SG10201406212QA - Control of impedance of rf return path - Google Patents

Control of impedance of rf return path

Info

Publication number
SG10201406212QA
SG10201406212QA SG10201406212QA SG10201406212QA SG10201406212QA SG 10201406212Q A SG10201406212Q A SG 10201406212QA SG 10201406212Q A SG10201406212Q A SG 10201406212QA SG 10201406212Q A SG10201406212Q A SG 10201406212QA SG 10201406212Q A SG10201406212Q A SG 10201406212QA
Authority
SG
Singapore
Prior art keywords
impedance
control
return path
return
path
Prior art date
Application number
SG10201406212QA
Other languages
English (en)
Inventor
Marakhtanov Alexei
Dhindsa Rajinder
Lucchesi Ken
Albarede Luc
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201406212QA publication Critical patent/SG10201406212QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Networks Using Active Elements (AREA)
  • Burglar Alarm Systems (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201406212QA 2013-10-01 2014-09-30 Control of impedance of rf return path SG10201406212QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/043,525 US9337000B2 (en) 2013-10-01 2013-10-01 Control of impedance of RF return path

Publications (1)

Publication Number Publication Date
SG10201406212QA true SG10201406212QA (en) 2015-05-28

Family

ID=52739422

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201406212QA SG10201406212QA (en) 2013-10-01 2014-09-30 Control of impedance of rf return path
SG10201807580PA SG10201807580PA (en) 2013-10-01 2014-09-30 Control of impedance of rf return path

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201807580PA SG10201807580PA (en) 2013-10-01 2014-09-30 Control of impedance of rf return path

Country Status (5)

Country Link
US (2) US9337000B2 (zh)
KR (3) KR102377961B1 (zh)
CN (2) CN104517794B (zh)
SG (2) SG10201406212QA (zh)
TW (1) TWI650938B (zh)

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US11158488B2 (en) 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
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Also Published As

Publication number Publication date
US10249476B2 (en) 2019-04-02
CN104517794B (zh) 2017-05-24
KR20230038448A (ko) 2023-03-20
CN104517794A (zh) 2015-04-15
CN106941069A (zh) 2017-07-11
KR102509476B1 (ko) 2023-03-10
TW201531024A (zh) 2015-08-01
KR20150039119A (ko) 2015-04-09
SG10201807580PA (en) 2018-10-30
CN106941069B (zh) 2019-06-25
US20160233058A1 (en) 2016-08-11
KR102377961B1 (ko) 2022-03-22
KR20220041062A (ko) 2022-03-31
US9337000B2 (en) 2016-05-10
TWI650938B (zh) 2019-02-11
KR102624267B1 (ko) 2024-01-11
US20150091440A1 (en) 2015-04-02

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