IL215017A - Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositing - Google Patents
Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositingInfo
- Publication number
- IL215017A IL215017A IL215017A IL21501711A IL215017A IL 215017 A IL215017 A IL 215017A IL 215017 A IL215017 A IL 215017A IL 21501711 A IL21501711 A IL 21501711A IL 215017 A IL215017 A IL 215017A
- Authority
- IL
- Israel
- Prior art keywords
- coating
- metal
- concealer
- source
- micron sized
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09157542 | 2009-04-07 | ||
| US25632909P | 2009-10-30 | 2009-10-30 | |
| PCT/EP2010/054108 WO2010115756A1 (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL215017A0 IL215017A0 (en) | 2011-12-01 |
| IL215017A true IL215017A (en) | 2016-03-31 |
Family
ID=42935667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL215017A IL215017A (en) | 2009-04-07 | 2011-09-07 | Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositing |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20120027948A1 (enExample) |
| EP (1) | EP2417284B1 (enExample) |
| JP (1) | JP5702360B2 (enExample) |
| KR (2) | KR20120005023A (enExample) |
| CN (2) | CN102369315B (enExample) |
| IL (1) | IL215017A (enExample) |
| MY (1) | MY157214A (enExample) |
| RU (1) | RU2542178C2 (enExample) |
| SG (2) | SG10201401324YA (enExample) |
| TW (1) | TWI489012B (enExample) |
| WO (1) | WO2010115756A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| WO2011012462A2 (en) | 2009-07-30 | 2011-02-03 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| EP2547731B1 (en) | 2010-03-18 | 2014-07-30 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2655457B1 (en) | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| RU2013158459A (ru) | 2011-06-01 | 2015-07-20 | Басф Се | Композиция для электроосаждения металла, содержащая добавку для заполнения снизу вверх переходных отверстий в кремнии и межсоединительных элементов |
| US9243339B2 (en) * | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
| JP6411354B2 (ja) | 2012-11-09 | 2018-10-24 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 平坦化剤を含む金属電気めっきのための組成物 |
| KR102109473B1 (ko) * | 2012-11-21 | 2020-05-12 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 광학 확산 필름 및 이를 제조하는 방법 |
| JP6216522B2 (ja) * | 2013-03-14 | 2017-10-18 | 大日本印刷株式会社 | インターポーザー基板の製造方法。 |
| JP6457881B2 (ja) * | 2015-04-22 | 2019-01-23 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| EP3516096A4 (en) | 2016-09-22 | 2020-10-21 | MacDermid Enthone Inc. | MICROELECTRONIC COPPER ELECTRODEPOSITION |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| KR102457310B1 (ko) | 2016-12-20 | 2022-10-20 | 바스프 에스이 | 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물 |
| EP3415664B1 (en) * | 2017-06-16 | 2019-09-18 | ATOTECH Deutschland GmbH | Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating |
| EP3679179B1 (en) | 2017-09-04 | 2023-10-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| JP2021522410A (ja) | 2018-04-20 | 2021-08-30 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | 抑制剤を含むスズ又はスズ合金電気メッキのための組成物 |
| WO2021058334A1 (en) * | 2019-09-27 | 2021-04-01 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| EP4034697A1 (en) * | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN114073170B (zh) * | 2020-04-01 | 2025-01-03 | 住友电气工业株式会社 | 柔性印刷布线板及其制造方法 |
| IL296980A (en) | 2020-04-03 | 2022-12-01 | Basf Se | The composition for electrodeposition of copper bumps containing a polyaminoamide compensator |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| EP4409058B1 (en) | 2021-10-01 | 2025-11-05 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| TWI861453B (zh) | 2021-12-21 | 2024-11-11 | 隆輝實業股份有限公司 | 環保無廢料的發泡鞋材製程方法，及其鞋材半成品與鞋體成品 |
| EP4551742A1 (en) | 2022-07-07 | 2025-05-14 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| US12557666B2 (en) * | 2022-11-28 | 2026-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package |
| KR20250124348A (ko) | 2022-12-19 | 2025-08-19 | 바스프 에스이 | 구리 나노트윈 전착용 조성물 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139425A (en) * | 1978-04-05 | 1979-02-13 | R. O. Hull & Company, Inc. | Composition, plating bath, and method for electroplating tin and/or lead |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| DE19622221A1 (de) * | 1996-06-03 | 1997-12-04 | Henkel Kgaa | Verfahren zur Beschichtung elektrisch leitfähiger Substrate |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| CN1190521C (zh) * | 2002-07-05 | 2005-02-23 | 旺宏电子股份有限公司 | 铜电镀溶液及铜电镀方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TWI400365B (zh) * | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| US8012334B2 (en) * | 2007-04-03 | 2011-09-06 | Rohm And Haas Electronic Materials Llc | Metal plating compositions and methods |
| CU23716A1 (es) * | 2008-09-30 | 2011-10-05 | Ct Ingenieria Genetica Biotech | Péptido antagonista de la actividad de la interleucina-15 |
| US8388824B2 (en) * | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
| RU2542219C2 (ru) * | 2009-04-07 | 2015-02-20 | Басф Се | Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности |
-
2010
- 2010-03-29 WO PCT/EP2010/054108 patent/WO2010115756A1/en not_active Ceased
- 2010-03-29 EP EP10711239.3A patent/EP2417284B1/en active Active
- 2010-03-29 CN CN201080015460.1A patent/CN102369315B/zh active Active
- 2010-03-29 JP JP2012503962A patent/JP5702360B2/ja active Active
- 2010-03-29 US US13/259,482 patent/US20120027948A1/en not_active Abandoned
- 2010-03-29 KR KR1020117026527A patent/KR20120005023A/ko not_active Ceased
- 2010-03-29 KR KR1020177007866A patent/KR20170034948A/ko not_active Ceased
- 2010-03-29 SG SG10201401324YA patent/SG10201401324YA/en unknown
- 2010-03-29 CN CN201410322845.2A patent/CN104195602B/zh active Active
- 2010-03-29 RU RU2011144618/02A patent/RU2542178C2/ru not_active IP Right Cessation
- 2010-03-29 SG SG2011064094A patent/SG174265A1/en unknown
- 2010-03-29 MY MYPI2011004270A patent/MY157214A/en unknown
- 2010-04-06 TW TW099110629A patent/TWI489012B/zh active
-
2011
- 2011-09-07 IL IL215017A patent/IL215017A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170034948A (ko) | 2017-03-29 |
| SG10201401324YA (en) | 2014-08-28 |
| WO2010115756A1 (en) | 2010-10-14 |
| JP2012522898A (ja) | 2012-09-27 |
| EP2417284B1 (en) | 2015-01-14 |
| SG174265A1 (en) | 2011-10-28 |
| CN104195602A (zh) | 2014-12-10 |
| CN102369315B (zh) | 2014-08-13 |
| MY157214A (en) | 2016-05-13 |
| TWI489012B (zh) | 2015-06-21 |
| RU2011144618A (ru) | 2013-05-20 |
| EP2417284A1 (en) | 2012-02-15 |
| KR20120005023A (ko) | 2012-01-13 |
| IL215017A0 (en) | 2011-12-01 |
| CN104195602B (zh) | 2017-05-31 |
| TW201042096A (en) | 2010-12-01 |
| US20120027948A1 (en) | 2012-02-02 |
| CN102369315A (zh) | 2012-03-07 |
| RU2542178C2 (ru) | 2015-02-20 |
| JP5702360B2 (ja) | 2015-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed |