SE7809865L - Lesminnesmatris med felteffekttransistorer - Google Patents
Lesminnesmatris med felteffekttransistorerInfo
- Publication number
- SE7809865L SE7809865L SE7809865A SE7809865A SE7809865L SE 7809865 L SE7809865 L SE 7809865L SE 7809865 A SE7809865 A SE 7809865A SE 7809865 A SE7809865 A SE 7809865A SE 7809865 L SE7809865 L SE 7809865L
- Authority
- SE
- Sweden
- Prior art keywords
- power transistors
- field power
- read memory
- memory matrix
- matrix
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/847,353 US4151603A (en) | 1977-10-31 | 1977-10-31 | Precharged FET ROS array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE7809865L true SE7809865L (sv) | 1979-05-01 |
Family
ID=25300408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7809865A SE7809865L (sv) | 1977-10-31 | 1978-09-20 | Lesminnesmatris med felteffekttransistorer |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4151603A (xx) |
| JP (1) | JPS5467727A (xx) |
| DE (1) | DE2842690A1 (xx) |
| FR (1) | FR2410337A1 (xx) |
| GB (1) | GB1600878A (xx) |
| IT (1) | IT1159144B (xx) |
| NL (1) | NL7810256A (xx) |
| SE (1) | SE7809865L (xx) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5613584A (en) * | 1979-07-11 | 1981-02-09 | Hitachi Ltd | Setting circuit for data line potential |
| JPS5847796B2 (ja) * | 1979-05-26 | 1983-10-25 | 富士通株式会社 | 半導体メモリ装置 |
| WO1982002977A1 (en) * | 1981-02-25 | 1982-09-02 | Inc Motorola | Memory cell having more than two voltage levels |
| JPS57167197A (en) * | 1981-04-07 | 1982-10-14 | Nec Corp | Memory circuit |
| FR2548429B1 (fr) * | 1983-06-28 | 1988-12-30 | Efcis | Memoire permanente organisee en deux demi-plans pour ameliorer la vitesse de lecture |
| US4725986A (en) * | 1983-09-20 | 1988-02-16 | International Business Machines Corporation | FET read only memory cell with word line augmented precharging of the bit lines |
| JPH0666114B2 (ja) * | 1984-09-21 | 1994-08-24 | 株式会社日立製作所 | 半導体集積回路 |
| JPS63302495A (ja) * | 1987-04-03 | 1988-12-09 | Toshiba Corp | 半導体メモリ装置 |
| JPH02143147U (xx) * | 1989-05-08 | 1990-12-05 | ||
| US5233637A (en) * | 1991-11-01 | 1993-08-03 | Hewlett-Packard Company | System for generating an analog regulating voltage |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3866186A (en) * | 1972-05-16 | 1975-02-11 | Tokyo Shibaura Electric Co | Logic circuit arrangement employing insulated gate field effect transistors |
| US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
| GB1456608A (en) * | 1973-08-23 | 1976-11-24 | Ibm | Read only memory |
| US4057787A (en) * | 1975-01-09 | 1977-11-08 | International Business Machines Corporation | Read only memory |
| JPS51111020A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Semiconductor fixing memory equipment |
| US4093942A (en) * | 1975-06-05 | 1978-06-06 | Tokyo Shibaura Electric Co., Ltd. | Matrix circuits |
| US3969708A (en) * | 1975-06-30 | 1976-07-13 | International Business Machines Corporation | Static four device memory cell |
| US4031524A (en) * | 1975-10-17 | 1977-06-21 | Teletype Corporation | Read-only memories, and readout circuits therefor |
-
1977
- 1977-10-31 US US05/847,353 patent/US4151603A/en not_active Expired - Lifetime
-
1978
- 1978-05-19 GB GB20855/78A patent/GB1600878A/en not_active Expired
- 1978-09-07 JP JP10919978A patent/JPS5467727A/ja active Granted
- 1978-09-20 SE SE7809865A patent/SE7809865L/xx unknown
- 1978-09-26 FR FR7828296A patent/FR2410337A1/fr active Granted
- 1978-09-29 IT IT28240/78A patent/IT1159144B/it active
- 1978-09-30 DE DE19782842690 patent/DE2842690A1/de active Granted
- 1978-10-12 NL NL7810256A patent/NL7810256A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| IT7828240A0 (it) | 1978-09-29 |
| DE2842690A1 (de) | 1979-05-10 |
| JPS5723957B2 (xx) | 1982-05-21 |
| NL7810256A (nl) | 1979-05-02 |
| US4151603A (en) | 1979-04-24 |
| IT1159144B (it) | 1987-02-25 |
| DE2842690C2 (xx) | 1988-09-15 |
| FR2410337A1 (fr) | 1979-06-22 |
| GB1600878A (en) | 1981-10-21 |
| FR2410337B1 (xx) | 1980-10-31 |
| JPS5467727A (en) | 1979-05-31 |
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