SE8002073L - Linjert halvledarmotstand - Google Patents

Linjert halvledarmotstand

Info

Publication number
SE8002073L
SE8002073L SE8002073A SE8002073A SE8002073L SE 8002073 L SE8002073 L SE 8002073L SE 8002073 A SE8002073 A SE 8002073A SE 8002073 A SE8002073 A SE 8002073A SE 8002073 L SE8002073 L SE 8002073L
Authority
SE
Sweden
Prior art keywords
lined
semiconductor resistance
semiconductor
resistance
lined semiconductor
Prior art date
Application number
SE8002073A
Other languages
English (en)
Swedish (sv)
Inventor
M J Saari
Original Assignee
Trw Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trw Inc filed Critical Trw Inc
Publication of SE8002073L publication Critical patent/SE8002073L/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/43Resistors having PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66Digital/analogue converters
    • H03M1/74Simultaneous conversion
    • H03M1/78Simultaneous conversion using ladder network
    • H03M1/785Simultaneous conversion using ladder network using resistors, i.e. R-2R ladders
SE8002073A 1979-03-19 1980-03-17 Linjert halvledarmotstand SE8002073L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2182979A 1979-03-19 1979-03-19

Publications (1)

Publication Number Publication Date
SE8002073L true SE8002073L (sv) 1980-09-20

Family

ID=21806386

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8002073A SE8002073L (sv) 1979-03-19 1980-03-17 Linjert halvledarmotstand

Country Status (6)

Country Link
JP (1) JPS55146957A (enrdf_load_stackoverflow)
CA (1) CA1122721A (enrdf_load_stackoverflow)
DE (1) DE3009042A1 (enrdf_load_stackoverflow)
FR (1) FR2452180A1 (enrdf_load_stackoverflow)
GB (1) GB2044998A (enrdf_load_stackoverflow)
SE (1) SE8002073L (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2054997B (en) * 1979-05-23 1984-01-18 Suwa Seikosha Kk Temperature detecting circuit
JPS57162356A (en) * 1981-03-30 1982-10-06 Toshiba Corp Integrated circuit device
JPS58141551A (ja) * 1982-02-17 1983-08-22 Nec Corp 半導体装置
JPS59229857A (ja) * 1983-06-07 1984-12-24 Rohm Co Ltd 抵抗回路
JPS60139306U (ja) * 1984-02-25 1985-09-14 株式会社村田製作所 同軸共振器を用いた高周波装置
DE3443773A1 (de) * 1984-11-30 1986-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierter spannungsteiler
DE3526461A1 (de) * 1985-07-24 1987-01-29 Telefunken Electronic Gmbh Widerstandskette
JPS61172364A (ja) * 1985-09-27 1986-08-04 Nec Corp 定電圧回路を形成した半導体装置
JPS63244765A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 拡散抵抗を有する集積回路
US6593869B1 (en) * 2002-03-28 2003-07-15 Hrl Laboratories, Llc High efficiency, high output drive current switch with application to digital to analog conversion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351505A1 (fr) * 1976-05-13 1977-12-09 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Also Published As

Publication number Publication date
JPS55146957A (en) 1980-11-15
GB2044998A (en) 1980-10-22
JPS6356707B2 (enrdf_load_stackoverflow) 1988-11-09
CA1122721A (en) 1982-04-27
DE3009042A1 (de) 1980-10-02
FR2452180A1 (fr) 1980-10-17

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