SG10201507194VA - Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity - Google Patents

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Info

Publication number
SG10201507194VA
SG10201507194VA SG10201507194VA SG10201507194VA SG10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA SG 10201507194V A SG10201507194V A SG 10201507194VA
Authority
SG
Singapore
Prior art keywords
uniformity
systems
reducing
methods
wafer non
Prior art date
Application number
SG10201507194VA
Other languages
English (en)
Inventor
Kang Hu
Lavoie Adrien
Swaminathan Shankar
Qian Jun
Baldasseroni Chloe
Pasquale Frank
Duvall Andrew
Minshall Ted
Petraglia Jennifer
Leeser Karl
Smith David
Varadarajan Sesha
Augustyniak Edward
Keil Douglas
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201507194VA publication Critical patent/SG10201507194VA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG10201507194VA 2014-09-12 2015-09-08 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity SG10201507194VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462049767P 2014-09-12 2014-09-12
US14/668,174 US9793096B2 (en) 2014-09-12 2015-03-25 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Publications (1)

Publication Number Publication Date
SG10201507194VA true SG10201507194VA (en) 2016-04-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201507194VA SG10201507194VA (en) 2014-09-12 2015-09-08 Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Country Status (6)

Country Link
US (3) US9793096B2 (enrdf_load_stackoverflow)
JP (3) JP6580426B2 (enrdf_load_stackoverflow)
KR (2) KR102333806B1 (enrdf_load_stackoverflow)
CN (1) CN105428194B (enrdf_load_stackoverflow)
SG (1) SG10201507194VA (enrdf_load_stackoverflow)
TW (1) TWI671842B (enrdf_load_stackoverflow)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
CN103403843B (zh) 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
JP6794184B2 (ja) * 2016-08-31 2020-12-02 株式会社日本製鋼所 プラズマ原子層成長装置
US10622243B2 (en) * 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
KR102762543B1 (ko) * 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR101850895B1 (ko) 2017-01-03 2018-04-20 한국표준과학연구원 플라즈마 발생 장치
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
US10851457B2 (en) * 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
WO2020185557A1 (en) * 2019-03-11 2020-09-17 Lam Research Corporation Apparatus for cleaning plasma chambers
CN113924635B (zh) * 2019-05-29 2024-07-05 朗姆研究公司 用于均匀度调整的喷头插件
WO2021011950A1 (en) * 2019-07-17 2021-01-21 Lam Research Corporation Modulation of oxidation profile for substrate processing
CN114258436A (zh) 2019-08-16 2022-03-29 朗姆研究公司 空间可调沉积以在晶片差异弯曲中进行补偿
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
WO2021188597A1 (en) * 2020-03-19 2021-09-23 Lam Research Corporation Showerhead purge collar
CN115362538A (zh) * 2020-04-06 2022-11-18 朗姆研究公司 气体注射器的陶瓷增材制造技术
US20230416918A1 (en) * 2020-11-18 2023-12-28 Lam Research Corporation Pedestal including seal
KR102500678B1 (ko) * 2021-08-25 2023-02-16 주식회사 아이에스티이 기생 플라즈마 방지를 위한 샤워헤드 가스 공급장치
KR102816283B1 (ko) 2022-12-29 2025-06-04 (주)씨엔원 기생 플라즈마 방지를 위해 종방향으로 배치된 다공관 구조체가 구비된 샤워헤드 장치
FI131467B1 (en) * 2023-04-11 2025-05-07 Beneq Oy An atomic layer deposition apparatus and a method for coating a substrate
TW202509282A (zh) * 2023-05-22 2025-03-01 美商蘭姆研究公司 在半導體製造設備中降低噴淋頭阻抗之噴淋頭最佳化

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287968A (enrdf_load_stackoverflow) * 1962-03-15
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
GB9410567D0 (en) * 1994-05-26 1994-07-13 Philips Electronics Uk Ltd Plasma treatment and apparatus in electronic device manufacture
JP3295336B2 (ja) * 1996-03-01 2002-06-24 キヤノン株式会社 マイクロ波プラズマ処理装置およびプラズマ処理方法
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US7004107B1 (en) 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
ATE244780T1 (de) * 1999-12-22 2003-07-15 Aixtron Ag Cvd reaktor und prozesskammer dafür
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US20070187363A1 (en) * 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
KR101020160B1 (ko) 2006-03-03 2011-03-09 엘아이지에이디피 주식회사 플라즈마 처리장치
JP2008078515A (ja) * 2006-09-25 2008-04-03 Tokyo Electron Ltd プラズマ処理方法
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
WO2009104732A1 (ja) * 2008-02-20 2009-08-27 東京エレクトロン株式会社 ガス供給装置
KR101632271B1 (ko) 2008-04-12 2016-06-21 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 처리 장치 및 방법
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
CN103403843B (zh) * 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
US20130071581A1 (en) * 2011-09-20 2013-03-21 Jonghoon Baek Plasma monitoring and minimizing stray capacitance
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9121097B2 (en) * 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
TWI654333B (zh) * 2013-12-18 2019-03-21 美商蘭姆研究公司 具有均勻性折流板之半導體基板處理設備
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9617638B2 (en) * 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9793096B2 (en) * 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
US10407771B2 (en) * 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
CN104409309B (zh) * 2014-12-01 2016-09-21 逢甲大学 大面积等离子体处理装置与均匀等离子体生成方法
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10157755B2 (en) * 2015-10-01 2018-12-18 Lam Research Corporation Purge and pumping structures arranged beneath substrate plane to reduce defects
US9758868B1 (en) * 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
US10403474B2 (en) * 2016-07-11 2019-09-03 Lam Research Corporation Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system
US11335591B2 (en) * 2019-05-28 2022-05-17 Applied Materials, Inc. Thermal process chamber lid with backside pumping

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JP7232864B2 (ja) 2023-03-03
JP6580426B2 (ja) 2019-09-25
US20160079036A1 (en) 2016-03-17
JP6878527B2 (ja) 2021-05-26
KR102333806B1 (ko) 2021-12-01
CN105428194A (zh) 2016-03-23
KR102525777B1 (ko) 2023-04-25
CN105428194B (zh) 2018-06-01
US9793096B2 (en) 2017-10-17
US10665429B2 (en) 2020-05-26
TWI671842B (zh) 2019-09-11
US20200335304A1 (en) 2020-10-22
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TW201626483A (zh) 2016-07-16
US20180068833A1 (en) 2018-03-08
US11127567B2 (en) 2021-09-21
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JP2020025100A (ja) 2020-02-13
JP2016063221A (ja) 2016-04-25

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