FR2583924B1 - COMPOSITE TRANSISTOR - Google Patents

COMPOSITE TRANSISTOR

Info

Publication number
FR2583924B1
FR2583924B1 FR8509334A FR8509334A FR2583924B1 FR 2583924 B1 FR2583924 B1 FR 2583924B1 FR 8509334 A FR8509334 A FR 8509334A FR 8509334 A FR8509334 A FR 8509334A FR 2583924 B1 FR2583924 B1 FR 2583924B1
Authority
FR
France
Prior art keywords
composite transistor
transistor
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8509334A
Other languages
French (fr)
Other versions
FR2583924A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAPITSKY EVGENY
Original Assignee
LAPITSKY EVGENY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAPITSKY EVGENY filed Critical LAPITSKY EVGENY
Publication of FR2583924A1 publication Critical patent/FR2583924A1/en
Application granted granted Critical
Publication of FR2583924B1 publication Critical patent/FR2583924B1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR8509334A 1985-06-12 1985-06-19 COMPOSITE TRANSISTOR Expired FR2583924B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853521059 DE3521059A1 (en) 1985-06-12 1985-06-12 Composite transistor

Publications (2)

Publication Number Publication Date
FR2583924A1 FR2583924A1 (en) 1986-12-26
FR2583924B1 true FR2583924B1 (en) 1988-05-27

Family

ID=6273080

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8509334A Expired FR2583924B1 (en) 1985-06-12 1985-06-19 COMPOSITE TRANSISTOR

Country Status (4)

Country Link
DE (1) DE3521059A1 (en)
FR (1) FR2583924B1 (en)
NL (1) NL8501980A (en)
SE (1) SE448329B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787219B2 (en) * 1986-09-09 1995-09-20 三菱電機株式会社 Semiconductor memory device
DE3807162A1 (en) * 1987-07-02 1989-01-12 Mitsubishi Electric Corp SEMICONDUCTOR MEMORY DEVICE
US5023693A (en) * 1989-06-06 1991-06-11 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor with current sensing function

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297239C2 (en) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg POWER TRANSISTOR
DE1514008B2 (en) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg AREA TRANSISTOR
US3544860A (en) * 1968-04-11 1970-12-01 Rca Corp Integrated power output circuit
US3629623A (en) * 1968-11-01 1971-12-21 Nippon Denso Co Composite semiconductor device and semiconductor voltage regulator device for vehicles

Also Published As

Publication number Publication date
FR2583924A1 (en) 1986-12-26
NL8501980A (en) 1987-02-02
DE3521059A1 (en) 1986-12-18
SE448329B (en) 1987-02-09
SE8502974D0 (en) 1985-06-14
SE8502974L (en) 1986-12-15

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Legal Events

Date Code Title Description
ST Notification of lapse