FR2583924B1 - COMPOSITE TRANSISTOR - Google Patents
COMPOSITE TRANSISTORInfo
- Publication number
- FR2583924B1 FR2583924B1 FR8509334A FR8509334A FR2583924B1 FR 2583924 B1 FR2583924 B1 FR 2583924B1 FR 8509334 A FR8509334 A FR 8509334A FR 8509334 A FR8509334 A FR 8509334A FR 2583924 B1 FR2583924 B1 FR 2583924B1
- Authority
- FR
- France
- Prior art keywords
- composite transistor
- transistor
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002131 composite material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853521059 DE3521059A1 (en) | 1985-06-12 | 1985-06-12 | Composite transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2583924A1 FR2583924A1 (en) | 1986-12-26 |
FR2583924B1 true FR2583924B1 (en) | 1988-05-27 |
Family
ID=6273080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8509334A Expired FR2583924B1 (en) | 1985-06-12 | 1985-06-19 | COMPOSITE TRANSISTOR |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE3521059A1 (en) |
FR (1) | FR2583924B1 (en) |
NL (1) | NL8501980A (en) |
SE (1) | SE448329B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0787219B2 (en) * | 1986-09-09 | 1995-09-20 | 三菱電機株式会社 | Semiconductor memory device |
DE3807162A1 (en) * | 1987-07-02 | 1989-01-12 | Mitsubishi Electric Corp | SEMICONDUCTOR MEMORY DEVICE |
US5023693A (en) * | 1989-06-06 | 1991-06-11 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor with current sensing function |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1297239C2 (en) * | 1964-11-11 | 1975-07-17 | Deutsche Itt Industries Gmbh, 7800 Freiburg | POWER TRANSISTOR |
DE1514008B2 (en) * | 1965-04-22 | 1972-12-07 | Deutsche Itt Industries Gmbh, 7800 Freiburg | AREA TRANSISTOR |
US3544860A (en) * | 1968-04-11 | 1970-12-01 | Rca Corp | Integrated power output circuit |
US3629623A (en) * | 1968-11-01 | 1971-12-21 | Nippon Denso Co | Composite semiconductor device and semiconductor voltage regulator device for vehicles |
-
1985
- 1985-06-12 DE DE19853521059 patent/DE3521059A1/en not_active Withdrawn
- 1985-06-14 SE SE8502974A patent/SE448329B/en not_active IP Right Cessation
- 1985-06-19 FR FR8509334A patent/FR2583924B1/en not_active Expired
- 1985-07-10 NL NL8501980A patent/NL8501980A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2583924A1 (en) | 1986-12-26 |
NL8501980A (en) | 1987-02-02 |
DE3521059A1 (en) | 1986-12-18 |
SE448329B (en) | 1987-02-09 |
SE8502974D0 (en) | 1985-06-14 |
SE8502974L (en) | 1986-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |