SE7906202L - thyristor - Google Patents

thyristor

Info

Publication number
SE7906202L
SE7906202L SE7906202A SE7906202A SE7906202L SE 7906202 L SE7906202 L SE 7906202L SE 7906202 A SE7906202 A SE 7906202A SE 7906202 A SE7906202 A SE 7906202A SE 7906202 L SE7906202 L SE 7906202L
Authority
SE
Sweden
Prior art keywords
thyristor
breakover
current
voltage
limiting means
Prior art date
Application number
SE7906202A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE449538B (en
Inventor
V A K Temple
Original Assignee
Electric Power Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electric Power Res Inst filed Critical Electric Power Res Inst
Publication of SE7906202L publication Critical patent/SE7906202L/en
Publication of SE449538B publication Critical patent/SE449538B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

TO ALL WHOM IT MAY CONCERN: BE IT KNOWN that I, VICTOR A. K. TEMPLE, a citizen of Canada, residing in the city of Clifton Park, county of Saratoga, state of New York, have invented certain new and useful improvements in a THYRISTOR WITH VOLTAGE BREAKOVER CURRENT CONTROL AND METHOD of which the following is the specification. A thyristor of the type having a localized voltage breakover region is provided with current limiting means for controlling the current through the device during initial voltage breakover. The thyristor base zone is divided into two at least partially separated base portions, one of which is in the vicinity of the localized breakover region. The other base portion is in the main current-carrying part of the thyristor in contact with the main emitter. The two base portions are electrically connected by current limiting means. When breakover occurs by way of a forward anode-cathode voltage which exceeds the thyristor forward breakover voltage, the rise in current is limited by the current limiting means.
SE7906202A 1978-07-20 1979-07-19 TURISTOR DEVICE AND SET FOR ITS MANUFACTURING SE449538B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92656478A 1978-07-20 1978-07-20

Publications (2)

Publication Number Publication Date
SE7906202L true SE7906202L (en) 1980-01-21
SE449538B SE449538B (en) 1987-05-04

Family

ID=25453381

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7906202A SE449538B (en) 1978-07-20 1979-07-19 TURISTOR DEVICE AND SET FOR ITS MANUFACTURING

Country Status (4)

Country Link
JP (1) JPS6040192B2 (en)
CA (1) CA1114522A (en)
DE (1) DE2928685A1 (en)
SE (1) SE449538B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
IE54111B1 (en) * 1982-03-11 1989-06-21 Westinghouse Electric Corp Laser treatment of thyristor to provide overvoltage self-protection
US4555845A (en) * 1982-10-13 1985-12-03 Westinghouse Electric Corp. Temperature stable self-protected thyristor and method of producing
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
US4516315A (en) * 1983-05-09 1985-05-14 Westinghouse Electric Corp. Method of making a self-protected thyristor
IT1212767B (en) * 1983-07-29 1989-11-30 Ates Componenti Elettron SEMICONDUCTOR OVERVOLTAGE SUPPRESSOR WITH PREDETINABLE IGNITION VOLTAGE WITH PRECISION.
CA1272811A (en) * 1985-04-24 1990-08-14 Hitachi, Ltd. Semiconductor device of overvoltage self-protection type

Also Published As

Publication number Publication date
JPS6040192B2 (en) 1985-09-10
JPS5515300A (en) 1980-02-02
SE449538B (en) 1987-05-04
DE2928685A1 (en) 1980-01-31
CA1114522A (en) 1981-12-15

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