SE9903497L - Effektförstärkningstransistorer - Google Patents

Effektförstärkningstransistorer

Info

Publication number
SE9903497L
SE9903497L SE9903497A SE9903497A SE9903497L SE 9903497 L SE9903497 L SE 9903497L SE 9903497 A SE9903497 A SE 9903497A SE 9903497 A SE9903497 A SE 9903497A SE 9903497 L SE9903497 L SE 9903497L
Authority
SE
Sweden
Prior art keywords
transistors
transistor
power
telephone set
signals
Prior art date
Application number
SE9903497A
Other languages
Unknown language ( )
English (en)
Other versions
SE9903497D0 (sv
SE522892C2 (sv
Inventor
Jonas Tiren
Jesper Engvall
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9903497A priority Critical patent/SE522892C2/sv
Publication of SE9903497D0 publication Critical patent/SE9903497D0/sv
Priority to US09/671,831 priority patent/US6522203B1/en
Priority to CNB008134375A priority patent/CN1327529C/zh
Priority to EP00968269A priority patent/EP1222693A1/en
Priority to PCT/SE2000/001882 priority patent/WO2001024271A1/en
Priority to AU78210/00A priority patent/AU7821000A/en
Priority to JP2001527361A priority patent/JP4881525B2/ja
Publication of SE9903497L publication Critical patent/SE9903497L/sv
Publication of SE522892C2 publication Critical patent/SE522892C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
SE9903497A 1999-09-28 1999-09-28 En förstärkarkrets för att förstärka signaler SE522892C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9903497A SE522892C2 (sv) 1999-09-28 1999-09-28 En förstärkarkrets för att förstärka signaler
US09/671,831 US6522203B1 (en) 1999-09-28 2000-09-27 Power amplifying transistors
CNB008134375A CN1327529C (zh) 1999-09-28 2000-09-28 通过两个功率晶体管的交织结构来改善放大器电路内的散热
EP00968269A EP1222693A1 (en) 1999-09-28 2000-09-28 Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
PCT/SE2000/001882 WO2001024271A1 (en) 1999-09-28 2000-09-28 Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
AU78210/00A AU7821000A (en) 1999-09-28 2000-09-28 Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
JP2001527361A JP4881525B2 (ja) 1999-09-28 2000-09-28 ２つのパワートランジスタの交互配置した構成による改良した増幅器回路の熱放散

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9903497A SE522892C2 (sv) 1999-09-28 1999-09-28 En förstärkarkrets för att förstärka signaler

Publications (3)

Publication Number Publication Date
SE9903497D0 SE9903497D0 (sv) 1999-09-28
SE9903497L true SE9903497L (sv) 2001-05-28
SE522892C2 SE522892C2 (sv) 2004-03-16

Family

ID=20417175

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9903497A SE522892C2 (sv) 1999-09-28 1999-09-28 En förstärkarkrets för att förstärka signaler

Country Status (7)

Country Link
US (1) US6522203B1 (sv)
EP (1) EP1222693A1 (sv)
JP (1) JP4881525B2 (sv)
CN (1) CN1327529C (sv)
AU (1) AU7821000A (sv)
SE (1) SE522892C2 (sv)
WO (1) WO2001024271A1 (sv)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004506368A (ja) * 2000-08-07 2004-02-26 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ノイズ及び入力インピーダンス整合増幅器
US6664855B2 (en) * 2001-06-04 2003-12-16 U.S. Monolithics, L.L.C. MMIC driver amplifier having zig-zag RF signal flow
JP2004260364A (ja) * 2003-02-25 2004-09-16 Renesas Technology Corp 半導体装置及び高出力電力増幅装置並びにパソコンカード
SE528473C2 (sv) * 2005-02-28 2006-11-21 Infineon Technologies Ag Monolitiskt integrerad effektförstärkaranordning
JP2006269835A (ja) * 2005-03-24 2006-10-05 Nec Electronics Corp 半導体装置
US20070235867A1 (en) * 2006-04-06 2007-10-11 Mokhtar Fuad B H Field effect transistor with interleaved layout
GB0612800D0 (en) * 2006-06-28 2006-08-09 Filtronic Compound Semiconduct A field effect transistor and a linear antenna switch arm
JP5283943B2 (ja) * 2008-03-25 2013-09-04 株式会社東芝 半導体装置
CN102034823B (zh) * 2009-09-30 2013-01-02 意法半导体研发(深圳)有限公司 用于spu和stog良好性能的功率晶体管的布局和焊盘布图规划
CN102281220B (zh) 2010-06-12 2015-04-29 华为技术有限公司 数据流处理方法、设备及系统
CN102130657A (zh) * 2010-09-14 2011-07-20 华为技术有限公司 一种功率放大器、不对称达赫笛功率放大设备和基站
US9252147B2 (en) * 2013-08-05 2016-02-02 Qualcomm Incorporated Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chip
US9780090B2 (en) * 2015-10-19 2017-10-03 Nxp Usa, Inc. Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication
KR20180110449A (ko) * 2017-03-29 2018-10-10 삼성전기주식회사 전력 증폭기

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276516A (en) 1979-07-26 1981-06-30 National Semiconductor Corporation Thermal stress reduction in IC power transistors
IT1215230B (it) 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
JPH06507775A (ja) * 1992-03-13 1994-09-01 モトローラ・インコーポレイテッド 電力増幅器結合回路
JPH11168178A (ja) * 1997-12-04 1999-06-22 Toshiba Corp 集積回路素子
JP2001068556A (ja) * 1999-08-30 2001-03-16 Mobile Communications Tokyo Inc 高周波電力増幅用半導体装置

Also Published As

Publication number Publication date
SE9903497D0 (sv) 1999-09-28
JP2003510934A (ja) 2003-03-18
CN1376310A (zh) 2002-10-23
JP4881525B2 (ja) 2012-02-22
CN1327529C (zh) 2007-07-18
SE522892C2 (sv) 2004-03-16
AU7821000A (en) 2001-04-30
US6522203B1 (en) 2003-02-18
EP1222693A1 (en) 2002-07-17
WO2001024271A1 (en) 2001-04-05

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