JPS5515300A - Thyristor for controlling voltage breakdown current and method of limiting voltage breakdown current - Google Patents
Thyristor for controlling voltage breakdown current and method of limiting voltage breakdown currentInfo
- Publication number
- JPS5515300A JPS5515300A JP9249379A JP9249379A JPS5515300A JP S5515300 A JPS5515300 A JP S5515300A JP 9249379 A JP9249379 A JP 9249379A JP 9249379 A JP9249379 A JP 9249379A JP S5515300 A JPS5515300 A JP S5515300A
- Authority
- JP
- Japan
- Prior art keywords
- voltage breakdown
- breakdown current
- thyristor
- limiting
- controlling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015556 catabolic process Effects 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92656478A | 1978-07-20 | 1978-07-20 | |
| US926564 | 1978-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5515300A true JPS5515300A (en) | 1980-02-02 |
| JPS6040192B2 JPS6040192B2 (en) | 1985-09-10 |
Family
ID=25453381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9249379A Expired JPS6040192B2 (en) | 1978-07-20 | 1979-07-20 | Thyristor for controlling voltage breakdown current and method for limiting voltage breakdown current |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6040192B2 (en) |
| CA (1) | CA1114522A (en) |
| DE (1) | DE2928685A1 (en) |
| SE (1) | SE449538B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59158561A (en) * | 1983-02-18 | 1984-09-08 | ウエスチングハウス エレクトリック コ−ポレ−ション | Thyristor for self-protecting via avalanche from overvoltageand method of producing same |
| JPS6057668A (en) * | 1983-07-29 | 1985-04-03 | エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ | Semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
| IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
| US4555845A (en) * | 1982-10-13 | 1985-12-03 | Westinghouse Electric Corp. | Temperature stable self-protected thyristor and method of producing |
| US4516315A (en) * | 1983-05-09 | 1985-05-14 | Westinghouse Electric Corp. | Method of making a self-protected thyristor |
| CA1272811A (en) * | 1985-04-24 | 1990-08-14 | Hitachi, Ltd. | Semiconductor device of overvoltage self-protection type |
-
1979
- 1979-07-16 DE DE19792928685 patent/DE2928685A1/en not_active Withdrawn
- 1979-07-19 SE SE7906202A patent/SE449538B/en not_active IP Right Cessation
- 1979-07-20 CA CA332,272A patent/CA1114522A/en not_active Expired
- 1979-07-20 JP JP9249379A patent/JPS6040192B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59158561A (en) * | 1983-02-18 | 1984-09-08 | ウエスチングハウス エレクトリック コ−ポレ−ション | Thyristor for self-protecting via avalanche from overvoltageand method of producing same |
| JPS6057668A (en) * | 1983-07-29 | 1985-04-03 | エス・ジ−・エス−アテス・コンポネンチ・エレツトロニシ・ソシエタ・ペル・アチオニ | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| SE7906202L (en) | 1980-01-21 |
| CA1114522A (en) | 1981-12-15 |
| DE2928685A1 (en) | 1980-01-31 |
| SE449538B (en) | 1987-05-04 |
| JPS6040192B2 (en) | 1985-09-10 |
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