SG10201406211SA - Control of impedance of rf delivery path - Google Patents

Control of impedance of rf delivery path

Info

Publication number
SG10201406211SA
SG10201406211SA SG10201406211SA SG10201406211SA SG10201406211SA SG 10201406211S A SG10201406211S A SG 10201406211SA SG 10201406211S A SG10201406211S A SG 10201406211SA SG 10201406211S A SG10201406211S A SG 10201406211SA SG 10201406211S A SG10201406211S A SG 10201406211SA
Authority
SG
Singapore
Prior art keywords
impedance
control
delivery path
delivery
path
Prior art date
Application number
SG10201406211SA
Inventor
Marakhtanov Alexei
Dhindsa Rajinder
Lucchesi Ken
Albarede Luc
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201406211SA publication Critical patent/SG10201406211SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
SG10201406211SA 2013-10-01 2014-09-30 Control of impedance of rf delivery path SG10201406211SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/043,574 US9401264B2 (en) 2013-10-01 2013-10-01 Control of impedance of RF delivery path

Publications (1)

Publication Number Publication Date
SG10201406211SA true SG10201406211SA (en) 2015-05-28

Family

ID=52739423

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201808034UA SG10201808034UA (en) 2013-10-01 2014-09-30 Control of impedance of rf delivery path
SG10201406211SA SG10201406211SA (en) 2013-10-01 2014-09-30 Control of impedance of rf delivery path

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201808034UA SG10201808034UA (en) 2013-10-01 2014-09-30 Control of impedance of rf delivery path

Country Status (6)

Country Link
US (2) US9401264B2 (en)
JP (1) JP6692598B2 (en)
KR (1) KR102283608B1 (en)
CN (1) CN104517795B (en)
SG (2) SG10201808034UA (en)
TW (1) TWI650792B (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011080035A1 (en) * 2011-07-28 2013-01-31 Hüttinger Elektronik Gmbh + Co. Kg Method and device for protecting passive components connected to a high frequency generator
US9401264B2 (en) * 2013-10-01 2016-07-26 Lam Research Corporation Control of impedance of RF delivery path
US9337000B2 (en) * 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US10153136B2 (en) * 2015-08-04 2018-12-11 Lam Research Corporation Hollow RF feed with coaxial DC power feed
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
CN107316794B (en) * 2016-04-26 2019-10-29 北京北方华创微电子装备有限公司 A kind of semiconductor processing device
EP3280224A1 (en) 2016-08-05 2018-02-07 NXP USA, Inc. Apparatus and methods for detecting defrosting operation completion
EP3280225B1 (en) 2016-08-05 2020-10-07 NXP USA, Inc. Defrosting apparatus with lumped inductive matching network and methods of operation thereof
US10109460B2 (en) * 2016-11-30 2018-10-23 Lam Research Corporation Universal non-invasive chamber impedance measurement system and associated methods
US10879044B2 (en) * 2017-04-07 2020-12-29 Lam Research Corporation Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing
JP6832800B2 (en) * 2017-06-21 2021-02-24 東京エレクトロン株式会社 Plasma processing equipment
US10020168B1 (en) * 2017-07-20 2018-07-10 Lam Research Corporation Systems and methods for increasing efficiency of delivered power of a megahertz radio frequency generator in the presence of a kilohertz radio frequency generator
US10917948B2 (en) 2017-11-07 2021-02-09 Nxp Usa, Inc. Apparatus and methods for defrosting operations in an RF heating system
US10771036B2 (en) * 2017-11-17 2020-09-08 Nxp Usa, Inc. RF heating system with phase detection for impedance network tuning
EP3503679B1 (en) 2017-12-20 2022-07-20 NXP USA, Inc. Defrosting apparatus and methods of operation thereof
EP3547801B1 (en) 2018-03-29 2022-06-08 NXP USA, Inc. Defrosting apparatus and methods of operation thereof
US10916409B2 (en) 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
CN109001500B (en) * 2018-08-21 2024-01-02 淮阴师范学院 Radio frequency device test probe of embedded inductance
US10952289B2 (en) 2018-09-10 2021-03-16 Nxp Usa, Inc. Defrosting apparatus with mass estimation and methods of operation thereof
US11800608B2 (en) 2018-09-14 2023-10-24 Nxp Usa, Inc. Defrosting apparatus with arc detection and methods of operation thereof
CN111162814B (en) * 2018-11-07 2021-01-19 比亚迪股份有限公司 Impedance adjuster, radio frequency circuit and electronic equipment
CN111326389B (en) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 Capacitively coupled plasma etching equipment
US11166352B2 (en) 2018-12-19 2021-11-02 Nxp Usa, Inc. Method for performing a defrosting operation using a defrosting apparatus
US11039511B2 (en) 2018-12-21 2021-06-15 Nxp Usa, Inc. Defrosting apparatus with two-factor mass estimation and methods of operation thereof
TW202108809A (en) 2019-05-06 2021-03-01 美商蘭姆研究公司 Filter box for a substrate processing system
KR102295727B1 (en) * 2019-09-05 2021-08-31 한양대학교 산학협력단 Substrate treating apparatus
CN112530775A (en) * 2019-09-18 2021-03-19 中微半导体设备(上海)股份有限公司 Plasma processing device
US11361941B2 (en) * 2020-06-19 2022-06-14 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR102603678B1 (en) * 2020-10-13 2023-11-21 세메스 주식회사 Apparatus for treating substrate and method for treating apparatus
CN112538619A (en) * 2020-11-05 2021-03-23 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) Control method and device of radio frequency power supply
TW202226897A (en) * 2020-11-06 2022-07-01 日商東京威力科創股份有限公司 Filter circuit
JP2023548929A (en) * 2020-11-18 2023-11-21 ラム リサーチ コーポレーション Uniformity control circuit for impedance matching device
JP7544594B2 (en) 2020-12-25 2024-09-03 株式会社ダイヘン High Frequency Power Supply System
CN113113282B (en) * 2021-04-01 2023-11-14 北京北方华创微电子装备有限公司 Power regulation method for upper electrode power supply and semiconductor process equipment
JP2023050839A (en) 2021-09-30 2023-04-11 株式会社ダイヘン High-frequency power source device
JP2023097863A (en) 2021-12-28 2023-07-10 株式会社ダイヘン High frequency power system
KR102660299B1 (en) * 2021-12-29 2024-04-26 세메스 주식회사 Substrate processing apparatus, harmonics control unit and harmonics contol method

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195045A (en) 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
JPH0555171A (en) * 1991-08-29 1993-03-05 Mitsubishi Electric Corp Method and apparatus for plasma-processing
US6313584B1 (en) * 1998-09-17 2001-11-06 Tokyo Electron Limited Electrical impedance matching system and method
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6242360B1 (en) * 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
DE19933842A1 (en) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Device and method for etching a substrate by means of an inductively coupled plasma
US6335288B1 (en) * 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6887339B1 (en) * 2000-09-20 2005-05-03 Applied Science And Technology, Inc. RF power supply with integrated matching network
JP3670206B2 (en) 2000-11-06 2005-07-13 アルプス電気株式会社 Performance evaluation method, maintenance method, performance management system, performance confirmation system, and plasma processing apparatus for plasma processing apparatus or plasma processing system
US6583572B2 (en) * 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
JP2002316040A (en) * 2001-04-24 2002-10-29 Matsushita Electric Ind Co Ltd Plasma processing method and device
US6727655B2 (en) * 2001-10-26 2004-04-27 Mcchesney Jon Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber
JP3969081B2 (en) * 2001-12-14 2007-08-29 東京エレクトロン株式会社 Plasma processing equipment
TWI279169B (en) 2002-01-24 2007-04-11 Alps Electric Co Ltd Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current
US6703080B2 (en) * 2002-05-20 2004-03-09 Eni Technology, Inc. Method and apparatus for VHF plasma processing with load mismatch reliability and stability
JP4370789B2 (en) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 Plasma processing apparatus and variable impedance means calibration method
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US7083702B2 (en) 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US20050022736A1 (en) 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
JP2005116818A (en) * 2003-10-08 2005-04-28 Nec Yamagata Ltd Plasma generator
US7190119B2 (en) * 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
US7435926B2 (en) * 2004-03-31 2008-10-14 Lam Research Corporation Methods and array for creating a mathematical model of a plasma processing system
US7169256B2 (en) 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
TWI298909B (en) * 2005-04-12 2008-07-11 Nat Univ Tsing Hua An inductively-coupled plasma etch apparatus and a feedback control method thereof
US7342361B2 (en) * 2005-05-11 2008-03-11 Dublin City University Plasma source
US8221580B2 (en) * 2005-10-20 2012-07-17 Applied Materials, Inc. Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops
US8262847B2 (en) * 2006-12-29 2012-09-11 Lam Research Corporation Plasma-enhanced substrate processing method and apparatus
US7777567B2 (en) * 2007-01-25 2010-08-17 Mks Instruments, Inc. RF power amplifier stability network
CN101568997B (en) * 2007-07-04 2011-03-30 佳能安内华股份有限公司 Surface treatment apparatus
TWI492671B (en) * 2007-12-13 2015-07-11 Lam Res Corp Plasma unconfinement sensor and methods thereof
JP2009187673A (en) * 2008-02-01 2009-08-20 Nec Electronics Corp Plasma treatment device and method
SG188141A1 (en) 2008-02-08 2013-03-28 Lam Res Corp A protective coating for a plasma processing chamber part and a method of use
CN102084472B (en) * 2008-07-07 2013-07-03 朗姆研究公司 RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber
US8313664B2 (en) 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
JP2010238730A (en) * 2009-03-30 2010-10-21 Tokyo Electron Ltd Plasma processing apparatus
US9767988B2 (en) * 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
KR102285582B1 (en) * 2009-08-31 2021-08-03 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
US8330432B2 (en) * 2009-12-22 2012-12-11 Advanced Energy Industries, Inc Efficient active source impedance modification of a power amplifier
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9362089B2 (en) * 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
TWI455172B (en) 2010-12-30 2014-10-01 Semes Co Ltd Adjustable capacitor, plasma impedance matching device, plasma impedance mathching method, and substrate treating apparatus
US9059678B2 (en) * 2011-04-28 2015-06-16 Lam Research Corporation TCCT match circuit for plasma etch chambers
DE102011080035A1 (en) 2011-07-28 2013-01-31 Hüttinger Elektronik Gmbh + Co. Kg Method and device for protecting passive components connected to a high frequency generator
US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9508530B2 (en) * 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US8872525B2 (en) 2011-11-21 2014-10-28 Lam Research Corporation System, method and apparatus for detecting DC bias in a plasma processing chamber
US9396908B2 (en) * 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US8898889B2 (en) * 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
JP6276697B2 (en) * 2011-11-23 2018-02-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ambient RF feed and symmetric RF return for symmetric RF supply
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9502216B2 (en) * 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US8932429B2 (en) 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
US9111722B2 (en) * 2012-04-24 2015-08-18 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
US9245720B2 (en) * 2012-06-12 2016-01-26 Lam Research Corporation Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system
US9210790B2 (en) * 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9337000B2 (en) 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US9620334B2 (en) 2012-12-17 2017-04-11 Lam Research Corporation Control of etch rate using modeling, feedback and impedance match
US9401264B2 (en) * 2013-10-01 2016-07-26 Lam Research Corporation Control of impedance of RF delivery path
KR102168064B1 (en) 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus and plasma processing method
US9119283B2 (en) * 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9406485B1 (en) * 2013-12-18 2016-08-02 Surfx Technologies Llc Argon and helium plasma apparatus and methods
US9306533B1 (en) * 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US9595424B2 (en) 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US10109460B2 (en) 2016-11-30 2018-10-23 Lam Research Corporation Universal non-invasive chamber impedance measurement system and associated methods

Also Published As

Publication number Publication date
US10157730B2 (en) 2018-12-18
TWI650792B (en) 2019-02-11
CN104517795A (en) 2015-04-15
TW201528321A (en) 2015-07-16
US20150091441A1 (en) 2015-04-02
KR102283608B1 (en) 2021-07-29
JP6692598B2 (en) 2020-05-13
US20160307738A1 (en) 2016-10-20
KR20150039121A (en) 2015-04-09
SG10201808034UA (en) 2018-10-30
JP2015097197A (en) 2015-05-21
US9401264B2 (en) 2016-07-26
CN104517795B (en) 2017-04-26

Similar Documents

Publication Publication Date Title
SG10201406211SA (en) Control of impedance of rf delivery path
SG10201406212QA (en) Control of impedance of rf return path
IL244259B (en) Delivery of medical devices
IL245211A0 (en) Medicament inhaler
EP2928403A4 (en) Fixed position rf electrode
GB201319150D0 (en) An inhaler
EP2954793A4 (en) Non-combustion-type flavor inhaler
AU351520S (en) Inhaler
GB201314307D0 (en) RF Engery Harvester
HK1218397A1 (en) An inhaler
AU352076S (en) Inhaler
HUE038547T2 (en) Inhaler
EP3042681A4 (en) Inhaler
GB201308679D0 (en) Actuator for an inhaler
LT3632373T (en) Inhaler
HUE053417T2 (en) Inhaler
GB2509571B (en) Coaxial magnetron
EP3632372B8 (en) Inhaler
GB201322677D0 (en) Actuator for an inhaler
GB201319152D0 (en) An Inhaler
EP3024752A4 (en) Deactivation of microwave interactive material
GB201319145D0 (en) An inhaler
GB201319144D0 (en) An Inhaler
EP2974530A4 (en) Microwave treatment of materials