SG10201401324YA - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature fillingInfo
- Publication number
- SG10201401324YA SG10201401324YA SG10201401324YA SG10201401324YA SG10201401324YA SG 10201401324Y A SG10201401324Y A SG 10201401324YA SG 10201401324Y A SG10201401324Y A SG 10201401324YA SG 10201401324Y A SG10201401324Y A SG 10201401324YA SG 10201401324Y A SG10201401324Y A SG 10201401324YA
- Authority
- SG
- Singapore
- Prior art keywords
- composition
- metal plating
- suppressing agent
- void free
- feature filling
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
- 239000011800 void material Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09157542 | 2009-04-07 | ||
| US25632909P | 2009-10-30 | 2009-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201401324YA true SG10201401324YA (en) | 2014-08-28 |
Family
ID=42935667
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201401324YA SG10201401324YA (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| SG2011064094A SG174265A1 (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011064094A SG174265A1 (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20120027948A1 (enExample) |
| EP (1) | EP2417284B1 (enExample) |
| JP (1) | JP5702360B2 (enExample) |
| KR (2) | KR20170034948A (enExample) |
| CN (2) | CN104195602B (enExample) |
| IL (1) | IL215017A (enExample) |
| MY (1) | MY157214A (enExample) |
| RU (1) | RU2542178C2 (enExample) |
| SG (2) | SG10201401324YA (enExample) |
| TW (1) | TWI489012B (enExample) |
| WO (1) | WO2010115756A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | Enthone | 微電子裝置上的銅電沈積 |
| US9869029B2 (en) | 2009-07-30 | 2018-01-16 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| MY156690A (en) | 2010-03-18 | 2016-03-15 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| SG10201510522XA (en) | 2010-12-21 | 2016-01-28 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| MY168658A (en) | 2011-06-01 | 2018-11-28 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| US9243339B2 (en) * | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
| CN104797633B (zh) | 2012-11-09 | 2018-04-24 | 巴斯夫欧洲公司 | 用于金属电镀的包含调平剂的组合物 |
| US10295710B2 (en) | 2012-11-21 | 2019-05-21 | 3M Innovative Properties Company | Optical diffusing films and methods of making same |
| JP6216522B2 (ja) * | 2013-03-14 | 2017-10-18 | 大日本印刷株式会社 | インターポーザー基板の製造方法。 |
| JP6457881B2 (ja) * | 2015-04-22 | 2019-01-23 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| KR102382665B1 (ko) * | 2016-09-22 | 2022-04-08 | 맥더미드 엔쏜 인코포레이티드 | 마이크로전자장치에서의 구리 전착 |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| KR102457310B1 (ko) | 2016-12-20 | 2022-10-20 | 바스프 에스이 | 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 |
| EP3415664B1 (en) * | 2017-06-16 | 2019-09-18 | ATOTECH Deutschland GmbH | Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating |
| KR102641595B1 (ko) | 2017-09-04 | 2024-02-27 | 바스프 에스이 | 평탄화 제제를 포함하는 금속 전기 도금용 조성물 |
| CN112135929B (zh) * | 2018-04-20 | 2023-12-15 | 巴斯夫欧洲公司 | 包含抑制剂的用于锡或锡合金电镀的组合物 |
| US20220356592A1 (en) * | 2019-09-27 | 2022-11-10 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| US20220333262A1 (en) * | 2019-09-27 | 2022-10-20 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN114073170B (zh) * | 2020-04-01 | 2025-01-03 | 住友电气工业株式会社 | 柔性印刷布线板及其制造方法 |
| EP4127025B1 (en) | 2020-04-03 | 2025-10-01 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| EP4409058B1 (en) | 2021-10-01 | 2025-11-05 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| TWI861453B (zh) | 2021-12-21 | 2024-11-11 | 隆輝實業股份有限公司 | 環保無廢料的發泡鞋材製程方法，及其鞋材半成品與鞋體成品 |
| EP4551742A1 (en) | 2022-07-07 | 2025-05-14 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| CN120457244A (zh) | 2022-12-19 | 2025-08-08 | 巴斯夫欧洲公司 | 用于铜纳米孪晶电沉积的组合物 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139425A (en) * | 1978-04-05 | 1979-02-13 | R. O. Hull & Company, Inc. | Composition, plating bath, and method for electroplating tin and/or lead |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| DE19622221A1 (de) * | 1996-06-03 | 1997-12-04 | Henkel Kgaa | Verfahren zur Beschichtung elektrisch leitfähiger Substrate |
| US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| CN1190521C (zh) * | 2002-07-05 | 2005-02-23 | 旺宏电子股份有限公司 | 铜电镀溶液及铜电镀方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TWI400365B (zh) * | 2004-11-12 | 2013-07-01 | Enthone | 微電子裝置上的銅電沈積 |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| JP5503111B2 (ja) * | 2007-04-03 | 2014-05-28 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 金属メッキ組成物および方法 |
| CU23716A1 (es) * | 2008-09-30 | 2011-10-05 | Ct Ingenieria Genetica Biotech | Péptido antagonista de la actividad de la interleucina-15 |
| US8388824B2 (en) * | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
| RU2542219C2 (ru) * | 2009-04-07 | 2015-02-20 | Басф Се | Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности |
-
2010
- 2010-03-29 US US13/259,482 patent/US20120027948A1/en not_active Abandoned
- 2010-03-29 CN CN201410322845.2A patent/CN104195602B/zh active Active
- 2010-03-29 SG SG10201401324YA patent/SG10201401324YA/en unknown
- 2010-03-29 JP JP2012503962A patent/JP5702360B2/ja active Active
- 2010-03-29 EP EP10711239.3A patent/EP2417284B1/en active Active
- 2010-03-29 CN CN201080015460.1A patent/CN102369315B/zh active Active
- 2010-03-29 SG SG2011064094A patent/SG174265A1/en unknown
- 2010-03-29 KR KR1020177007866A patent/KR20170034948A/ko not_active Ceased
- 2010-03-29 RU RU2011144618/02A patent/RU2542178C2/ru not_active IP Right Cessation
- 2010-03-29 KR KR1020117026527A patent/KR20120005023A/ko not_active Ceased
- 2010-03-29 MY MYPI2011004270A patent/MY157214A/en unknown
- 2010-03-29 WO PCT/EP2010/054108 patent/WO2010115756A1/en not_active Ceased
- 2010-04-06 TW TW099110629A patent/TWI489012B/zh active
-
2011
- 2011-09-07 IL IL215017A patent/IL215017A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP5702360B2 (ja) | 2015-04-15 |
| CN104195602B (zh) | 2017-05-31 |
| IL215017A0 (en) | 2011-12-01 |
| CN104195602A (zh) | 2014-12-10 |
| WO2010115756A1 (en) | 2010-10-14 |
| TWI489012B (zh) | 2015-06-21 |
| IL215017A (en) | 2016-03-31 |
| KR20170034948A (ko) | 2017-03-29 |
| KR20120005023A (ko) | 2012-01-13 |
| CN102369315B (zh) | 2014-08-13 |
| RU2542178C2 (ru) | 2015-02-20 |
| EP2417284B1 (en) | 2015-01-14 |
| TW201042096A (en) | 2010-12-01 |
| JP2012522898A (ja) | 2012-09-27 |
| EP2417284A1 (en) | 2012-02-15 |
| MY157214A (en) | 2016-05-13 |
| RU2011144618A (ru) | 2013-05-20 |
| SG174265A1 (en) | 2011-10-28 |
| US20120027948A1 (en) | 2012-02-02 |
| CN102369315A (zh) | 2012-03-07 |
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