SE7502640L - - Google Patents

Info

Publication number
SE7502640L
SE7502640L SE7502640A SE7502640A SE7502640L SE 7502640 L SE7502640 L SE 7502640L SE 7502640 A SE7502640 A SE 7502640A SE 7502640 A SE7502640 A SE 7502640A SE 7502640 L SE7502640 L SE 7502640L
Authority
SE
Sweden
Prior art keywords
circuit network
pnpn
switch
active circuit
semiconductor
Prior art date
Application number
SE7502640A
Other languages
Unknown language ( )
English (en)
Other versions
SE399163B (sv
Inventor
M Tokunaga
I Ohhinata
S Okuhara
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2711574A external-priority patent/JPS5346588B2/ja
Priority claimed from JP8218574A external-priority patent/JPS5111557A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SE7502640L publication Critical patent/SE7502640L/
Publication of SE399163B publication Critical patent/SE399163B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
SE7502640A 1974-03-11 1975-03-10 Halvledaromkopplare SE399163B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2711574A JPS5346588B2 (xx) 1974-03-11 1974-03-11
JP8218574A JPS5111557A (ja) 1974-07-19 1974-07-19 Handotaisuitsuchi

Publications (2)

Publication Number Publication Date
SE7502640L true SE7502640L (xx) 1975-09-12
SE399163B SE399163B (sv) 1978-01-30

Family

ID=26365004

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7502640A SE399163B (sv) 1974-03-11 1975-03-10 Halvledaromkopplare

Country Status (8)

Country Link
US (1) US4015143A (xx)
CA (1) CA1032220A (xx)
DE (1) DE2510406C3 (xx)
GB (1) GB1503939A (xx)
HK (1) HK18081A (xx)
MY (1) MY8100379A (xx)
NL (1) NL176730C (xx)
SE (1) SE399163B (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131449A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Semiconductor switch circuit
US4891683A (en) * 1977-05-02 1990-01-02 Advanced Micro Devices, Inc. Integrated SCR current sourcing sinking device
US4130889A (en) * 1977-05-02 1978-12-19 Monolithic Memories, Inc. Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices
JPS5418664A (en) * 1977-07-13 1979-02-10 Hitachi Ltd Semiconductor switch
JPS5846860B2 (ja) * 1977-12-23 1983-10-19 株式会社日立製作所 半導体クロスポイントスイツチ
US4302687A (en) * 1978-04-20 1981-11-24 Nippon Electric Co., Ltd. Semiconductor switch
US4396932A (en) * 1978-06-16 1983-08-02 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
JPS5549034A (en) * 1978-10-04 1980-04-08 Hitachi Ltd Semiconductor switch
US4268846A (en) * 1978-12-22 1981-05-19 Eaton Corporation Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion
US4398205A (en) * 1978-12-22 1983-08-09 Eaton Corporation Gate turn-off device with high turn-off gain
US4355322A (en) * 1978-12-22 1982-10-19 Spellman Gordon B Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor
JPS55110068A (en) * 1979-02-16 1980-08-25 Fujitsu Ltd Thyristor
JPS5617067A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor switch
EP0027888B1 (en) * 1979-09-21 1986-04-16 Hitachi, Ltd. Semiconductor switch
US4458408A (en) * 1981-07-31 1984-07-10 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch
US4572968A (en) * 1983-03-04 1986-02-25 Motorola, Inc. SCR Fire sensitivity control and fire control apparatus
US4553041A (en) * 1983-08-22 1985-11-12 Motorola, Inc. Monolithic zero crossing triac driver
DE3583897D1 (de) 1984-06-22 1991-10-02 Hitachi Ltd Halbleiterschalter.
US5686857A (en) * 1996-02-06 1997-11-11 Motorola, Inc. Zero-crossing triac and method
US5703520A (en) * 1996-04-01 1997-12-30 Delco Electronics Corporation Integrated inductive load snubbing device using a multi-collector transistor
US6034561A (en) * 1997-06-09 2000-03-07 Delco Electronics Corporation Integrated inductive load snubbing device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517280A (en) * 1967-10-17 1970-06-23 Ibm Four layer diode device insensitive to rate effect and method of manufacture
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
US3812405A (en) * 1973-01-29 1974-05-21 Motorola Inc Stable thyristor device

Also Published As

Publication number Publication date
GB1503939A (en) 1978-03-15
DE2510406C3 (de) 1979-06-13
CA1032220A (en) 1978-05-30
NL176730C (nl) 1985-05-17
NL7502825A (nl) 1975-09-15
MY8100379A (en) 1981-12-31
DE2510406A1 (de) 1975-09-25
US4015143A (en) 1977-03-29
NL176730B (nl) 1984-12-17
DE2510406B2 (de) 1978-10-19
SE399163B (sv) 1978-01-30
HK18081A (en) 1981-05-15

Similar Documents

Publication Publication Date Title
SE7502640L (xx)
US2993154A (en) Semiconductor switch
KR930703706A (ko) 통합형 전력 스위치 구조체
GB1057823A (en) Improvements in semiconductor switch
KR890015426A (ko) Mos제어 다이리스터(mct)
GB917645A (en) Improvements in or relating to semiconductor devices
GB990682A (en) Bistable trigger circuit
SE8103222L (sv) Halvledaranordning av hogspenningstyp
GB1475320A (en) Semiconductor devices
KR930702790A (ko) 고속 턴오프(Turn-Off) 다이리스터(Thyristor)구조
Baliga et al. Gate turn-off capability of depletion-mode thyristors
JPS5783830A (en) Controller using gate turn-off thyristor
FR2279269A1 (fr) Interrupteur a semi-conducteur
JPS57173974A (en) Semiconductor device
JPS5549035A (en) Semiconductor switch circuit
JPS5446488A (en) Thyristor
JPS54133062A (en) Drive circuit for semiconductor switch
JPS5272188A (en) Gate turn-off thyristor
GB1057916A (en) Switching circuits employing surface potential controlled semiconductor devices
JPS61285821A (ja) 電子スイツチ
Amos et al. Principles of transistor circuits
Zhang et al. A new MOS gate thyristor—The single-gate emitter controlled thyristor (SECT)
SU970587A2 (ru) Устройство дл управлени электронно-лучевым вентилем
GB1516537A (en) Switching circuit
JPS56112873A (en) Gate circuit of gate turn-off thyristor

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7502640-1

Effective date: 19911009

Format of ref document f/p: F