SG10201508025VA - Composition and method for selectively etching gate spacer oxide material - Google Patents
Composition and method for selectively etching gate spacer oxide materialInfo
- Publication number
- SG10201508025VA SG10201508025VA SG10201508025VA SG10201508025VA SG10201508025VA SG 10201508025V A SG10201508025V A SG 10201508025VA SG 10201508025V A SG10201508025V A SG 10201508025VA SG 10201508025V A SG10201508025V A SG 10201508025VA SG 10201508025V A SG10201508025V A SG 10201508025VA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- oxide material
- gate spacer
- selectively etching
- spacer oxide
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 125000006850 spacer group Chemical group 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72377505P | 2005-10-05 | 2005-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201508025VA true SG10201508025VA (en) | 2015-10-29 |
Family
ID=37943369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201508025VA SG10201508025VA (en) | 2005-10-05 | 2006-10-04 | Composition and method for selectively etching gate spacer oxide material |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090032766A1 (zh) |
EP (1) | EP1949424A2 (zh) |
JP (1) | JP2009512195A (zh) |
KR (1) | KR20080059429A (zh) |
CN (1) | CN101496146A (zh) |
SG (1) | SG10201508025VA (zh) |
TW (1) | TW200726826A (zh) |
WO (1) | WO2007044447A2 (zh) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
EP1946358A4 (en) | 2005-11-09 | 2009-03-04 | Advanced Tech Materials | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS WITH LOW DIELECTRICITY CONSTANT MATERIALS |
KR100860367B1 (ko) * | 2006-08-21 | 2008-09-25 | 제일모직주식회사 | 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액 |
US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
US20100163788A1 (en) * | 2006-12-21 | 2010-07-01 | Advanced Technology Materials, Inc. | Liquid cleaner for the removal of post-etch residues |
TWI516573B (zh) * | 2007-02-06 | 2016-01-11 | 安堤格里斯公司 | 選擇性移除TiSiN之組成物及方法 |
US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
KR101429211B1 (ko) * | 2008-01-30 | 2014-08-14 | 삼성전자주식회사 | 금속 실리사이드를 포함하는 트랜지스터 및 그 제조 방법,이를 이용한 반도체 소자 제조 방법. |
JP2011517328A (ja) * | 2008-03-07 | 2011-06-02 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 非選択性酸化物エッチング湿式洗浄組成物および使用方法 |
US20090253268A1 (en) * | 2008-04-03 | 2009-10-08 | Honeywell International, Inc. | Post-contact opening etchants for post-contact etch cleans and methods for fabricating the same |
SG187551A1 (en) | 2010-07-16 | 2013-03-28 | Advanced Tech Materials | Aqueous cleaner for the removal of post-etch residues |
JP6101421B2 (ja) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
TW201716588A (zh) | 2010-08-20 | 2017-05-16 | 恩特葛瑞斯股份有限公司 | 從電子廢棄物再生貴金屬和卑金屬之永續製程 |
CN102443395B (zh) * | 2010-09-30 | 2016-01-20 | 韩国泰科诺赛美材料株式会社 | 用于湿法蚀刻二氧化硅的组合物 |
SG189292A1 (en) | 2010-10-06 | 2013-05-31 | Advanced Tech Materials | Composition and process for selectively etching metal nitrides |
CN102109777B (zh) * | 2010-12-15 | 2012-08-22 | 绵阳艾萨斯电子材料有限公司 | 一种等离子显示用障壁浆料的再生液 |
JP5933950B2 (ja) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 銅または銅合金用エッチング液 |
WO2013052809A1 (en) | 2011-10-05 | 2013-04-11 | Avantor Performance Materials, Inc. | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
SG11201403556WA (en) | 2011-12-28 | 2014-07-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
KR102105381B1 (ko) | 2012-02-15 | 2020-04-29 | 엔테그리스, 아이엔씨. | 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법 |
WO2013170130A1 (en) * | 2012-05-11 | 2013-11-14 | Advanced Technology Materials, Inc. | Formulations for wet etching nipt during silicide fabrication |
SG11201407650VA (en) | 2012-05-18 | 2014-12-30 | Entegris Inc | Composition and process for stripping photoresist from a surface including titanium nitride |
US9536730B2 (en) * | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
JP6363116B2 (ja) | 2013-03-04 | 2018-07-25 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
EP3004287B1 (en) | 2013-06-06 | 2021-08-18 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
US10138117B2 (en) | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
US10428271B2 (en) | 2013-08-30 | 2019-10-01 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
US9048287B1 (en) * | 2013-11-15 | 2015-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for forming semiconductor device structure with floating spacer |
TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge選擇性蝕刻配方及其使用方法 |
SG10201805234YA (en) | 2013-12-20 | 2018-08-30 | Entegris Inc | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
EP3099839A4 (en) | 2014-01-29 | 2017-10-11 | Entegris, Inc. | Post chemical mechanical polishing formulations and method of use |
US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
JP2016012609A (ja) * | 2014-06-27 | 2016-01-21 | 東京エレクトロン株式会社 | エッチング方法 |
US9721867B1 (en) * | 2015-03-18 | 2017-08-01 | National Technology & Engineering Solutions Of Sandia, Llc | Graphene heat dissipating structure |
US10453686B2 (en) * | 2016-08-31 | 2019-10-22 | Tokyo Electron Limited | In-situ spacer reshaping for self-aligned multi-patterning methods and systems |
US10483108B2 (en) * | 2017-04-28 | 2019-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
US11180697B2 (en) * | 2018-11-19 | 2021-11-23 | Versum Materials Us, Llc | Etching solution having silicon oxide corrosion inhibitor and method of using the same |
CN111363550A (zh) * | 2018-12-26 | 2020-07-03 | 上海新阳半导体材料股份有限公司 | 选择性刻蚀液组合物及其制备方法和应用 |
US20200347493A1 (en) | 2019-05-05 | 2020-11-05 | Applied Materials, Inc. | Reverse Selective Deposition |
CN116406477A (zh) | 2020-11-09 | 2023-07-07 | 斯泰拉化工公司 | 微细加工处理剂以及微细加工处理方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4343677A (en) * | 1981-03-23 | 1982-08-10 | Bell Telephone Laboratories, Incorporated | Method for patterning films using reactive ion etching thereof |
US4835112A (en) * | 1988-03-08 | 1989-05-30 | Motorola, Inc. | CMOS salicide process using germanium implantation |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
BR9408274A (pt) * | 1993-12-10 | 1996-12-17 | Armor All Prod Corp | Composição aquosa para limpeza e processo para a limpeza de uma superfície de roda de automóvel ou caminhão |
US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
US6280651B1 (en) * | 1998-12-16 | 2001-08-28 | Advanced Technology Materials, Inc. | Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
US6200891B1 (en) * | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
JP3903215B2 (ja) * | 1998-11-24 | 2007-04-11 | ダイキン工業株式会社 | エッチング液 |
JP2001100436A (ja) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
US6864143B1 (en) | 2000-01-24 | 2005-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Eliminate bridging between gate and source/drain in cobalt salicidation |
EP1138726B1 (en) * | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
US7192860B2 (en) * | 2002-06-20 | 2007-03-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
WO2004094581A1 (en) * | 2003-04-18 | 2004-11-04 | Ekc Technology, Inc. | Aqueous fluoride compositions for cleaning semiconductor devices |
JP4799843B2 (ja) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法 |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
US20060063687A1 (en) * | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
JP4909908B2 (ja) * | 2005-02-25 | 2012-04-04 | イーケイシー テクノロジー インコーポレーテッド | 銅とlow−k誘電材料を有する基板からレジスト、エッチング残渣、及び酸化銅を除去する方法 |
EP1880410A2 (en) * | 2005-05-13 | 2008-01-23 | Sachem, Inc. | Selective wet etching of oxides |
JP2008546036A (ja) * | 2005-06-07 | 2008-12-18 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属および誘電体相溶性の犠牲反射防止コーティング浄化および除去組成物 |
US7491650B2 (en) * | 2005-07-27 | 2009-02-17 | Micron Technology, Inc. | Etch compositions and methods of processing a substrate |
-
2006
- 2006-10-04 EP EP06816297A patent/EP1949424A2/en not_active Withdrawn
- 2006-10-04 KR KR1020087010871A patent/KR20080059429A/ko not_active Application Discontinuation
- 2006-10-04 JP JP2008534677A patent/JP2009512195A/ja not_active Withdrawn
- 2006-10-04 CN CNA2006800456183A patent/CN101496146A/zh active Pending
- 2006-10-04 SG SG10201508025VA patent/SG10201508025VA/en unknown
- 2006-10-04 US US12/089,346 patent/US20090032766A1/en not_active Abandoned
- 2006-10-04 WO PCT/US2006/038931 patent/WO2007044447A2/en active Application Filing
- 2006-10-05 TW TW095137111A patent/TW200726826A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1949424A2 (en) | 2008-07-30 |
WO2007044447A2 (en) | 2007-04-19 |
KR20080059429A (ko) | 2008-06-27 |
CN101496146A (zh) | 2009-07-29 |
WO2007044447A3 (en) | 2009-04-16 |
JP2009512195A (ja) | 2009-03-19 |
TW200726826A (en) | 2007-07-16 |
US20090032766A1 (en) | 2009-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201508025VA (en) | Composition and method for selectively etching gate spacer oxide material | |
EP1968077A4 (en) | MAGNETIC OXIDE MATERIAL | |
EP1895577A4 (en) | CHEMICAL ATTACK COMPOSITION FOR METALLIC MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | |
TWI366917B (en) | Transistor having recess channel and fabrication method thereof | |
EP1909316A4 (en) | TRANSISTOR AND METHOD FOR ITS OPERATION | |
TWI348220B (en) | Planar split-gate high-performance mosfet structure and manufacturing method | |
EP1847176A4 (en) | METHOD AND COMPOSITION FOR CONTROLLING A PLANT PATHOGENIC AGENT | |
EP2038937A4 (en) | SELF-ALIGNED TRIGGER JFET STRUCTURE AND METHOD | |
ZA200803273B (en) | Aerosol composition and method | |
GB2455669B (en) | Stressed field effect transistor and methods for its fabrication | |
EP1915888A4 (en) | METHOD AND COMPOSITION FOR THE ADHESION OF MATERIALS BETWEEN THEM | |
EP1948722A4 (en) | POROUS MATERIAL AND MANUFACTURING METHOD THEREFOR | |
EP2089909A4 (en) | FULLY AND EQUIVALENTLY SILICATED GATE STRUCTURE AND METHOD FOR THEIR EDUCATION | |
EP1970942A4 (en) | SOI SUBSTRATE AND METHOD FOR PRODUCING AN SOI SUBSTRATE | |
TWI318007B (en) | Insulation gate type semiconductor device and its manufacturing method | |
EP2093802A4 (en) | INSULATED GATE TEC AND ITS MANUFACTURING METHOD | |
TWI350590B (en) | Asymmetric semiconductor device and fabrication method | |
PL2054128T3 (pl) | Kompozycja materiałów i sposób jej wytwarzania | |
EP1943671A4 (en) | TYPES OF MULTIPLE DEVICES COMPRISING A REVERSE T-CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING SAME | |
EP2043120A4 (en) | KEYBOARD COVER AND METHOD OF MANUFACTURING THE SAME | |
ZA200800131B (en) | Method and device for the segmentation of regions | |
TWI316296B (en) | Thin-film transistor and fabrication method thereof | |
ZA200805543B (en) | Device and method for forming elongated material | |
EP2118392A4 (en) | SLAB STRUCTURE AND METHOD OF MANUFACTURING THE SAME | |
GB0515702D0 (en) | Building material and method |