SE455743B - Forfarande for framstellning av ett monstrat resistskikt medelst plasmaetsning, varvid en skyddande polymerfilm bildas pa nemnda resistskikt under etsningssteget - Google Patents
Forfarande for framstellning av ett monstrat resistskikt medelst plasmaetsning, varvid en skyddande polymerfilm bildas pa nemnda resistskikt under etsningsstegetInfo
- Publication number
- SE455743B SE455743B SE8105859A SE8105859A SE455743B SE 455743 B SE455743 B SE 455743B SE 8105859 A SE8105859 A SE 8105859A SE 8105859 A SE8105859 A SE 8105859A SE 455743 B SE455743 B SE 455743B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- chamber
- etching step
- patterned
- etching
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 25
- 229920006254 polymer film Polymers 0.000 title claims description 8
- 230000001681 protective effect Effects 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 60
- 238000005530 etching Methods 0.000 claims description 42
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000012044 organic layer Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 6
- 238000001312 dry etching Methods 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 6
- 238000000889 atomisation Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 101100063818 Caenorhabditis elegans lig-1 gene Proteins 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 101100224228 Mus musculus Lig1 gene Proteins 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920013730 reactive polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/199,023 US4333793A (en) | 1980-10-20 | 1980-10-20 | High-selectivity plasma-assisted etching of resist-masked layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8105859L SE8105859L (sv) | 1982-04-21 |
| SE455743B true SE455743B (sv) | 1988-08-01 |
Family
ID=22735887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8105859A SE455743B (sv) | 1980-10-20 | 1981-10-05 | Forfarande for framstellning av ett monstrat resistskikt medelst plasmaetsning, varvid en skyddande polymerfilm bildas pa nemnda resistskikt under etsningssteget |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US4333793A (es) |
| JP (1) | JPS5799745A (es) |
| BE (1) | BE890772A (es) |
| CA (1) | CA1160759A (es) |
| DE (1) | DE3140890C2 (es) |
| ES (1) | ES506354A0 (es) |
| FR (1) | FR2492591A1 (es) |
| GB (1) | GB2085809B (es) |
| HK (1) | HK6786A (es) |
| IE (1) | IE52530B1 (es) |
| IT (1) | IT1139988B (es) |
| NL (1) | NL191587C (es) |
| SE (1) | SE455743B (es) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0050973B1 (en) * | 1980-10-28 | 1986-01-22 | Kabushiki Kaisha Toshiba | Masking process for semiconductor devices using a polymer film |
| US4397724A (en) * | 1981-08-24 | 1983-08-09 | Bell Telephone Laboratories, Incorporated | Apparatus and method for plasma-assisted etching of wafers |
| US4375385A (en) * | 1982-03-25 | 1983-03-01 | Rca Corporation | Plasma etching of aluminum |
| US4372807A (en) * | 1982-03-25 | 1983-02-08 | Rca Corporation | Plasma etching of aluminum |
| JPS58204537A (ja) * | 1982-05-24 | 1983-11-29 | Hitachi Ltd | プラズマエツチング方法 |
| US4422897A (en) * | 1982-05-25 | 1983-12-27 | Massachusetts Institute Of Technology | Process for selectively etching silicon |
| US4451349A (en) * | 1983-04-20 | 1984-05-29 | International Business Machines Corporation | Electrode treatment for plasma patterning of polymers |
| JPH0622212B2 (ja) * | 1983-05-31 | 1994-03-23 | 株式会社東芝 | ドライエッチング方法 |
| US4452665A (en) * | 1983-10-12 | 1984-06-05 | International Business Machines Corporation | Polymeric halocarbons as plasma etch barriers |
| US4470871A (en) * | 1983-12-27 | 1984-09-11 | Rca Corporation | Preparation of organic layers for oxygen etching |
| US4534826A (en) * | 1983-12-29 | 1985-08-13 | Ibm Corporation | Trench etch process for dielectric isolation |
| US4601913A (en) * | 1984-06-27 | 1986-07-22 | International Business Machines Corporation | Underlay surface modification to control resin glass polymerization |
| US4528066A (en) * | 1984-07-06 | 1985-07-09 | Ibm Corporation | Selective anisotropic reactive ion etching process for polysilicide composite structures |
| US4613400A (en) * | 1985-05-20 | 1986-09-23 | Applied Materials, Inc. | In-situ photoresist capping process for plasma etching |
| DE3615519A1 (de) * | 1986-05-07 | 1987-11-12 | Siemens Ag | Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten |
| US5332653A (en) * | 1992-07-01 | 1994-07-26 | Motorola, Inc. | Process for forming a conductive region without photoresist-related reflective notching damage |
| US5562801A (en) * | 1994-04-28 | 1996-10-08 | Cypress Semiconductor Corporation | Method of etching an oxide layer |
| JP3073906B2 (ja) * | 1995-03-27 | 2000-08-07 | 財団法人国際超電導産業技術研究センター | 超電導デバイスの製造方法 |
| KR100327346B1 (ko) * | 1999-07-20 | 2002-03-06 | 윤종용 | 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법 |
| US6699792B1 (en) * | 2001-07-17 | 2004-03-02 | Advanced Micro Devices, Inc. | Polymer spacers for creating small geometry space and method of manufacture thereof |
| CN100451831C (zh) * | 2001-10-29 | 2009-01-14 | 旺宏电子股份有限公司 | 减小图案间隙或开口尺寸的方法 |
| US6573177B1 (en) * | 2002-02-19 | 2003-06-03 | Macronix International Co., Ltd. | Protection layer to prevent under-layer damage during deposition |
| US9159561B2 (en) * | 2013-12-26 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3692655A (en) * | 1971-04-05 | 1972-09-19 | Rca Corp | Method of radiofrequency sputter etching |
| US3816196A (en) * | 1971-06-07 | 1974-06-11 | Gen Electric | Passivation of photoresist materials used in selective plasma etching |
| GB1417085A (en) * | 1973-05-17 | 1975-12-10 | Standard Telephones Cables Ltd | Plasma etching |
| EP0001538B1 (fr) * | 1977-10-06 | 1983-01-12 | International Business Machines Corporation | Procédé de décapage sélectif par ions réactifs d'un élément |
| JPS5454578A (en) * | 1977-10-11 | 1979-04-28 | Fujitsu Ltd | Gas plasma etching method |
| JPS5470772A (en) * | 1977-11-16 | 1979-06-06 | Cho Lsi Gijutsu Kenkyu Kumiai | Dry etching method |
| US4226896A (en) * | 1977-12-23 | 1980-10-07 | International Business Machines Corporation | Plasma method for forming a metal containing polymer |
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
| US4275286A (en) * | 1978-12-04 | 1981-06-23 | Hughes Aircraft Company | Process and mask for ion beam etching of fine patterns |
-
1980
- 1980-10-20 US US06/199,023 patent/US4333793A/en not_active Expired - Lifetime
-
1981
- 1981-09-30 CA CA000387027A patent/CA1160759A/en not_active Expired
- 1981-10-05 SE SE8105859A patent/SE455743B/sv not_active IP Right Cessation
- 1981-10-13 FR FR8119237A patent/FR2492591A1/fr active Granted
- 1981-10-15 GB GB8131070A patent/GB2085809B/en not_active Expired
- 1981-10-15 DE DE3140890A patent/DE3140890C2/de not_active Expired - Fee Related
- 1981-10-19 BE BE0/206272A patent/BE890772A/fr not_active IP Right Cessation
- 1981-10-19 IT IT24559/81A patent/IT1139988B/it active
- 1981-10-19 ES ES506354A patent/ES506354A0/es active Granted
- 1981-10-19 IE IE2455/81A patent/IE52530B1/en not_active IP Right Cessation
- 1981-10-19 NL NL8104741A patent/NL191587C/xx not_active IP Right Cessation
- 1981-10-20 JP JP56166512A patent/JPS5799745A/ja active Pending
-
1986
- 1986-01-30 HK HK67/86A patent/HK6786A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK6786A (en) | 1986-02-07 |
| IT1139988B (it) | 1986-09-24 |
| BE890772A (fr) | 1982-02-15 |
| IE52530B1 (en) | 1987-12-09 |
| DE3140890C2 (de) | 1997-08-21 |
| US4333793A (en) | 1982-06-08 |
| CA1160759A (en) | 1984-01-17 |
| GB2085809B (en) | 1984-06-20 |
| FR2492591A1 (fr) | 1982-04-23 |
| SE8105859L (sv) | 1982-04-21 |
| ES8207386A1 (es) | 1982-09-01 |
| FR2492591B1 (es) | 1984-12-21 |
| JPS5799745A (en) | 1982-06-21 |
| NL8104741A (nl) | 1982-05-17 |
| ES506354A0 (es) | 1982-09-01 |
| NL191587C (nl) | 1995-10-03 |
| GB2085809A (en) | 1982-05-06 |
| NL191587B (nl) | 1995-06-01 |
| IT8124559A0 (it) | 1981-10-19 |
| IE812455L (en) | 1982-04-20 |
| DE3140890A1 (de) | 1982-06-16 |
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