FR2536913B1 - Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds - Google Patents

Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds

Info

Publication number
FR2536913B1
FR2536913B1 FR8219752A FR8219752A FR2536913B1 FR 2536913 B1 FR2536913 B1 FR 2536913B1 FR 8219752 A FR8219752 A FR 8219752A FR 8219752 A FR8219752 A FR 8219752A FR 2536913 B1 FR2536913 B1 FR 2536913B1
Authority
FR
France
Prior art keywords
improvement
photovoltaic cells
polycrystalline layer
layer photovoltaic
based polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8219752A
Other languages
English (en)
Other versions
FR2536913A1 (fr
Inventor
Olivier Maris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Recherche SA
Original Assignee
Saint Gobain Recherche SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Recherche SA filed Critical Saint Gobain Recherche SA
Priority to FR8219752A priority Critical patent/FR2536913B1/fr
Publication of FR2536913A1 publication Critical patent/FR2536913A1/fr
Application granted granted Critical
Publication of FR2536913B1 publication Critical patent/FR2536913B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR8219752A 1982-11-25 1982-11-25 Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds Expired FR2536913B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8219752A FR2536913B1 (fr) 1982-11-25 1982-11-25 Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8219752A FR2536913B1 (fr) 1982-11-25 1982-11-25 Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds

Publications (2)

Publication Number Publication Date
FR2536913A1 FR2536913A1 (fr) 1984-06-01
FR2536913B1 true FR2536913B1 (fr) 1986-04-04

Family

ID=9279509

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8219752A Expired FR2536913B1 (fr) 1982-11-25 1982-11-25 Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds

Country Status (1)

Country Link
FR (1) FR2536913B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542116A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Photovoltaische zelle

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104420A (en) * 1975-08-25 1978-08-01 Photon Power, Inc. Photovoltaic cell
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
CA1121897A (fr) * 1978-09-22 1982-04-13 Allen M. Barnett Piles photovoltaiques en pellicule mince
US4239553A (en) * 1979-05-29 1980-12-16 University Of Delaware Thin film photovoltaic cells having increased durability and operating life and method for making same
US4267398A (en) * 1979-05-29 1981-05-12 University Of Delaware Thin film photovoltaic cells
US4283591A (en) * 1980-05-22 1981-08-11 Ses, Incorporated Photovoltaic cell

Also Published As

Publication number Publication date
FR2536913A1 (fr) 1984-06-01

Similar Documents

Publication Publication Date Title
EP0535522A3 (en) Method to produce pn cdte/cds thin film solar cells
ZA83537B (en) Improved solar cell and method for producing same
GB8416965D0 (en) Fabricating solar cells
GB2019647B (en) Cermet layer for amorphous silicon solar cells
AU3345084A (en) Power conversion device for solar cell
EP0118797A3 (en) Solar cell
JPS5787181A (en) Silicon layer solar battery
JPS5662378A (en) Semiconductor layer solar battery and method of manufacturing same
KR950700611A (ko) 황화카드뮴 박층을 갖는 광전지(Photovoltaic cell with thin CdS layer)
GB8423558D0 (en) Semi-conductor solar cells
EP0111750A3 (en) Amorphous silicium solar cell and method of manufacturing the same
GB2085657B (en) Photovoltaic solar cells
DE3479272D1 (en) Amorphous silicon solar cells
AU2612084A (en) Preventing short circuits in a solar cell
GB2137810B (en) A solar cell of amorphous silicon
FR2536913B1 (fr) Perfectionnement aux cellules photovoltaiques a couche polycristalline a base de cds
AU1212583A (en) Cadmium sulphide solar cell
AU593692B2 (en) Method of depositing a cds layer for a solar cell
DE3279347D1 (en) Process for making polycrystalline silicon films for solar cells
GB2160360B (en) Method of fabricating solar cells
GB2121022B (en) A selectively absorbent layer for solar collectors, and a method for its manufacture
JPS56122171A (en) Photovoltaic cell utilized for manufacturing solar battery
GB2162998B (en) Method of fabricating solar cells
GB2162996B (en) Method of fabricating solar cells
BR7807220A (pt) Silicio policristalino em camada fina para convercao fotovoltaica

Legal Events

Date Code Title Description
ST Notification of lapse