器确定

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3630931B2 (ja) * 1996-08-29 2005-03-23 富士通株式会社 プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
JPH11243078A (ja) 1997-02-10 1999-09-07 Hitachi Ltd プラズマ終点判定方法
EP1105703A4 (en) * 1998-04-23 2005-08-03 Sandia Corp METHOD AND DEVICE FOR MONITORING PLASMA MACHINING PROCESSES
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
JP2001044171A (ja) 1999-07-28 2001-02-16 Matsushita Electric Ind Co Ltd エッチング終点検出方法および装置
JP2004134540A (ja) * 2002-10-10 2004-04-30 Dainippon Screen Mfg Co Ltd ドライエッチング装置および終点検出方法
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
DE602004017983D1 (de) 2003-05-09 2009-01-08 Unaxis Usa Inc Endpunkt-Erkennung in einem zeitlich gemultiplexten Verfahren unter Verwendung eines Hüllkurvenalgorithmus
US6905624B2 (en) * 2003-07-07 2005-06-14 Applied Materials, Inc. Interferometric endpoint detection in a substrate etching process
US20050211668A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Methods of processing a substrate with minimal scalloping
FR2880470B1 (fr) 2004-12-31 2007-04-20 Cit Alcatel Dispositif et procede pour le controle de la profondeur de gravure lors de la gravure alternee par plasma de substrats semi-conducteurs
WO2008035678A1 (en) * 2006-09-19 2008-03-27 Tokyo Electron Limited Plasma cleaning process and plasma cvd method
US20080176149A1 (en) * 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
JP4483907B2 (ja) * 2007-08-21 2010-06-16 トヨタ自動車株式会社 車両制御方法および車両制御装置
JP5037303B2 (ja) * 2007-11-08 2012-09-26 株式会社日立ハイテクノロジーズ ｈｉｇｈ−ｋ／メタル構造を備えた半導体素子のプラズマ処理方法
US8009938B2 (en) * 2008-02-29 2011-08-30 Applied Materials, Inc. Advanced process sensing and control using near infrared spectral reflectometry
KR101712348B1 (ko) * 2009-01-31 2017-03-06 어플라이드 머티어리얼스, 인코포레이티드 에칭을 위한 방법 및 장치
JP5170216B2 (ja) * 2010-11-16 2013-03-27 株式会社デンソー プラズマ発生装置
JP2014038875A (ja) * 2010-12-08 2014-02-27 Shimadzu Corp エッチングモニタリング装置
US8501499B2 (en) * 2011-03-28 2013-08-06 Tokyo Electron Limited Adaptive recipe selector
US20130048082A1 (en) * 2011-08-22 2013-02-28 Mirzafer Abatchev System, method and apparatus for real time control of rapid alternating processes (rap)
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
JP5967710B2 (ja) * 2012-09-28 2016-08-10 サムコ株式会社 プラズマエッチングの終点検出方法
WO2014062886A1 (en) * 2012-10-17 2014-04-24 Tokyo Electron Limited Plasma etching endpoint detection using multivariate analysis
CN102931045B (zh) * 2012-10-18 2015-08-26 中微半导体设备(上海)有限公司 刻蚀工艺监控信号的处理方法和刻蚀终点控制方法
JP5384758B2 (ja) * 2013-01-31 2014-01-08 株式会社日立ハイテクノロジーズ プラズマエッチング装置
CN103117202B (zh) 2013-02-19 2015-09-09 中微半导体设备(上海)有限公司 等离子体处理工艺的终点检测装置及方法
CN103954903B (zh) * 2014-05-21 2016-08-17 北京航天控制仪器研究所 一种可实时解算的多模式输出电路测试系统
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes

Also Published As

Publication number Publication date
US20170207070A1 (en) 2017-07-20
TWI679671B (zh) 2019-12-11
KR102623688B1 (ko) 2024-01-10
CN105679688B (zh) 2019-04-16
JP2016082233A (ja) 2016-05-16
EP3012855B1 (en) 2018-07-18
KR20160046309A (ko) 2016-04-28
EP3012855A1 (en) 2016-04-27
TW201630028A (zh) 2016-08-16
CN105679688A (zh) 2016-06-15
US9640371B2 (en) 2017-05-02
US10242849B2 (en) 2019-03-26
CN110246743A (zh) 2019-09-17
CN110246743B (zh) 2022-12-20
US20160111261A1 (en) 2016-04-21

Similar Documents

Publication Publication Date Title
SG10201508634SA (en) System and method for detecting a process point in multi-mode pulse processes
IL250758A0 (en) Transmitter-receiver, sudac, method of signal processing in transmitter-receiver, and methods of signal processing in sudac
SG10202001295TA (en) System and method for a semi-lit market
EP3215865A4 (en) Apparatus and method for detecting objects
ZA201606932B (en) System and method for position detection
GB201400092D0 (en) A method and system for monitoring hand washing
IL256485A (en) Method and system for performing a continuous infusion process
EP3268733A4 (en) Method and system for detecting allergens in a consumable
IL230567A0 (en) Method and system for endophyll implantation in the eye
SG11201608210XA (en) Risk evaluation system for process system, risk evaluation program, and risk evaluation method
EP3158505C0 (en) METHOD AND SYSTEM FOR OBJECT RECOGNITION
SG11201607485PA (en) A method and system for enabling a payment
SG10201500118XA (en) System and method for detecting a defective sample
GB2525757B (en) Underwater detection apparatus, underwater detection method and underwater detection program
ZA201502815B (en) System and method for shunting detection
PL3160819T3 (pl) Urządzenie i sposób rejestracji otoczenia pojazdu szynowego, jak również pojazd szynowy
PL3241023T3 (pl) Sposób i system do oceny produktu
ZA201608151B (en) System and method for inspecting a body
GB2540883B (en) System and method for clamping a work piece
PL2998235T3 (pl) Sposób oraz urządzenie dla monitorowania procesu etykietowania
GB2545895B (en) A method and apparatus for detecting exploits
PL3206509T3 (pl) Sposób i układ do obróbki produktu
SG11201606638YA (en) System and method for detecting a handshake
PL3183717T3 (pl) Urządzenie i sposób przedstawiania informacji strukturalnych o obiekcie technicznym
PL2918996T3 (pl) Sposób przeprowadzania procesu regeneracyjnego dla czujnika gazu