JPS5461883A - Field effect storage transistor and memory matrix - Google Patents

Field effect storage transistor and memory matrix

Info

Publication number
JPS5461883A
JPS5461883A JP11373078A JP11373078A JPS5461883A JP S5461883 A JPS5461883 A JP S5461883A JP 11373078 A JP11373078 A JP 11373078A JP 11373078 A JP11373078 A JP 11373078A JP S5461883 A JPS5461883 A JP S5461883A
Authority
JP
Japan
Prior art keywords
field effect
memory matrix
storage transistor
effect storage
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11373078A
Other languages
Japanese (ja)
Inventor
Guentaa Adamu Furitsutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5461883A publication Critical patent/JPS5461883A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP11373078A 1977-10-14 1978-09-18 Field effect storage transistor and memory matrix Pending JPS5461883A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772746234 DE2746234A1 (en) 1977-10-14 1977-10-14 FIELD EFFECT STORAGE TRANSISTOR AND STORAGE MATRIX

Publications (1)

Publication Number Publication Date
JPS5461883A true JPS5461883A (en) 1979-05-18

Family

ID=6021451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11373078A Pending JPS5461883A (en) 1977-10-14 1978-09-18 Field effect storage transistor and memory matrix

Country Status (3)

Country Link
JP (1) JPS5461883A (en)
DE (1) DE2746234A1 (en)
FR (1) FR2406308A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
US5348898A (en) * 1979-05-25 1994-09-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JPS5656677A (en) * 1979-10-13 1981-05-18 Toshiba Corp Semiconductor memory device
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
FR2880982A1 (en) 2005-01-19 2006-07-21 St Microelectronics Sa Complementary MOS read only memory for storing information, has memory cells with storage transistors having gate in shape of window whose inner and outer borders delimit respectively central drain region and source regions in substrate

Also Published As

Publication number Publication date
DE2746234A1 (en) 1979-04-19
FR2406308A1 (en) 1979-05-11

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