SE7812503L - Solceller - Google Patents
SolcellerInfo
- Publication number
- SE7812503L SE7812503L SE7812503A SE7812503A SE7812503L SE 7812503 L SE7812503 L SE 7812503L SE 7812503 A SE7812503 A SE 7812503A SE 7812503 A SE7812503 A SE 7812503A SE 7812503 L SE7812503 L SE 7812503L
- Authority
- SE
- Sweden
- Prior art keywords
- solar cells
- solar cell
- amorphous silicon
- silicon solar
- schottky barrier
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000011195 cermet Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/153—Solar cells-implantations-laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/899,242 US4167015A (en) | 1978-04-24 | 1978-04-24 | Cermet layer for amorphous silicon solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7812503L true SE7812503L (sv) | 1979-10-25 |
Family
ID=25410655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7812503A SE7812503L (sv) | 1978-04-24 | 1978-12-05 | Solceller |
Country Status (13)
Country | Link |
---|---|
US (1) | US4167015A (sv) |
JP (1) | JPS54141593A (sv) |
AU (1) | AU525145B2 (sv) |
CA (1) | CA1116280A (sv) |
DE (2) | DE2858777C2 (sv) |
FR (1) | FR2424632A1 (sv) |
GB (1) | GB2019647B (sv) |
HK (1) | HK77886A (sv) |
IT (1) | IT1192596B (sv) |
MY (1) | MY8700212A (sv) |
NL (1) | NL7812518A (sv) |
SE (1) | SE7812503L (sv) |
SG (1) | SG37084G (sv) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4272641A (en) * | 1979-04-19 | 1981-06-09 | Rca Corporation | Tandem junction amorphous silicon solar cells |
IT1194594B (it) * | 1979-04-19 | 1988-09-22 | Rca Corp | Celle solari di silicio amorfo con giunzioni in tandem |
US4320248A (en) * | 1979-08-13 | 1982-03-16 | Shunpei Yamazaki | Semiconductor photoelectric conversion device |
FR2464564A1 (fr) * | 1979-08-28 | 1981-03-06 | Rca Corp | Batterie solaire au silicium amorphe |
JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS56114384A (en) * | 1980-02-13 | 1981-09-08 | Sanyo Electric Co Ltd | Solar battery |
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
DE3023165A1 (de) * | 1980-06-20 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem silizium |
JPS5898985A (ja) * | 1981-12-09 | 1983-06-13 | Seiko Epson Corp | 薄膜太陽電池 |
JPS58101469A (ja) * | 1981-12-11 | 1983-06-16 | Seiko Epson Corp | 薄膜太陽電池 |
JPS58201379A (ja) * | 1982-05-19 | 1983-11-24 | Matsushita Electric Ind Co Ltd | 光電変換素子 |
DE3219606A1 (de) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Schottky-leistungsdiode |
FR2536913B1 (fr) * | 1982-11-25 | 1986-04-04 | Saint Gobain Rech Sa | Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds |
JPS60224283A (ja) * | 1984-04-20 | 1985-11-08 | Sumitomo Special Metals Co Ltd | 薄膜電池用金属基板材 |
JPS62169372A (ja) * | 1987-01-09 | 1987-07-25 | Matsushita Electric Ind Co Ltd | 半導体素子の製造方法 |
US4933021A (en) * | 1988-11-14 | 1990-06-12 | Electric Power Research Institute | Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation |
US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
US4933022A (en) * | 1988-11-14 | 1990-06-12 | Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute | Solar cell having interdigitated contacts and internal bypass diodes |
FR2646560B1 (fr) * | 1989-04-27 | 1994-01-14 | Solems Sa | Procede pour ameliorer la reponse spectrale d'une structure photoconductrice, cellule solaire et structure photoreceptive ameliorees |
US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
US5230746A (en) * | 1992-03-03 | 1993-07-27 | Amoco Corporation | Photovoltaic device having enhanced rear reflecting contact |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6344608B2 (en) * | 1998-06-30 | 2002-02-05 | Canon Kabushiki Kaisha | Photovoltaic element |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6111189A (en) * | 1998-07-28 | 2000-08-29 | Bp Solarex | Photovoltaic module framing system with integral electrical raceways |
US8297883B2 (en) * | 2008-04-07 | 2012-10-30 | Viv Suppression, Inc. | Underwater device for ROV installable tools |
US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
US20130000689A1 (en) * | 2011-07-01 | 2013-01-03 | Miasolé | Photovoltaic module support assembly with standoff clamps |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
US8952246B2 (en) | 2012-04-02 | 2015-02-10 | Nusola, Inc. | Single-piece photovoltaic structure |
WO2014145339A1 (en) * | 2013-03-15 | 2014-09-18 | Nusola Inc. | Hybrid-transparent electrode assembly for photovoltaic cell manufacturing |
DE102013007644B4 (de) * | 2013-05-06 | 2017-09-21 | Hochschule Für Technik Und Wirtschaft Des Saarlandes | Anordnung zur Messung einer Dehnung, eines Druckes oder einer Kraft mit einer Widerstandsschicht |
US20180062011A1 (en) * | 2015-01-22 | 2018-03-01 | Solaero Technologies Corp. | Space solar cell panel with blocking diodes |
JP6673466B2 (ja) * | 2016-03-22 | 2020-03-25 | 株式会社村田製作所 | セラミック電子部品およびセラミック電子部品の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3843420A (en) * | 1972-10-24 | 1974-10-22 | Rca Corp | Sputtered granular ferromagnetic iron-nickel-silica films |
US3919589A (en) * | 1973-04-06 | 1975-11-11 | Rca Corp | Electroluminescent cell with a current-limiting layer of high resistivity |
US4010312A (en) * | 1975-01-23 | 1977-03-01 | Rca Corporation | High resistance cermet film and method of making the same |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
AU503228B2 (en) * | 1975-07-28 | 1979-08-30 | Rca Corp. | Semiconductor device |
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4126150A (en) * | 1977-03-28 | 1978-11-21 | Rca Corporation | Photovoltaic device having increased absorption efficiency |
US4177506A (en) * | 1978-05-22 | 1979-12-04 | Easterling Jimmy W | Illuminated bar for an advertising sign |
-
1978
- 1978-04-24 US US05/899,242 patent/US4167015A/en not_active Expired - Lifetime
- 1978-10-30 CA CA314,696A patent/CA1116280A/en not_active Expired
- 1978-12-05 SE SE7812503A patent/SE7812503L/sv not_active Application Discontinuation
- 1978-12-14 IT IT30853/78A patent/IT1192596B/it active
- 1978-12-18 AU AU42612/78A patent/AU525145B2/en not_active Expired
- 1978-12-18 FR FR7835503A patent/FR2424632A1/fr active Granted
- 1978-12-18 DE DE2858777A patent/DE2858777C2/de not_active Expired - Fee Related
- 1978-12-18 JP JP15736178A patent/JPS54141593A/ja active Granted
- 1978-12-18 DE DE19782854653 patent/DE2854653A1/de active Granted
- 1978-12-20 GB GB7849182A patent/GB2019647B/en not_active Expired
- 1978-12-22 NL NL7812518A patent/NL7812518A/xx not_active Application Discontinuation
-
1984
- 1984-05-14 SG SG370/84A patent/SG37084G/en unknown
-
1986
- 1986-10-16 HK HK778/86A patent/HK77886A/xx unknown
-
1987
- 1987-12-30 MY MY212/87A patent/MY8700212A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB2019647A (en) | 1979-10-31 |
AU4261278A (en) | 1979-11-01 |
JPS6228598B2 (sv) | 1987-06-22 |
CA1116280A (en) | 1982-01-12 |
GB2019647B (en) | 1982-05-12 |
FR2424632B1 (sv) | 1984-05-11 |
DE2854653C2 (sv) | 1991-09-19 |
AU525145B2 (en) | 1982-10-21 |
NL7812518A (nl) | 1979-10-26 |
JPS54141593A (en) | 1979-11-02 |
US4167015A (en) | 1979-09-04 |
HK77886A (en) | 1986-10-24 |
MY8700212A (en) | 1987-12-31 |
SG37084G (en) | 1985-03-08 |
DE2854653A1 (de) | 1979-10-31 |
IT7830853A0 (it) | 1978-12-14 |
IT1192596B (it) | 1988-04-20 |
DE2858777C2 (sv) | 1991-01-24 |
FR2424632A1 (fr) | 1979-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 7812503-6 |