SE8502974L - COMPOSITION TRANSISTOR WITH SOME COMMON COLLECTOR USING SEMICONDUCTOR SUBSTANCES AND EMITTER AREA uniformly distributed - Google Patents

COMPOSITION TRANSISTOR WITH SOME COMMON COLLECTOR USING SEMICONDUCTOR SUBSTANCES AND EMITTER AREA uniformly distributed

Info

Publication number
SE8502974L
SE8502974L SE8502974A SE8502974A SE8502974L SE 8502974 L SE8502974 L SE 8502974L SE 8502974 A SE8502974 A SE 8502974A SE 8502974 A SE8502974 A SE 8502974A SE 8502974 L SE8502974 L SE 8502974L
Authority
SE
Sweden
Prior art keywords
semiconductor substrate
areas
common collector
transistor
uniformly distributed
Prior art date
Application number
SE8502974A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE448329B (en
SE8502974D0 (en
Inventor
Evgeny Ivanovich Lapitsky
Anatoly Iosifovich Tarasevich
Vladimir Alexandrovich Semin
Vladimir Iliich Kabanets
Original Assignee
Evgeny Ivanovich Lapitsky
Anatoly Iosifovich Tarasevich
Vladimir Alexandrovich Semin
Vladimir Iliich Kabanets
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evgeny Ivanovich Lapitsky, Anatoly Iosifovich Tarasevich, Vladimir Alexandrovich Semin, Vladimir Iliich Kabanets filed Critical Evgeny Ivanovich Lapitsky
Publication of SE8502974D0 publication Critical patent/SE8502974D0/en
Publication of SE8502974L publication Critical patent/SE8502974L/en
Publication of SE448329B publication Critical patent/SE448329B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

The proposal is a composite transistor on a semiconductor substrate (1), which substrate forms the common collector and has a multiplicity of base and emitter areas (3, 4 and 5, 6), which are linked to form a plurality of transistor stages. The individual base and emitter areas (3, 4 and 5, 6) are distributed evenly over the surface of the semiconductor substrate (1). The areas of the same type (3, 4 and 5, 6) in each transistor stage are connected to each other in parallel by the current supply contacts (8, 9, 10) in the direction from the periphery to the centre of the semiconductor substrate (1). The individual base areas (3, 4) are insulated from each other by the common collector area which emerges on the surface of the semiconductor substrate (1). In the centre of the semiconductor substrate (1) is an assembly contact (13) leading to the individual emitter areas (6). The assembly contacts (14, 15, 16, 17) connected to the individual base areas (3) are distributed evenly over the peripheral surface of the semiconductor substrate (1). The invention can be used more effectively for amplifiers, regulated power supplies, switching circuits and other control and automation devices. <IMAGE>
SE8502974A 1985-06-12 1985-06-14 COMPOSITION TRANSISTOR WITH SOME COMMON COLLECTOR USING SEMICONDUCTOR SUBSTANCES AND WITH BASES AND EMITTER AREA uniformly distributed SE448329B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853521059 DE3521059A1 (en) 1985-06-12 1985-06-12 Composite transistor

Publications (3)

Publication Number Publication Date
SE8502974D0 SE8502974D0 (en) 1985-06-14
SE8502974L true SE8502974L (en) 1986-12-15
SE448329B SE448329B (en) 1987-02-09

Family

ID=6273080

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8502974A SE448329B (en) 1985-06-12 1985-06-14 COMPOSITION TRANSISTOR WITH SOME COMMON COLLECTOR USING SEMICONDUCTOR SUBSTANCES AND WITH BASES AND EMITTER AREA uniformly distributed

Country Status (4)

Country Link
DE (1) DE3521059A1 (en)
FR (1) FR2583924B1 (en)
NL (1) NL8501980A (en)
SE (1) SE448329B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787219B2 (en) * 1986-09-09 1995-09-20 三菱電機株式会社 Semiconductor memory device
DE3807162A1 (en) * 1987-07-02 1989-01-12 Mitsubishi Electric Corp SEMICONDUCTOR MEMORY DEVICE
US5023693A (en) * 1989-06-06 1991-06-11 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor with current sensing function

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297239C2 (en) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg POWER TRANSISTOR
DE1514008B2 (en) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg AREA TRANSISTOR
US3544860A (en) * 1968-04-11 1970-12-01 Rca Corp Integrated power output circuit
US3629623A (en) * 1968-11-01 1971-12-21 Nippon Denso Co Composite semiconductor device and semiconductor voltage regulator device for vehicles

Also Published As

Publication number Publication date
FR2583924A1 (en) 1986-12-26
SE448329B (en) 1987-02-09
FR2583924B1 (en) 1988-05-27
SE8502974D0 (en) 1985-06-14
DE3521059A1 (en) 1986-12-18
NL8501980A (en) 1987-02-02

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