SE7906202L - thyristor - Google Patents
thyristorInfo
- Publication number
- SE7906202L SE7906202L SE7906202A SE7906202A SE7906202L SE 7906202 L SE7906202 L SE 7906202L SE 7906202 A SE7906202 A SE 7906202A SE 7906202 A SE7906202 A SE 7906202A SE 7906202 L SE7906202 L SE 7906202L
- Authority
- SE
- Sweden
- Prior art keywords
- thyristor
- breakover
- current
- voltage
- limiting means
- Prior art date
Links
- 241000183290 Scleropages leichardti Species 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
TO ALL WHOM IT MAY CONCERN: BE IT KNOWN that I, VICTOR A. K. TEMPLE, a citizen of Canada, residing in the city of Clifton Park, county of Saratoga, state of New York, have invented certain new and useful improvements in a THYRISTOR WITH VOLTAGE BREAKOVER CURRENT CONTROL AND METHOD of which the following is the specification. A thyristor of the type having a localized voltage breakover region is provided with current limiting means for controlling the current through the device during initial voltage breakover. The thyristor base zone is divided into two at least partially separated base portions, one of which is in the vicinity of the localized breakover region. The other base portion is in the main current-carrying part of the thyristor in contact with the main emitter. The two base portions are electrically connected by current limiting means. When breakover occurs by way of a forward anode-cathode voltage which exceeds the thyristor forward breakover voltage, the rise in current is limited by the current limiting means.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US92656478A | 1978-07-20 | 1978-07-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7906202L true SE7906202L (en) | 1980-01-21 |
SE449538B SE449538B (en) | 1987-05-04 |
Family
ID=25453381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7906202A SE449538B (en) | 1978-07-20 | 1979-07-19 | TURISTOR DEVICE AND SET FOR ITS MANUFACTURING |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS6040192B2 (en) |
CA (1) | CA1114522A (en) |
DE (1) | DE2928685A1 (en) |
SE (1) | SE449538B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
US4555845A (en) * | 1982-10-13 | 1985-12-03 | Westinghouse Electric Corp. | Temperature stable self-protected thyristor and method of producing |
US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
US4516315A (en) * | 1983-05-09 | 1985-05-14 | Westinghouse Electric Corp. | Method of making a self-protected thyristor |
IT1212767B (en) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | SEMICONDUCTOR OVERVOLTAGE SUPPRESSOR WITH PREDETINABLE IGNITION VOLTAGE WITH PRECISION. |
CA1272811A (en) * | 1985-04-24 | 1990-08-14 | Hitachi, Ltd. | Semiconductor device of overvoltage self-protection type |
-
1979
- 1979-07-16 DE DE19792928685 patent/DE2928685A1/en not_active Withdrawn
- 1979-07-19 SE SE7906202A patent/SE449538B/en not_active IP Right Cessation
- 1979-07-20 CA CA332,272A patent/CA1114522A/en not_active Expired
- 1979-07-20 JP JP9249379A patent/JPS6040192B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6040192B2 (en) | 1985-09-10 |
JPS5515300A (en) | 1980-02-02 |
SE449538B (en) | 1987-05-04 |
DE2928685A1 (en) | 1980-01-31 |
CA1114522A (en) | 1981-12-15 |
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Legal Events
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